FC8V33030L FC8V33030L Dual N-channel MOSFET Unit: mm For DC-DC Converter Features y Low drain-source ON resistance:RDS(on)typ. = 22 mΩ (VGS = 4.5 V) y High-speed switching :Qg = 3.8 nC y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol:6A 1. Source(FET1) 2. Gate(FET1) 3. Source(FET2) 4. Gate(FET2) Basic Part Number Dual Nch MOS 33 V (Individual) 5. Drain(FET2) 6. Drain(FET2) 7. Drain(FET1) 8. Drain(FET1) Packaging Panasonic JEITA Code FC8V33030L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source Voltage Gate-source Voltage Drain Current (Steady State) *1 FET1 Drain Current (t=10s) *1 FET2 Drain Current (Pulsed) *1,2 Source Current (Pulsed) (Body Diode) *1,2 Power Dissipation (Steady State) Power Dissipation (t=10s) *1 Overall Channel Temperature Storage Temperature Range WMini8-F1 SC-115 ― Internal Connection Symbol Rating Unit VDS VGS 33 ±20 6.5 8 26 V V ID IDp ISp (BD) *1 PD Tch Tstg Note: *1 Device mounted on a glass-epoxy board (See Figure 1) *2 Pulse test: Ensure that the channel temperature does not exceed 150 °C. 8 2 7 FET2 A 6.5 1 1.5 150 -55 to +150 FET1 1 W °C °C 3 6 4 5 Pin name 1. Source(FET1) 2. Gate(FET1) 3. Source(FET2) 4. Gate(FET2) 5. Drain(FET2) 6. Drain(FET2) 7. Drain(FET1) 8. Drain(FET1) FR-4 (Unit: mm) 25.4 x 25.4 x 0.8 (Figure 1) Glass-Epoxy Board Publication date: October 2012 Ver. BED 1 FC8V33030L Electrical Characteristics Ta = 25 °C ± 3 °C Static Characteristics Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance *1 VDSS IDSS IGSS Vth RDS(on)1 RDS(on)2 Conditions ID = 1 mA, VGS = 0 V VDS = 33 V, VGS = 0 V VGS = ±16 V, VDS = 0 V ID = 0.48 mA, VDS = 10 V ID = 3.3 A, VGS = 10 V ID = 3.3 A, VGS = 4.5 V Min. Typ. Max. 33 1 15 22 10 ±10 2.5 20 35 Unit V μA μA V mΩ Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-source Charge Gate-drain Charge Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD = 15 V, VGS = 0 to 10 V ID = 3.3 A (Figure 2) VDD = 15 V, VGS = 10 to 0 V ID = 3.3 A (Figure 2) VSD IS = 3.3 A, VGS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 15 V, VGS = 0 to 4.5 V, ID = 6.5 A 360 70 50 8 3 24 9 3.8 1.4 1.6 pF ns nC Body Diode Characteristic Diode Forward Voltage *1 0.8 1.2 V Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C Ver. BED 2 FC8V33030L VDD = 15 V ID =3.3A Vin Vout 10V PW = 10 μs D.C. ≤ 1 % 0V D Vin G 50 Ω S 90 % Vin 10 % 90 % 90 % Vout 10 % td(on) tr 10 % td(off) tf (Figure 2) Measuremet circuit for Turn-On Delay Time/Rise Time/Turn-Off Delay Time/Fall Time Ver. BED 3 FC8V33030L 3 6 VGS = 10.0 V Drain Current ID (A) Drain Current ID (A) 4.0 V 5 4.5 V 4 3.5 V 3 2 3.0 V 1 Ta = 85 °C 2 25 °C 1 -30 °C 0 0 0 0.1 0.2 0 0.3 Drain-source Voltage VDS (V) 1 2 ID - VDS 4 ID - VGS 100 0.25 Drain-source On-state Resistance RDS(on) (mΩ) 0.3 Drain-source Voltage VDS (V) 3 Gate-source Voltage VGS (V) ID = 3.3 A 0.2 0.15 1.65 A 0.1 0.05 0.83 A VGS = 4.5 V 10.0 V 10 1 0 0 2 4 6 8 1 10 10 Drain Current ID (A) Gate-source Voltage VGS (V) VDS - VGS RDS(on) - ID 10000 Gate-source Voltage VGS (V) Capacitance C (pF) 5 1000 Ciss 100 Coss Crss 4 VDD = 15 V 3 2 1 0 10 0.1 1 10 0 100 1 2 3 4 5 Total Gate Charge Qg (nC) Drain-source Voltage VDS (V) Capacitance - VDS Dynamic Input/Output Characteristics Ver. BED 4 50 4 Drain-source On-state Resistance RDS(on) (mΩ) Gate-source Threshold Voltage Vth (V) FC8V33030L 3 2 1 0 45 VGS = 4.5 V 40 35 30 25 10.0 V 20 15 10 5 0 -50 0 50 100 150 -50 0 Temperature Ta (°C) 50 100 150 200 Temperature Ta (°C) Vth - Ta RDS(on) - Ta Total Power Dissipation PD (W) 2 1.5 Device mounted on a glass-epoxy board (25.4 x 25.4 x 0.8 mm) 1 0.5 0 0 50 100 150 Temperature Ta (°C) PD - Ta 100 IDp = 26 A 100 Drain Current ID (A) Thermal Resistance Rth (°C/W) 1000 10 1 10 1 Operation in this area is limited by RDS(on) 1 ms 10 ms 0.1 100 ms 1s Ta = 25 °C, Glass epoxy board (25.4 × 25.4 × t0.8 mm) 0.1 0.01 DC 2 coated with copper foil,which has more than 300 mm . 0.1 1 10 100 1000 0.01 0.01 0.1 1 10 100 Drain-source Voltage VDS (V) Pulse Width tsw (s) Rth -tsw Safe Operating Area Ver. BED 5 FC8V33030L WMini8-F1 Unit: mm Land Pattern (Reference) (Unit: mm) Ver. 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