STMicroelectronics HCF4503BEY Hex buffer Datasheet

HCF4503

HEX BUFFER
1 TTL-LOAD OUTPUT DRIVE CAPABILITY
2 OUTPUT-DISABLE CONTROLS
■ 3 STATE OUTPUTS
■ 5V, 10V, AND 15V PARAMETRIC RATINGS
■ QUIESCENT CURRENT SPECIFIED UP TO
15V
■ INPUT CURRENT OF 300nA AT 15V AND
25°C
■ 100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
TENTATIVE STANDARD N0. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
■
■
DESCRIPTION
The HCF4503B is a monolithic integrated circuits,
available in 16-lead dual in-line plastic package
and plastic micro package.
DIP
SOP
ORDER CODES
PACKAGE
TUBE
DIP
HCF4503BEY
SOP
HCF4503BM1
T& R
HCF4503M013TR
The HCF4503B is a hex noninverting buffer with
3-state outputs having high sink and
source-current capability. Two disable controls
are provided, one of which controls four buffers
and the other controls the remaining two buffers.
PIN CONNECTION
February 2000
1/10
HCF4503B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATING
Symbol
VDD *
Parameter
Supply Voltage
Value
Unit
-0.5 to +18
V
-0.5 to VDD + 0.5
V
Vi
Input Voltage
II
DC Input Current (any one input)
± 10
mA
Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package Temperature Range
200
mW
100
mW
Ptot
Top
Operating Temperature
-40 to +85
o
Tstg
Storage Temperature
-65 to +150
o
C
C
Stresses above those listedunder ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation ofthe device atthese or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum ratingconditions for external periods may affect device reliability.
* Allvoltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
Supply Voltage
3 to 15
V
VI
Input Voltage
0 to VDD
V
Top
Operating Temperature
VDD
2/10
-40 to +85
o
C
HCF4503B
LOGIC DIAGRAM AND TRUTH TABLE
DN
DIS A (B)
QN
0
0
0
1
0
1
X
1
High Z
X = Don’t care
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HCF4503B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Symb ol
Parameter
T est Cond it ios
VI
(V)
IL
VOH
VOL
Quiescent Current
Output High
Voltage
Output Low
Voltage
VO
(V)
VIL
IOH
0/5
5
4
0.02
4
30
10
8
0.02
8
60
0/15
15
16
0.02
16
120
0/5
<1
5
4.95
4.95
4.95
0/10
<1
10
9.95
9.95
9.95
0/15
<1
15
14.95
14.95
14.95
5/0
<1
5
0.05
0.05
0.05
<1
10
0.05
0.05
0.05
IOL
Input Low
Voltage
Output Sink Current
0.05
0.05
<1
15
0.5/4.5
<1
5
3.5
3.5
3.5
1/9
<1
10
7
7
7
1.5/13.5
<1
15
11
4.5/0.5
<1
5
1.5
1.5
1.5
9/1
<1
10
3
3
3
13.5/1.5
<1
15
11
4
4
V
5
-4.8
-4.1
-5.2
-2.9
0/5
4.6
5
-1
-0.8
-1.6
-0.6
0/10
9.5
10
-2.5
-2.2
-3.1
-1.6
0/15
13.5
15
-6.8
-5.8
-11.9
-4.2
0/5
0.4
5
2.1
1.8
1.9
1.2
0/10
0.5
10
5.4
4.7
5.3
3.3
15
16
13.7
19.5
9.7
1.5
0/15
Any
Input
15
±0.3
±10
IOZ
3-state Output
Leakage Current
0/15
Any
Input
15
±1.0
±10 -4 ±1.0
CI
Input Capacitance
5
-5
±0.3
7.5
TheNoise Margin for both ”1” and ”0” level is: 1V min.withV DD = 5 V, 2 V min.with VDD = 10 V, 2.5 V min. with VDD = 15 V
V
4
2.5
0/15
4/10
0.05
0/5
Any Input
V
11
Input Leakage
Current
IIH, IIL
µA
V
10/0
Input High
Voltage
Output Drive
Current
Un it
0/10
15/0
VIH
Valu e
|IO | V DD
-40 oC
25 o C
85 o C
(µA) (V) Min. Max. Min. T yp. Max. Min . Max.
mA
mA
±1
µA
±7.5
µA
pF
HCF4503B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 oC, CL = 50 pF, RL = 200 KΩ,
typical temperaturecoefficent for all VDD values is 03 %/oC, all input rise and fall times= 20 ns)
Symb ol
tPLH
tPHL
Parameter
Propagation Delay Time
Propagation Delay Time
tPHZ
tPZH
3-State Propagation Delay Time
tPZL
tPLZ
3-State Propagation Delay Time
tTLH
Transition Time
tTHL
Transition Time
N-Channel Output Low (sink) Current
Characteristics.
T est Cond ition s
V DD
(V)
5
10
15
5
10
Min.
Value
Typ. Max.
Un it
75
35
25
55
25
150
70
50
110
50
15
5
10
15
5
10
15
17
70
30
25
90
40
35
35
140
60
50
180
80
70
5
10
50
30
90
45
ns
15
5
10
15
25
35
20
13
35
70
40
25
ns
ns
ns
ns
ns
P-Channel Output High (source) Current
Characteristics.
5/10
HCF4503B
Typical Propagation Delay Time vs. Load
Capacitance.
Typical Transition Time vs. Load Capacitance.
Typical Dynamic Power Dissipation vs.
TEST CIRCUITS
Quiescent Device Current.
6/10
Input Voltage.
HCF4503B
TEST CIRCUIT (continued)
Input Leakage Current.
Dynamic Power Dissipation.
7/10
HCF4503B
Plastic DIP-14 MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
1.39
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
1.27
0.130
2.54
0.050
0.100
P001A
8/10
HCF4503B
SO-14 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
e3
0.050
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 (max.)
P013G
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HCF4503B
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
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