ON NDF04N60ZG N-channel power mosfet 600 v, 2.0 ohm Datasheet

NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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VDSS (@ TJmax)
RDS(on) (MAX) @ 2 A
650 V
2.0 Ω
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Symbol
NDF
VDSS
NDD
600
ID
4.8
4.1
A
Continuous Drain Current RqJC, TA =
100°C (Note 1)
ID
3.0
2.6
A
Pulsed Drain Current,
VGS @ 10V
IDM
20
20
A
Power Dissipation RqJC
PD
30
83
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy, ID = 4.0
A
EAS
120
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%, TA = 25°C)
(Figure 15)
VISO
Peak Diode Recovery (Note 2)
dV/dt
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current
(Body Diode)
IS
4.0
A
Maximum Temperature for Soldering
Leads
TL
260
°C
TJ, Tstg
−55 to 150
°C
Operating Junction and
Storage Temperature Range
D (2)
V
Continuous Drain Current RqJC (Note 1)
4500
N−Channel
Unit
−
G (1)
S (3)
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
1
1
2
3
NDF04N60ZG
TO−220FP
CASE 221D
2
3
NDF04N60ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD04N60Z−1G
IPAK
CASE 369D
1 2
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 8
1
Publication Order Number:
NDF04N60Z/D
NDF04N60Z, NDD04N60Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
NDF04N60Z
NDD04N60Z
RqJC
4.2
1.5
°C/W
(Note 3) NDF04N60Z
(Note 4) NDD04N60Z
(Note 3) NDD04N60Z−1
RqJA
50
38
80
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 2.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 50 mA
VGS(th)
Forward Transconductance
VDS = 15 V, ID = 2.0 A
gFS
±10
mA
1.8
2.0
W
3.9
4.5
V
ON CHARACTERISTICS (Note 5)
3.0
3.3
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Ciss
427
535
640
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Coss
50
62
75
Crss
8
14
20
Total Gate Charge (Note 6)
Qg
10
19
29
Gate−to−Source Charge (Note 6)
VDD = 300 V, ID = 4.0 A,
VGS = 10 V
Qgs
2
3.9
6
Qgd
5
10
15
Output Capacitance (Note 6)
Reverse Transfer Capacitance
(Note 6)
Gate−to−Drain (“Miller”) Charge
pF
nC
nC
Plateau Voltage
VGP
6.5
V
Gate Resistance
Rg
4.7
W
td(on)
13
ns
tr
9.0
td(off)
24
tf
15
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 4.0 A, di/dt = 100 A/ms
trr
285
ns
Qrr
1.3
mC
Reverse Recovery Charge
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
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2
1.6
V
NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
8
VGS = 15 V
TJ = 25°C
10 V
7V
6
VDS ≥ 30 V
ID, DRAIN CURRENT (A)
8
6.8 V
6.6 V
4
6.4 V
6.2 V
6.0 V
2
6
4
TJ = 150°C
TJ = 25°C
2
5.8 V
5.6 V
0
5
10
15
20
25
TJ = −55°C
3
5
7
6
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 2 A
TJ = 25°C
3
2.5
2
1.5
5
6
7
8
9
10
VGS (V)
3
TJ = 25°C
2.5
2
VGS = 10 V
1.5
1
0.5
1
1.5
2
2.5
3
3.5
4
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
10,000
VGS = 0 V
ID = 2 A
VGS = 10 V
2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3.5
1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.4
0.8
TJ = 150°C
1000
100
TJ = 100°C
0.2
−50
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
600
NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
800
Ciss
600
Coss
0
Crss
0
50
100
150
200
t, TIME (ns)
VDS
5
0
100
TJ = 25°C
ID = 4 A
0
5
15
10
tr
tf
1
10
0
20
4
td(off)
VGS = 0 V
TJ = 25°C
3
2
1
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
VGS ≤ 30 V
Single Pulse
TC = 25°C
100 ms
1 ms
10 ms
dc
10 ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
1
0.01
0.1
Qgd
Figure 7. Capacitance Variation
td(on)
0.1
200
Qgs
Qg, TOTAL GATE CHARGE (nC)
VDD = 300 V
ID = 4 A
VGS = 10 V
10
300
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
QT
15
10
400
200
400
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
f = 1.0 MHz
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
1200
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
1000
1 ms
10 ms
10
10 ms
dc
1
VGS ≤ 30 V
Single Pulse
TC = 25°C
0.1
0.01
100 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF04N60Z
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDD04N60Z
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4
1000
NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
10
R(t) (C/W)
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1
2.0%
1.0%
RqJC = 4.2°C/W
Steady State
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (s)
Figure 13. Thermal Impedance for NDF04N60Z
10
R(t) (C/W)
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
RqJC = 1.5°C/W
Steady State
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 14. Thermal Impedance for NDD04N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 15. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
100
1000
NDF04N60Z, NDD04N60Z
ORDERING INFORMATION
Package
Shipping†
NDF04N60ZG
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF04N60ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDD04N60Z−1G
IPAK
(Pb−Free, Halogen−Free)
75 Units / Rail
NDD04N60ZT4G
DPAK
(Pb−Free, Halogen−Free)
2500 / Tape and Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
4
Drain
Source
1 2 3
Gate Drain Source
Drain
TO−220FP
IPAK
A
Y
WW
G, H
4
Drain
YWW
4N
60ZG
Gate
YWW
4N
60ZG
NDF04N60ZG
or
NDF04N60ZH
AYWW
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
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6
2
1 Drain 3
Gate Source
DPAK
NDF04N60Z, NDD04N60Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
B
M
M
Y
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE D
A
E
B
P
E/2
0.14
Q
D
M
B A
M
A
H1
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
SEATING
PLANE
c
b
0.25
M
B A
M
C
A2
e
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7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.10
3.00
3.40
2.80
3.20
NDF04N60Z, NDD04N60Z
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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8
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF04N60Z, NDD04N60Z
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369AA
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NDF04N60Z/D