Chongqing BR1010 Single-phase silicon bridge rectifier Datasheet

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BR1005 THRU BR1010
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE:50-1000V
CURRENT:10.0A
KBPC-8/10
FEATURES
·Surge overload ratings-250 Amperes
·Low forward voltage drop
.296(7.5)
.255(6.5)
.052(1.3) DIA.
.048(1.2) TYP.
.750
(19.1)
.770(19.6)
.730(18.5)
.520(13.2)
.480(12.2)
MIN.
HOLE FOR
NO. 6 SCREW
MECHANICAL DATA
·Case:Metal or plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting: Thru hole for 6# screw
·Weight: 6.9 grams
.520(13.2) .770(19.6)
.480(12.2) .730(18.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR1005 BR101 BR102 BR104 BR106 BR108 BR1010 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Output
Current at TC=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
5.0A DC
Maximum DC Reverse Current
@ TA=25°C
at Rated DC Blocking Voltage
@ TA=100°C
per element
VRRM
VRMS
VDC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
Io
10
A
IFSM
250
A
VF
1.1
V
IR
10
µA
500
2
2
It
166
AS
I2t Rating for Fusing (t<8.3ms)
CJ
200
pF
Typical Junction Capacitance (Note 1)
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with
0.5×0.5”(13×13mm) copper pads.
1
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