Diodes MMST4403-7-F Pnp small signal surface mount transistor Datasheet

MMST4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMST4401)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
C
B C
Mechanical Data
•
•
•
•
•
•
•
•
•
SOT-323
A
B
E
G
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking Information: K3T - See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.006 grams (approximate)
Maximum Ratings
H
K
M
J
D
E
L
C
E
B
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.80
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
α
0°
8°
All Dimensions in mm
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current – Continuous (Note 1)
IC
-600
mA
Power Dissipation (Note 1)
Pd
200
mW
RθJA
625
K/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants..
DS30083 Rev. 7 - 2
1 of 4
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MMST4403
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -100μA, IC = 0
ICEX
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
IBL
⎯
-100
nA
VCE = -35V, VEB(OFF) = -0.4V
hFE
30
60
100
100
20
VCE(SAT)
⎯
VBE(SAT)
-0.75
⎯
⎯
⎯
⎯
300
⎯
-0.40
-0.75
-0.95
-1.30
⎯
8.5
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC =
IC =
IC =
IC =
IC =
IC =
IC =
IC =
IC =
⎯
V
V
-100μA, VCE = -1.0V
-1.0mA, VCE = -1.0V
-10mA, VCE = -1.0V
-150mA, VCE = -2.0V
-500mA, VCE = -2.0V
-150mA, IB = -15mA
-500mA, IB = -50mA
-150mA, IB = -15mA
-500mA, IB = -50mA
B
B
B
B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cob
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
Input Impedance
hie
1.5
30
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
60
500
⎯
Output Admittance
hoe
1.0
100
μS
fT
200
⎯
MHz
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tr
⎯
30
ns
Current Gain-Bandwith Product
-4
VCE = -10V, IC = -1.0mA,
f = 1.0MHz
VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
VCE = -30V, IC = -150mA,
VBE(OFF) = -2.0V, IB1 = -15mA
VCE = -30V, IC = -150mA,
IB1 = IB2 = -15mA
5. Short duration pulse test used to minimize self-heating effect
1,000
300
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
350
250
200
150
100
100
10
50
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
25
DS30083 Rev. 7 - 2
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1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 DC Current Gain vs. Collector Current
MMST4403
© Diodes Incorporated
1.6
VCE COLLECTOR-EMITTER VOLTAGE (V)
30
CAPACITANCE (pF)
20
Cibo
10
5.0
Cobo
1.0
-0.1
-1.0
-10
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
I C = 10mA
IC = 1mA
I C = 100mA I = 300mA
C
IC = 30mA
1.0
0.8
0.6
0.4
0.2
1
0.1
10
100
0.01
IB BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
1,000
IC
IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.2
0
0.001
-30
0.5
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
T A = 50°C
0
1.4
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base-Emitter Voltage
vs. Collector Current
100
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
DS30083 Rev. 7 - 2
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MMST4403
© Diodes Incorporated
Ordering Information
(Note 4 and 6)
Packaging
SOT-323
Device
MMST4403-7-F
Notes:
Shipping
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K3T
Date Code Key
Year
Code
1998
J
Month
Code
Jan
1
1999
K
2000
L
Feb
2
2001
M
Mar
3
YM
Marking Information
2002
N
Apr
4
K3T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
May
5
2004
R
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30083 Rev. 7 - 2
4 of 4
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MMST4403
© Diodes Incorporated
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