MBRAF440, NRVBAF440 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIER 4.0 AMPERE 40 VOLTS SMA−FL CASE 403AA STYLE 6 Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements AYWW RAFG G RAF = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF440T3G SMA−FL (Pb−Free) 5000 / Tape & Reel NRVBAF440T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 2 1 Publication Order Number: MBRAF440T3/D MBRAF440, NRVBAF440 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 107°C) Symbol Value Unit VRRM VRWM VR 40 V IO A 4.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 100 Storage/Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt V/ms 10,000 ESD Rating Human Body Model Machine Model ESDHBM ESDMM 3B M4 − Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 2) Symbol Value Unit RθJL RθJA 25 90 °C/W 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Characteristic Value Unit Maximum Instantaneous Forward Voltage (Note 3) (IF = 4.0 A) VF TJ = 25°C 0.485 0.435 Maximum Instantaneous Reverse Current IR TJ = 25°C TJ = 100°C 0.3 15 (VR = 40 V) TJ = 100°C V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRAF440, NRVBAF440 TYPICAL CHARACTERISTICS 1 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C TJ = 25°C TJ = 100°C 0.1 0.10 0.30 0.20 TJ = −55°C 0.50 0.40 TJ = 125°C TJ = 100°C 0.60 0.30 0.40 0.60 0.50 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 TJ = 125°C 1E−3 TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 TJ = 125°C 10E−3 TJ = 100°C 1E−3 TJ = 25°C 100E−6 100E−9 TJ = −55°C 10E−9 1E−9 100E−12 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 TJ = −55°C 10E−6 1E−6 0 Figure 3. Typical Reverse Current 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current 1.8 1000 1.6 SQUARE WAVE 1.4 dc 1.2 1.0 0.8 Ipk/IO = p 0.6 Ipk/IO = 5 0.4 Ipk/IO = 10 0.2 40 TJ = 25 °C C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (WATTS) 0.20 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E−3 0 TJ = −55°C TJ = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 IR, REVERSE CURRENT (AMPS) 1 0.1 0.10 IR, MAXIMUM REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 Ipk/IO = 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 100 5 0 IO, AVERAGE FORWARD CURRENT (AMPS) 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 5. Forward Power Dissipation www.onsemi.com 3 35 40 IF(AV), AVERAGE FORWARD CURRENT (A) MBRAF440, NRVBAF440 8 RqJL = 25 °C/W 7 DC 6 5 SQUARE WAVE 4 3 2 1 0 0 20 40 60 80 100 120 140 TC, LEAD TEMPERATURE (°C) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Current Derating 100 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 8. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 100 1000 MBRAF440, NRVBAF440 PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b c D E E1 L D TOP VIEW A MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 RECOMMENDED SOLDER FOOTPRINT* c C SIDE VIEW SEATING PLANE 5.56 1.76 2X b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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