Avic AV1815LT1 Sot-23 plastic-encapsulate transistor Datasheet

@vic
AV1815LT1
SOT-23 Plastic-Encapsulate Transistors
AV1815LT1
SOT—23
TRANSISTOR( NPN )
1. BASE
2. EMITTER
FEATURES
3. COLLECTOR
1.0
Power dissipation
PCM :
0.2
W(Tamb=25℃)
Collector current
ICM:
0.15
A
Collector-base voltage
V(BR)CBO : 60
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150
0.95
0.4
0.95
1.9
2.9
2.4
1.3
ELECTRICAL CHARACTERISTICS(Tamb=25℃
otherwise specified)
Parameter
Symbol
Unit : mm
unless
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA,
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.1mA, IB=0
Collector cut-off current
ICBO
VCB=60 V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=50 V , IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V ,
0.1
μA
DC current gain
hFE(1)
IE=0
60
V
50
V
IC=0
VCE= 6V, IC= 2mA
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 10m A
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100 mA, IB= 10m A
1
V
VCE=10V,
fT
Transition frequency
IC= 1mA
80
MHz
f=30MHz
CLASSIFICATION OF h FE(1)
Rank
L
H
Range
130-200
200-400
DEVICE MARKING : C1815LT1=HF
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com
@vic
AV1815LT1
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
θ
b
L
E
E1
L1
0.2
e
C
Symbol
A
A1
A2
e1
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.900
1.100
0.035
0.043
A1
0.000
0.100
0.000
0.004
A2
0.900
1.000
0.035
0.039
b
0.300
0.500
0.012
0.020
c
0.080
0.150
0.003
0.006
D
2.800
3.000
0.110
0.118
E
1.200
1.400
0.047
0.055
E1
2.250
2.550
0.089
e
e1
1.800
L
0.100
0.037TPY
0.950TPY
2.000
0.071
0.550REF
0.079
0.022REF
L1
0.300
0.500
0.012
0.020
θ
0°
8°
0°
8°
Copyright @vic Electronics Corp.
2
Website http://www.avictek.com
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