LESHAN RADIO COMPANY, LTD. 2-Input AND Gate with L74VHC1G09 Open Drain Output The L74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. This allows the LMC74VHC1G09 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply. The L74VHC1G09 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. • High Speed: t PD = 4.3 ns (Typ) at V CC = 5 V • Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 62; Equivalent Gates = 16 MARKING DIAGRAMS 5 4 1 2 VXd 3 SC–88A/SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 Figure 1. Pinout (Top View) 4 VXd 1 2 Figure 2. Logic Symbol 3 TSOP–5/SOT–23/SC–59 DT SUFFIX Pin 1 d = Date Code FUNCTION TABLE Inputs PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H B L H L H Output Y L L L Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 MAXIMUM RATINGS Symbol V CC V IN V OUT I IK I OK I OUT I CC PD θ JA TL TJ T stg V ESD Parameter DC Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current V OUT < GND; V OUT > V CC DC Output Current, per Pin DC Supply Current, V CC and GND Power dissipation in still air SC–88A, TSOP–5 Thermal resistance SC–88A, TSOP–5 Lead Temperature, 1 mm from Case for 10 s Junction Temperature Under Bias Storage temperature ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Value – 0.5 to + 7.0 – 0.5 to +7.0 – 0.5 to +7.0 –20 +20 + 25 +50 200 333 260 + 150 –65 to +150 >2000 > 200 N/A Unit V V V mA mA mA mA mW °C/W °C °C °C V I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Min 2.0 0.0 0.0 – 55 0 0 V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V Max 5.5 5.5 7.0 + 125 100 20 Unit V V V °C ns/V DEVICE JUNCTION TEMPERATURE VERSUS Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature 2/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High–Level Test Conditions Input Voltage V IL Maximum Low–Level Input Voltage V OH V OL Min 1.5 Max Min 1.5 Max Min 1.5 3.0 4.5 2.1 3.15 2.1 3.15 2.1 3.15 5.5 2.0 3.85 3.85 3.85 V 0.5 0.5 0.9 1.35 0.9 1.35 2.0 1.9 1.9 3.0 4.5 2.9 4.4 3.0 4.0 2.9 4.4 2.9 4.4 V IN = V IH or V IL I OH = –4 mA 3.0 2.58 2.48 2.34 I OH = –8 mA V IN = V IH or V IL 4.5 2.0 3.94 3.80 I OL = 50 µA 3.0 4.5 I OH = – 50 µA Unit V 0.9 1.35 1.9 Output Voltage V IN = V IH or V IL Max 0.5 5.5 2.0 V IN = V IH or V IL Output Voltage V IN = V IH or V IL Typ T A < 85°C –55°C<TA<125°C (V) 2.0 3.0 4.5 Minimum High–Level Maximum Low–Level T A = 25°C CC 1.65 1.65 1.65 V 3.66 0.0 0.1 0.1 0.1 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 V V IN = V IH or V IL I OL = 4 mA 3.0 0.36 0.44 0.52 4.5 0 to5.5 0.36 ±0.1 0.44 ±1.0 0.52 ±1.0 µA 5.5 2.0 20 40 µA 0 0.25 2.5 5.0 µA I IN Maximum Input I OL = 8 mA V IN = 5.5 V or GND I CC Leakage Current Maximum Quiescent V IN = V CC or GND Supply Current I OPD Maximum Off–state Leakage Current V OUT = 5.5 V AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns T A = 25°C Symbol t PZL t PLZ C IN C PD Parameter Maximum Output Enable Time, Input A or B to Y Maximum Output Disable Time Typ T A < 85°C –55°C to 125°C Max Min Max Min Max Unit V CC = 3.3 ± 0.3 V C L = 15 pF R L = R I = 500 Ω C L = 50 pF 6.2 8.7 8.8 12.3 10.5 14.0 12.5 16.5 V CC = 5.0 ± 0.5 V C L = 15 pF R L = R I = 500 Ω C L = 50 pF V CC = 3.3 ± 0.3 V C L = 50 pF R L = R I = 500 Ω V CC = 5.0 ± 0.5 V C L = 50 pF R L = R I = 500 Ω 4.3 5.8 8.7 5.9 7.9 12.3 7.0 9.0 14.0 9.0 11.0 16.5 5.8 7.9 9.0 11.0 6.0 10 10 10 Typical @ 25°C, V CC = 5.0 V 18 pF Test Conditions Maximum Input Capacitance Power Dissipation Capacitance (Note 6) Min ns ns pF 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD x V CCx f in + I CC . C PD is used to determine the no– load dynamic power consumption; P D = C PD x V CC 2 x f in + I CCx V CC . 3/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 Y Figure 5. Switching Waveforms Figure 4. Output Voltage Mismatch Application C L = 50 pF equivalent (Includes jig and probe capacitance) R L = R 1 = 500 Ω or equivalent R T = Z OUT of pulse generator (typically 50 Ω) Figure 6. Test Circuit Figure 8. LED Driver Figure 7. Complex Boolean Functions Figure 9. GTL Driver DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Logic Circuit Temp Range Indicator Identifier Technology Device Function Package Type Package Tape and (Name/SOT#/ Suffix Reel Suffix Common Name) L74VHC1G09DFT1 L 74 VHC1G 09 DF T1 L74VHC1G09DFT2 L 74 VHC1G 09 DF T2 L74VHC1G09DFT4 L 74 VHC1G 09 DF T4 L74VHC1G09DTT1 L 74 VHC1G 09 DT T1 L74VHC1G09DTT3 L 74 VHC1G 09 DT T3 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 SOT–23/TSOPS/ SC–59 Tape and Reel Size 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 4/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 PACKAGE DIMENSIONS SC70−5/SC−88A/SOT−353 DF SUFFIX A G 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 DIM A B C D G H J K N S −B− S 1 2 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches 5/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 PACKAGE DIMENSIONS SOT23−5/TSOP−5/SC59−5 DT SUFFIX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D S 5 4 1 2 3 B L G DIM A B C D G H J K L M S A J C 0.05 (0.002) H M K MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm inches 6/6