Jiangsu FMQT4292 Transistor Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-08A Plastic-Encapsulate Transistors
FMQT4292
TRANSISTOR
WBFBP-08A
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
(4×4×0.5)
unit: mm
FEATURES
z
Complementary Pair
z
Tow A42-Type NPN, Tow A92-Type PNP
z
Epitaxial Planar Die Construction
1
APPLICATION
IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 4292
4292
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
A42
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
310
V
VCEO
Collector-Emitter Voltage
305
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
TJ, Tstg
Junction and Storage Temperature
-55-150
℃
RӨJA
Thermal Resistance, junction to Ambient
200
℃/mW
RӨJC
Thermal Resistance, unction to Case
83.3
℃/mW
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
A92
Symbol
Value
Units
VCBO
Collector-Base Voltage
Parameter
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
TJ, Tstg
Junction and Storage Temperature
-55-150
℃
RӨJA
Thermal Resistance, junction to Ambient
200
℃/mW
RӨJC
Thermal Resistance, unction to Case
83.3
℃/mW
A42
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless
Symbol
otherwise
Test
specified)
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
310
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1 mA, IB=0
305
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=200V, IE=0
0.25
µA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
µA
HFE(1)
VCE= 10V, IC= 1mA
60
HFE(2)
VCE= 10V, IC=10mA
100
HFE(3)
VCE=10V, IC=30mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=20 mA, IB= 2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC= 20 mA, IB=2mA
0.9
V
DC current gain
A92
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
VCE= 20V, IC= 10mA
fT
Transition frequency
Symbol
50
f=30MHz
unless
Test
otherwise
conditions
200
MHz
specified)
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA, IE=0
-300
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -1mA, IB=0
-300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-200V, IE=0
-0.25
µA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
µA
HFE(1)
VCE= -10V, IC= -1mA
60
HFE(2)
VCE= -10V, IC=-10mA
100
HFE(3)
VCE= -10V, IC=-30mA
60
Collector-emitter saturation voltage
VCE(sat)
IC=-20 mA, IB= -2mA
-0.2
V
Base-emitter saturation voltage
VBE(sat)
IC= -20 mA, IB= -2mA
-0.9
V
DC current gain
Transition frequency
fT
VCE=-20V, IC= -10mA
f=30MHz
50
200
MHz
A42
A92
Symbol
A
A1
b
D
E
D1
E1
D2
E2
e
L
k
z
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.000
0.100
0.350
0.450
3.900
4.100
3.900
4.100
1.120 REF.
1.120 REF.
0.900 REF.
0.900 REF.
1.000 TYP.
0.450 REF.
0.300 REF.
0.300 REF.
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.014
0.018
0.154
0.161
0.154
0.161
0.044 REF.
0.044 REF.
0.035 REF.
0.035 REF.
0.040 TYP.
0.018 REF.
0.012 REF.
0.012 REF.
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