Microsemi DRF1200 Mosfet driver hybrid Datasheet

DRF1200
1000V, 13A, 30MHz
MOSFET Driver Hybrid
The DRF1200 hybrid includes a high power gate driver and the power
MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased
flexibility and lowered cost over a non-integrated solution.
D
IN
DRIVER
13A
MOSFET
FEATURES
S
TYPICAL APPLICATIONS
• Switching Frequency: DC TO 30MHz
• Switching Speed 3-4ns
• Class C, D and E RF Generators
• Low Pulse Width Distortion
• BVds = 1Kv
• Switch Mode Power Amplifiers
• Ids = 13A Max
• Pulse Generators
• Rds(on) ≤ 0.90 Ohm
• Ultrasound Transducer Drivers
• PD = 624W
• Acoustic Optical Modulators
• Single Power Supply
• 1V CMOS Schmitt Trigger Input 1V
Hysteresis
• Inverting Non-Inverting Select
• RoHS Compliant
Driver Absolute Maximum Ratings
Symbol
VDD
Parameter
Min
Typ
Supply Voltage
IN, FN
Input Single Voltages
IO PK
Output Current Peak
TJMAX
Operating Temperature
Max
15
-.7 to +5.5
Unit
V
8
A
175
°C
Driver Specifications
Parameter
Min
Typ
Max
VDD
Supply Voltage
10
15
IN
Input Voltage
3
5.5
Unit
V
IN(R)
Input Voltage Rising Edge
3
IN(F)
Input Voltage Falling Edge
3
IDDQ
Quiescent Current
2
mA
Output Current
8
A
Ciss
Input Capacitance
3
RIN
Input Parallel Resistance
1
IO
ns
MΩ
VTH(on)
Input, Voltage Threshold Low (See truth table)
0.8
1.1
VTH(off)
Input, Voltage Threshold High (See truth table)
1.9
2.2
TDLY
Time Delay (throughput)
38
tr
Rise Time
7.5
tf
Fall Time
7.5
Microsemi Website - http://www.microsemi.com
V
ns
ns
050-4913 Rev G 5-2011
Symbol
DRF1200
Driver Output Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Cout
Output Capacitance
2500
pF
Rout
Output Resistance
.8
Ω
Lout
Output Inductance
3
nH
FMAX
Operating Frequency CL = 3000nF + 50Ω
30
FMAX
Operating Frequency RL = 50Ω
50
MHz
Driver Thermal Characteristics
Symbol
Parameter
Min
Typ
RθJC
Thermal Resistance Junction to Case
1.5
RθJHS
Thermal Resistance Junction to Heat Sink
2.5
TJSTG
Storage Temperature
PDJHS
Maximum Power Dissipation @ TSINK = 25°C
60
PDJC
Total Power Dissipation @ TC = 25°C
100
Max
Unit
°C/W
°C
-55 to 150
W
MOSFET Absolute Maximum Ratings
Symbol
BVDSS
ID
RDS(on)
Tjmax
Parameter
Min
Drain Source Voltage
1000
Typ
Max
V
Continuous Drain Current THS = 25°C
13
Drain-Source On State Resistance
Unit
0.90
Operating Temperature
A
Ω
175
°C
Max
Unit
MOSFET Dynamic Characteristics
Symbol
Parameter
Min
Typ
Ciss
Input Capacitance
2000
Coss
Output Capacitance
165
Crss
Reverse Transfer Capacitance
75
pF
MOSFET Thermal Characteristics
Symbol
Parameter
Min
Typ
RθJC
Thermal Resistance Junction to Case
0.095
RθJHS
Thermal Resistance Junction to Heat Sink
0.25
TJSTG
Storage Temperature
-55 to 150
PDHS
Maximum Power Dissipation @ TSINK = 25°C
600
PDC
Total Power Dissipation @ TC = 25°C
1580
Max
Unit
°C/W
°C
W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-4913 Rev G 5-2011
Figure 1, DRF1200 Simplified Circuit Diagram
The Simplified DRF1200 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to
the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal
gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the AntiRing Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are
referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specifically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS.
DRF1200
The Function (FN, pin 3) is the invert or non-invert select Pin, it is Internally held high.
Truth Table *Referenced to SG
FN (pin 3)*
IN (pin 4)*
MOSFET
HIGH
HIGH
ON
HIGH
LOW
OFF
LOW
HIGH
OFF
LOW
LOW
ON
Figure 2, DRF1200 Test Circuit
The Test Circuit illustrated above was used to evaluate the DRF1200 (available as an evaluation Board DRF12XX / EVALSW.) The input control signal is applied to the DRF1200 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the signal
ground currents.
050-4913 Rev G 5-2011
The +VDD inputs (2,6) are by-passed (C1, C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used
for this function must be capable of supporting the RMS currents and frequency of the gate load. RL set for IDM at VDS max this load is used to
evaluate the output performance of the DRF1201.
DRF1200
Pin Assignments
Pin 1
Ground
Pin 2
+Vdd
Pin 3
FN
Pin 4
IN
Pin 5
SG
Pin 6
+Vdd
Pin 7
Ground
Pin 8
Source
Pin 9
Drain
Pin 10
Source
050-4913 Rev G 5-2011
All dimensions are ± .005
Figure 3, DRF1200 Mechanical Outline
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