HCF4503 HEX BUFFER 1 TTL-LOAD OUTPUT DRIVE CAPABILITY 2 OUTPUT-DISABLE CONTROLS ■ 3 STATE OUTPUTS ■ 5V, 10V, AND 15V PARAMETRIC RATINGS ■ QUIESCENT CURRENT SPECIFIED UP TO 15V ■ INPUT CURRENT OF 300nA AT 15V AND 25°C ■ 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N0. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” ■ ■ DESCRIPTION The HCF4503B is a monolithic integrated circuits, available in 16-lead dual in-line plastic package and plastic micro package. DIP SOP ORDER CODES PACKAGE TUBE DIP HCF4503BEY SOP HCF4503BM1 T& R HCF4503M013TR The HCF4503B is a hex noninverting buffer with 3-state outputs having high sink and source-current capability. Two disable controls are provided, one of which controls four buffers and the other controls the remaining two buffers. PIN CONNECTION February 2000 1/10 HCF4503B FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATING Symbol VDD * Parameter Supply Voltage Value Unit -0.5 to +18 V -0.5 to VDD + 0.5 V Vi Input Voltage II DC Input Current (any one input) ± 10 mA Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range 200 mW 100 mW Ptot Top Operating Temperature -40 to +85 o Tstg Storage Temperature -65 to +150 o C C Stresses above those listedunder ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation ofthe device atthese or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratingconditions for external periods may affect device reliability. * Allvoltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit Supply Voltage 3 to 15 V VI Input Voltage 0 to VDD V Top Operating Temperature VDD 2/10 -40 to +85 o C HCF4503B LOGIC DIAGRAM AND TRUTH TABLE DN DIS A (B) QN 0 0 0 1 0 1 X 1 High Z X = Don’t care 3/10 HCF4503B STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Symb ol Parameter T est Cond it ios VI (V) IL VOH VOL Quiescent Current Output High Voltage Output Low Voltage VO (V) VIL IOH 0/5 5 4 0.02 4 30 10 8 0.02 8 60 0/15 15 16 0.02 16 120 0/5 <1 5 4.95 4.95 4.95 0/10 <1 10 9.95 9.95 9.95 0/15 <1 15 14.95 14.95 14.95 5/0 <1 5 0.05 0.05 0.05 <1 10 0.05 0.05 0.05 IOL Input Low Voltage Output Sink Current 0.05 0.05 <1 15 0.5/4.5 <1 5 3.5 3.5 3.5 1/9 <1 10 7 7 7 1.5/13.5 <1 15 11 4.5/0.5 <1 5 1.5 1.5 1.5 9/1 <1 10 3 3 3 13.5/1.5 <1 15 11 4 4 V 5 -4.8 -4.1 -5.2 -2.9 0/5 4.6 5 -1 -0.8 -1.6 -0.6 0/10 9.5 10 -2.5 -2.2 -3.1 -1.6 0/15 13.5 15 -6.8 -5.8 -11.9 -4.2 0/5 0.4 5 2.1 1.8 1.9 1.2 0/10 0.5 10 5.4 4.7 5.3 3.3 15 16 13.7 19.5 9.7 1.5 0/15 Any Input 15 ±0.3 ±10 IOZ 3-state Output Leakage Current 0/15 Any Input 15 ±1.0 ±10 -4 ±1.0 CI Input Capacitance 5 -5 ±0.3 7.5 TheNoise Margin for both ”1” and ”0” level is: 1V min.withV DD = 5 V, 2 V min.with VDD = 10 V, 2.5 V min. with VDD = 15 V V 4 2.5 0/15 4/10 0.05 0/5 Any Input V 11 Input Leakage Current IIH, IIL µA V 10/0 Input High Voltage Output Drive Current Un it 0/10 15/0 VIH Valu e |IO | V DD -40 oC 25 o C 85 o C (µA) (V) Min. Max. Min. T yp. Max. Min . Max. mA mA ±1 µA ±7.5 µA pF HCF4503B DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 oC, CL = 50 pF, RL = 200 KΩ, typical temperaturecoefficent for all VDD values is 03 %/oC, all input rise and fall times= 20 ns) Symb ol tPLH tPHL Parameter Propagation Delay Time Propagation Delay Time tPHZ tPZH 3-State Propagation Delay Time tPZL tPLZ 3-State Propagation Delay Time tTLH Transition Time tTHL Transition Time N-Channel Output Low (sink) Current Characteristics. T est Cond ition s V DD (V) 5 10 15 5 10 Min. Value Typ. Max. Un it 75 35 25 55 25 150 70 50 110 50 15 5 10 15 5 10 15 17 70 30 25 90 40 35 35 140 60 50 180 80 70 5 10 50 30 90 45 ns 15 5 10 15 25 35 20 13 35 70 40 25 ns ns ns ns ns P-Channel Output High (source) Current Characteristics. 5/10 HCF4503B Typical Propagation Delay Time vs. Load Capacitance. Typical Transition Time vs. Load Capacitance. Typical Dynamic Power Dissipation vs. TEST CIRCUITS Quiescent Device Current. 6/10 Input Voltage. HCF4503B TEST CIRCUIT (continued) Input Leakage Current. Dynamic Power Dissipation. 7/10 HCF4503B Plastic DIP-14 MECHANICAL DATA mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 8/10 HCF4503B SO-14 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 e3 0.050 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8 (max.) P013G 9/10 HCF4503B Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. 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