NSS20500UW3T2G 20 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device http://onsemi.com −20 VOLTS 7.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 50 mW COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −20 Vdc Collector-Base Voltage VCBO −20 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Collector Current − Continuous IC −5.0 Adc Collector Current − Peak ICM −7.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C 2 EMITTER 3 WDFN3 CASE 506AU 2 1 MARKING DIAGRAM VC M G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 875 7.0 mW mW/°C RqJA (Note 1) 143 °C/W PD (Note 2) 1.5 11.8 W mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 85 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 2) 23 °C/W Total Device Dissipation (Single Pulse < 10 sec) PDsingle (Notes 2 & 3) 3.0 W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Junction and Storage Temperature Range 1 VC = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping † NSS20500UW3T2G WDFN3 (Pb−Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz copper traces. 2. FR−4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 0 1 Publication Order Number: NSS20500UW3/D NSS20500UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −20 − − −20 − − −7.0 − − − − −0.1 − − −0.1 250 250 220 200 180 − − 300 300 250 − − − − − − − − − − − −0.010 −0.050 −0.080 −0.150 −0.200 −0.270 −0.015 −0.070 −0.100 −0.170 −0.240 −0.260 − 0.76 −0.900 − 0.80 −0.900 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −20 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) (IC = −3.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) (IC = −3.0 A, IB = −0.030 A) (IC = −4.0 A, IB = −0.400 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 475 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 180 pF td − − 100 ns Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) tr − − 150 ns Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) ts − − 350 ns Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) tf − − 200 ns SWITCHING CHARACTERISTICS Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. http://onsemi.com 2 NSS20500UW3T2G 3.5 IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.5 0.4 0.3 VCE(sat) = 150°C 0.2 25°C 0.1 −55°C 0 0.001 0.01 0.1 1.0 10 VCE(sat) = −55°C 1.5 1.0 150°C 0.5 25°C 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.4 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150°C (5 V) 650 150°C (2 V) 550 25°C (5 V) 450 350 25°C (2 V) 250 −55°C (5 V) 150 −55°C (2 V) 50 0.001 0.01 0.1 1 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.1 VCE = −1.0 V −55°C 0.9 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.1 0.001 1.2 0.2 0.001 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 2.0 IC, COLLECTOR CURRENT (A) 750 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 2.5 0 0.001 850 1.0 IC/IB = 100 3.0 0.01 0.1 1.0 10 1.0 10 mA 100 mA 300 mA IC = 500 mA 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS20500UW3T2G 260 Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 500 450 400 350 300 250 Cobo (pF) 240 220 200 180 160 140 120 100 200 80 0 1.0 2.0 3.0 4.0 5.0 6.0 0 5.0 10 15 20 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1 1.0 mS IC (A) Cibo, INPUT CAPACITANCE (pF) 550 1.0 S Thermal Limit 0.1 0.01 0.01 10 mS 100 mS 0.1 1 10 VCE (Vdc) Figure 9. PNP Safe Operating Area http://onsemi.com 4 100 25 NSS20500UW3T2G PACKAGE DIMENSIONS WDFN3 CASE 506AU−01 ISSUE O D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 0.10 C DIM A A1 A3 b D D2 E E2 e K L E MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 INCHES NOM 0.030 0.008 REF 0.012 0.079 BSC 0.059 0.055 0.079 BSC 0.039 0.035 0.051 BSC 0.014 REF 0.014 0.016 0.010 MAX 0.031 0.002 0.014 0.063 0.043 0.018 TOP VIEW SOLDERING FOOTPRINT* A 0.10 C 1.300 2X 8X 0.08 C SEATING PLANE (A3) SIDE VIEW A1 0.400 0.600 C 0.250 D2 e 1.100 e/2 2X 0.300 2 1 L 0.400 K 0.275 1.600 E2 3 3X b *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW http://onsemi.com 5 NSS20500UW3T2G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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