FQB33N10L N-Channel QFET® MOSFET 100 V, 33 A, 52 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ. 70 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D D G G D2-PAK S S Absolute Maximum Ratings Symbol VDSS TC = 25°C unless otherwise noted FQB33N10LTM 100 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current ID - Continuous (TC = 100°C) Unit V 33 A 23 A 132 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 33 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 12.7 6.0 3.75 mJ V/ns W 127 0.85 -55 to +175 W W/°C °C 300 °C dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 20 V 430 mJ Thermal Characteristics Symbol RJC RJA FQB33N10LTM Parameter Thermal Resistance, Junction to Case, Max 1.18 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max. ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 1 Unit oC/W 40 www.fairchildsemi.com FQB33N10L — N-Channel QFET® MOSFET October 2013 Device Marking Device FQB33N10LTM FQB33N10L Electrical Characteristics Symbol Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 100 -- -- V -- 0.09 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16.5 A VGS = 5 V, ID = 16.5 A -- 0.039 0.043 0.052 0.055 Ω gFS Forward Transconductance VDS = 30 V, ID = 16.5 A -- 27 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1250 1630 pF -- 305 400 pF -- 70 90 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 33 A, RG = 25 Ω (Note 4) VDS = 80 V, ID = 33 A, VGS = 5 V (Note 4) -- 17 45 ns -- 470 950 ns -- 70 150 ns -- 120 250 ns -- 30 40 nC -- 4.7 -- nC -- 16 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A ISM -- -- 132 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 33 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 90 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 33 A, dIF / dt = 100 A/µs -- 0.26 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.59mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 2 www.fairchildsemi.com FQB33N10L — N-Channel QFET® MOSFET Package Marking and Ordering Information 10 Top : ID, Drain Current [A] ID, Drain Current [A] 2 VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 2 10 1 10 1 10 175℃ 25℃ 0 10 -55℃ ※ Notes : 1. VDS = 30V 2. 250μs Pulse Test ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 0 -1 10 -1 10 0 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.20 2 10 0.16 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 5V 0.12 VGS = 10V 0.08 0.04 0 10 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test ※ Note : TJ = 25℃ -1 0.00 0 30 60 90 10 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 3600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VGS, Gate-Source Voltage [V] 3000 2400 Capacitance [pF] 1 10 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 1800 Coss 1200 Crss 600 VDS = 50V 8 VDS = 80V 6 4 2 ※ Note : ID = 33A 0 -1 10 0 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQB33N10L — N-Channel QFET® MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 16.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 35 Operation in This Area is Limited by R DS(on) 2 25 100 µ s ID , Drain Current [A] ID , Drain Current [A] 10 30 1 ms 10 ms 10 1 DC ※ Notes : 20 15 10 o 1. TC = 25 C 10 10 5 o 0 2. TJ = 175 C 3. Single Pulse 0 10 1 0 25 2 10 50 ZJC(t), Thermal Response [oC/W] Figure 9. Maximum Safe Operating Area 10 75 100 125 150 175 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N otes : 1 . Z θ J C ( t ) = 1 . 1 8 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 4 www.fairchildsemi.com FQB33N10L — N-Channel QFET® MOSFET Typical Characteristics FQB33N10L — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 6 www.fairchildsemi.com FQB33N10L — N-Channel QFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB33N10L — N-Channel QFET® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimension in Millimeters ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FQB33N10L Rev. C1 8 www.fairchildsemi.com FQB33N10L — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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