MURD620CT SWITCHMODE Power Rectifier DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. http://onsemi.com ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS Features • • • • Ultrafast 35 Nanosecond Recovery Time Low Forward Voltage Drop Low Leakage Pb−Free Packages are Available 1 4 Mechanical Characteristics: 3 • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 140°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, Per Diode 20 kHz, TC = 145°C) IF Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) Operating Junction and Storage Temperature Range 4 1 2 DPAK CASE 369C 3 A Y WW U620T G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION 6.0 A Package Shipping† DPAK 75 Units/Rail MURD620CTG DPAK (Pb−Free) 75 Units/Rail MURD620CTT4 DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel Device MURD620CT IFSM 50 A TJ, Tstg −65 to +175 °C MURD620CTT4G Symbol AYWW U 620TG A 3.0 6.0 THERMAL CHARACTERISTICS (Per Diode) Rating MARKING DIAGRAM Value Unit Thermal Resistance, Junction−to−Case RqJC 9 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 80 °C/W †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Rating applies when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 9 1 Publication Order Number: MURD620CT/D MURD620CT ELECTRICAL CHARACTERISTICS (Per Diode) Rating Symbol Maximum Instantaneous Forward Voltage Drop (Note 2) (iF = 3 Amps, TC = 25°C) (iF = 3 Amps, TC = 125°C) (iF = 6 Amps, TC = 25°C) (iF = 6 Amps, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (TJ = 25°C, Rated dc Voltage) (TJ = 125°C, Rated dc Voltage) iR Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C) trr Value Unit V 1 0.96 1.2 1.13 mA 5 250 ns 35 25 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 100 IR, REVERSE CURRENT (mA) 70 50 20 10 7.0 150°C 1 100°C 0.1 0.01 25°C 0.001 0.0001 0 20 40 5.0 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 2. Typical Leakage Current* (Per Leg) 3.0 175°C * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficiently below rated VR. TJ = 25°C 2.0 150°C 100°C 1.0 0.7 0.5 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (V) 1.4 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 30 TJ = 175°C 10 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 5.0 10 SINE WAVE IPK/IAV = 20 dc SQUARE WAVE TJ = 175°C 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage (Per Leg) Figure 3. Average Power Dissipation (Per Leg) http://onsemi.com 2 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 8.0 RATED VOLTAGE APPLIED RqJC = 9°C/W 7.0 6.0 TJ = 175°C 5.0 dc 4.0 SINE WAVE OR SQUARE WAVE 3.0 2.0 1.0 0 100 110 120 130 140 150 160 170 4.0 RATED VOLTAGE APPLIED RqJA = 80°C/W 3.5 3.0 SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED 2.5 2.0 dc TJ = 175°C 1.5 SINE WAVE OR SQUARE WAVE 1.0 0.5 0 180 0 20 40 60 80 100 120 140 160 180 200 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case (Per Leg) Figure 5. Current Derating, Ambient (Per Leg) 100 C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) MURD620CT TJ = 25°C 10 1 0 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 6. Typical Capacitance (Per Leg) http://onsemi.com 3 90 100 MURD620CT PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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