Rohm EM6K1 Small switching (30v, 0.1a) Datasheet

EM6K1
Transistor
Small switching (30V, 0.1A)
EM6K1
!External dimensions (Units : mm)
!Features
1) Two 2SK3019 transistors in a single EMT package.
2) The MOSFET elements are independent, eliminating
interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
(4)
(3)
(5)
(2)
1.2
1.6
(1)
0.5
0.13
(6)
0.5 0.5
1.0
1.6
0.22
EMT6
Each lead has same dimensions
Abbreviated symbol : K1
!Applications
Interfacing, switching (30V, 100mA)
!Equivalent circuit
!Structure
Silicon N-channel
MOSFET
(6)
(5)
Gate
Protection
Diode
∗
(4)
Tr1
!Packaging specifications
Package
Type
Taping
Tr2
Code
T2R
Basic ordering unit
(pieces)
8000
EM6K1
∗
Gate
Protection
Diode
(1)
(2)
(3)
(1)Tr1
(2)Tr1
(3)Tr2
(4)Tr2
(5)Tr2
(6)Tr1
Source
Gate
Drain
Source
Gate
Drain
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
!Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Drain−source voltage
VDSS
30
V
Gate−source voltage
VGSS
±20
V
Continuous
ID
100
mA
Pulsed
IDP ∗1
400
mA
Continuous
IDR
100
mA
Pulsed
IDRP
400
mA
150
mW/TOTAL
120mW/1ELEMENT
Parameter
Drain current
Reverse drain current
∗1
PD
Total power dissipation (Tc=25°C)
∗2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
EM6K1
Transistor
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
VGS=±20V, VDS=0V
V(BR)DSS
30
−
−
V
ID=10µA, VGS=0V
IDSS
−
−
1.0
µA
VDS=30V, VGS=0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS=3V, ID=100µA
Static drain−source on−starte
resistance
RDS(on)
−
5
8
Ω
ID=10mA, VGS=4V
RDS(on)
−
7
13
Ω
ID=1mA, VGS=2.5V
Forward transfer admittance
Yfs
20
−
−
mS
VDS=3V, ID=10mA
Input capacitance
Ciss
−
13
−
pF
VDS=5V
Output capacitance
Coss
−
9
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
4
−
pF
f=1MHz
Turn−on delay time
td(on)
−
15
−
ns
ID=10mA, VDD 5V
tr
−
35
−
ns
VGS=5V
td(off)
−
80
−
ns
RL=500Ω
tr
−
80
−
ns
RGS=10Ω
Gate−source leakage
Drain−source breakdown voltage
Zero gate voltage drain current
Rise time
Turn−off delay time
Fall time
Conditions
!Electrical characteristic curves
0.15
DRAIN CURRENT : ID (A)
0.1
2.5V
0.05
2V
2
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
VGS=1.5V
1
50m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
10
50
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
4
VDS=3V
ID=0.1mA
1.5
1
0.5
0
−50 −25
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (Ι)
20
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
25
50
75
100
125 150
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
15
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0
CHANNEL TEMPERATURE : Tch (°C)
Fig.2 Typical Transfer Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
20
3
2
2
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Output Characteristics
50
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
DRAIN CURRENT : ID (A)
VDS=3V
100m Pulsed
3V
3.5V
0
0
GATE THRESHOLD VOLTAGE : VGS(th) (V)
200m
4V
0.5
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
EM6K1
Transistor
0.5
8
VDS=3V
Pulsed
0.2
ID=100mA
6
ID=50mA
5
4
3
2
Ta=−25°C
25°C
75°C
125°C
0.1
0.05
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
CHANNEL TEMPERATURE : Tch (°C)
0.05 0.1 0.2
20m
0V
5m
2m
1m
0.5m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.5
0
5
1000
1.5
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
tf
500
td(off)
Coss
Crss
2
1
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage (Ι)
Ciss
10
0.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=25°C
f=1MHZ
VGS=0V
Pulsed
20
CAPACITANCE : C (pF)
REVERCE DRAIN CURRENT : IDR (A)
0.005 0.01 0.02
50
50m
VGS=4V
50m
20m
Fig.8 Forward Transfer Admittance
vs. Drain Current
Ta=25°C
Pulsed
100m
VGS=0V
Pulsed
100m
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Resistance vs.
Channel Temperature
200m
200m
0.1m
0.0005 0.001 0.002
SWITHING TIME : t (ns)
7
10m
REVERCE DRAIN CURRENT : IDR (A)
VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE :  Yfs (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
200
100
50
tr
20
td(on)
10
1
5
0.2m
0.1m
0
0.5
1
1.5
0.5
0.1
0.2
0.5
1
2
5
10
20
2
0.1 0.2
50
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage (ΙΙ)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Switching Characteristics
!Switching characteristics measurement circuits
Pulse Width
90%
VGS
VGS
RG
ID
D.U.T.
VDS
50%
10%
50%
10%
VDS
10%
RL
VDD
ton
Fig.13 Switching Time Test Circuit
90%
90%
td(on)
tr
td(off)
tf
toff
Fig.14 Switching Time Waveforms
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
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About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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