Inchange Semiconductor Product Specification BDW42 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BDW47 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For general purpose and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 15 A IB Base current 0.5 A PD Total power dissipation 85 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.47 ℃/W Inchange Semiconductor Product Specification BDW42 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB=10mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=50mA 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 3.0 V ICBO Collector cut-off current VCB=100V, IE=0 1.0 mA ICEO Collector cut-off current VCE=50V, IB=0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 1000 hFE-2 DC current gain IC=10A ; VCE=4V 250 fT Transition frequency IC=3A ; VCE=3V;f=1MHz 4.0 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 2 MIN TYP. MAX 100 UNIT V MHz 200 pF Inchange Semiconductor Product Specification BDW42 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3