NTD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • Low RDS(on) High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits V(BR)DSS RDS(ON) TYP ID MAX (Note 1) 40 V 8.7 mΩ @ 10 V 70 A N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 70 A Continuous Drain Current − RJC (Note 1) Steady State TC = 125°C Power Dissipation − RJC (Note 1) Steady State TC = 25°C Pulsed Drain Current TC = 25°C PD 100 W MARKING DIAGRAM 4 tp = 10 s Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 ) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM 150 A TJ, TSTG −55 to 175 °C 1 2 IS 63.5 A EAS 450 mJ DPAK CASE 369C STYLE 2 TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS (Note 1) Junction−to−Case (Drain) S 40 Operating Junction and Storage Temperature Parameter G Symbol Max Units RθJC 1.5 °C/W 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 1 3 Y WW 5406N G YWW 54 06NG = Year = Work Week = Specific Device Code = Pb−Free Device ORDERING INFORMATION Device Package Shipping† NTD5406NG DPAK (Pb−Free) 75 Units / Rail NTD5406NT4G DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. 2 1 Publication Order Number: NTD5406N/D NTD5406N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V 42 IDSS VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 100°C 10 IGSS VDS = 0 V, VGS = ±30 V VGS(TH) VGS = VDS, ID = 250 A ±100 A nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 1.5 3.5 −7.0 RDS(on) gFS V mV/°C VGS = 10 V, ID = 30 A 8.7 10 VGS = 5.0 V, ID = 10 A 13.2 17 VGS = 10 V, ID = 10 A 19 m S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1375 2500 VGS = 0 V, f = 1.0 MHz, VDS = 32 V 370 700 160 300 VGS = 10 V, VDS = 32 V, ID = 30 A Total Gate Charge QG(TOT) 45 Threshold Gate Charge QG(TH) 2.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD pF nC 5.4 20 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 7.2 VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 tf 57 30 67 SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) ns 15 VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5 tf 147 20 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.82 TJ = 125°C 0.67 tRR ta tb 46 VGS = 0 V, dISD/dt = 100 A/s, IS = 10 A QRR http://onsemi.com 2 V ns 24 22 65 2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.1 nC NTD5406N TYPICAL PERFORMANCE CURVES VGS = 7 V to 10 V 80 TJ = 25°C 70 6V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 80 5V 60 4.8 V 50 4.6 V 40 4.4 V 30 4.2 V 20 4V 10 3.8 V 3.6 V 0 0 2 1 3 5 4 6 8 7 9 VDS ≥ 10 V 70 60 50 40 30 TJ = 100°C 20 TJ = 25°C 10 TJ = −55°C 0 10 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4 3 5 1 2 6 7 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.03 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 0.025 0.02 0.015 0.01 0.005 3 5 4 7 6 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics 0.020 0.016 VGS = 5 V 0.014 0.012 0.010 VGS = 10 V 0.008 0.006 0.004 10 20 30 10000 ID = 10 A VGS = 10 V 1.4 1.2 1 VGS = 0 V 1000 TJ = 175°C 100 10 TJ = 100°C 0.8 −25 0 25 50 75 100 125 150 60 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 0.6 −50 50 40 ID, DRAIN CURRENT (AMPS) IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 TJ = 25°C 0.018 Figure 3. On−Resistance vs. Gate−to−Source Voltage 2 8 175 1 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTD5406N TYPICAL PERFORMANCE CURVES TJ = 25°C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 3000 VDS = 0 V VGS = 0 V Ciss 2400 Crss 1800 Ciss 1200 Coss 600 0 10 Crss 0 5 5 VGS VDS 10 15 20 25 30 35 40 12 36 QT 9 QGS 0 1000 9 ID = 30 A TJ = 25°C 0 20 40 10 30 QG, TOTAL GATE CHARGE (nC) IS, SOURCE CURRENT (AMPS) t, TIME (ns) td(off) 10 1 td(on) 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 25 20 15 10 5 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0 50 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 30 tf tr 18 3 Figure 7. Capacitance Variation 100 VGS QGD GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) VDS = 32 V ID = 30 A VGS = 10 V 27 VDS 6 0.5 0.7 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3600 1 NTD5406N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE B SEATING PLANE −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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