DMP2010UFV 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary BVDSS -20V Features RDS(ON) Max ID Max TC = +25°C Low RDS(ON) – Ensures On State Losses Are Minimized -50A Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 9.5mΩ @ VGS = -4.5V 12.5mΩ @ VGS = -2.5V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Applications Case: PowerDI 3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Load Switch Power Management Functions ® PowerDI3333-8 (Type UX) Pin1 S S D S G G D Top View D D S D Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2010UFV-7 DMP2010UFV-13 Notes: Case PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. YYWW Marking Information SV9 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) SV9 PowerDI is a registered trademark of Diodes Incorporated. DMP2010UFV Document number: DS39131 Rev. 1 - 2 1 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP2010UFV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS TC = +25°C TC = +70°C Continuous Drain Current, VGS = -4.5V (Note 7) ID Maximum Continuous Body Diode Forward Current (Note 7) Value -20 ±10 Unit V V -50 -40 A IS IDM -50 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) -80 A Avalanche Current, L = 0.1mH (Note 8) IAS -35 A Avalanche Energy, L = 0.1mH (Note 8) EAS 64 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Steady State Steady State Value 1.0 122 2.0 62 3.5 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Symbol Min Typ BVDSS IDSS IGSS — — — — µA Unit VSD — 7.5 9.5 -0.7 V — — — Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — Test Condition -250µA VGS(TH) RDS(ON) Max VDS = VGS, ID = -250µA mΩ -1.2 — — — — — — — — — — — — — — V VGS = 0V, IS = -10A pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -10V, ID = -3.6A VGS ns ns nC IF = -3.6A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP2010UFV Document number: DS39131 Rev. 1 - 2 2 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP2010UFV 30 30.0 VGS= -2.0V VDS= -5V 25 VGS= -2.5V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS= -3.0V VGS= -4.0V 15.0 VGS= -4.5V 10.0 VGS= -1.5V 5.0 20 15 10 85℃ 125℃ 5 25℃ 150℃ VGS= -1.2V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 2 0.015 1 1.5 2 2.5 0.012 VGS= -2.5V 0.009 VGS= -4.5V 0.006 0.003 0.02 0.018 0.016 0.014 0.012 0.01 ID= -3.6A 0.008 0.006 0.004 0.002 0 0 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 10 2.5 0.015 VGS= -4.5V 0.012 85℃ 125℃ 150℃ 0.009 25℃ -55℃ 0.006 0.003 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 -55℃ 0 0.0 2 VGS= -4.5V, ID= -5A 1.5 1 VGS= -2.5V, ID= -5A 0.5 0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMP2010UFV Document number: DS39131 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature March 2017 © Diodes Incorporated DMP2010UFV 0.015 VGS= -2.5V, ID= -5A 0.01 VGS= -4.5V, ID= -5A 0.005 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 1 ID= -1mA 0.8 ID= -250μA 0.6 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 30 CT, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 25 VGS=0V, TJ=125℃ 20 VGS=0V, TJ=150℃ 15 VGS=0V, TJ=85℃ 10 VGS=0V, TJ=25℃ 5 VGS=0V, TJ=-55℃ Ciss 1000 Coss Crss 100 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 10 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 20 6 VDS= -10V, ID= -3.6A 4 PW = 100µs 10 DC PW = 10s 1 PW = 1s 0.1 2 TJ(Max) = 150℃ TC = 25℃ PW = 100ms Single Pulse PW = 10ms DUT on 1*MRP Board PW = 1ms VGS = -4.5V 0.01 0 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 11. Gate Charge DMP2010UFV Document number: DS39131 Rev. 1 - 2 90 100 4 of 7 www.diodes.com 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 March 2017 © Diodes Incorporated DMP2010UFV 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 125℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP2010UFV Document number: DS39131 Rev. 1 - 2 5 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP2010UFV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) D A D1 A1 0 E1 E c L E2 E2a E2b D2 k L b PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) X3 8 Y2 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y4 X1 Y1 Y3 Y 1 X DMP2010UFV Document number: DS39131 Rev. 1 - 2 C 6 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP2010UFV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP2010UFV Document number: DS39131 Rev. 1 - 2 7 of 7 www.diodes.com March 2017 © Diodes Incorporated