Luguang LL103C Small signal schottky diode Datasheet

LL103A-LL103C
Small Signal Schottky Diodes
VOLTAGE RANGE: 40 -- 20 V
CURRENT: 400 mW
Features
For general purpose applications
MINI-MELF
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
Cathode indification
drop and fast switching make it ideal for protection of
φ1 .5±0.1
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
0.4±0.1
3.4
Case:JEDEC MINI-MELF
+0.3
-0.1
Polarity: Color band denotes cathode end
Weight: Approx. 0.031 gram
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
LL103A
LL103B
LL103C
UNITS
Peak reverse voltage
VRRM
40
30
20
V
Pow er dissipation (Infinite Heat Sink)
Ptot
4001)
Single cycle surge 60Hz sine w ave
I FSM
15
A
Forward continuous current
I(AV)
200
mA
Junction tenperature
TJ
125
TSTG
-55 ---+ 150
Storage temperature range
mW
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherw ise specified)
Reverse breakdow n voltage
@ IR=50 A LL103A
LL103B
LL103C
Leakage current
@ VR=50V
LL103A,VR=30V
LL103B,VR=20V
LL103C,VR=10V
Forw ard voltage drop @ I F=20mA
I F=200mA
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ IF=IR=50mA to 200mA,recover to 0.1 IR
Thermal resistance junction to ambient air
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Symbols
Min.
Typ.
Max.
UNITS
VR
40
30
20
-
-
V
IR
-
-
5.0
μA
VF
-
-
CJ
trr
-
50
10
0.37
0.6
-
RθJA
-
250
-
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V
pF
ns
K/W
LL103A-LL103C
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD.
XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE
XXXXXXXX-SCHOTTKY BARRIER
FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF
XXXXX COMBINATION SCHOTTKY BARRIER AND PN
XXXXX JUNCTION GUARD RING
5
1000
1000.000
– Forward Current (A)
4
10
10.000
1
1.000
2
F
0.100
0.1
3
1
I
I F – Forward Current ( mA)
100
100.000
0.010
0.01
0
0.0
0.001
0
0.5
100 200 300 400 500 600 700 800 900 1000
V F – Forward Voltage ( mV )
FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT
XXXXXXXXX
VARIATION TEMPERATURES
1.5
2.0
FIG.4 -- TYPICAL CAPACITANCE CURVE AS A
JUNCTION OF REVERSE VOLTAGE
10000
30
CD – Diode Capacitance ( pF )
I R – Reverse Current (A )
1.0
V F – Forward Voltage ( V )
1000
100
10
1
f=1MHz
25
20
15
10
5
0
0
20
40 60 80 100 120 140 160
Tj – Junction Temperature ( °C )
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0
5
10
15
20
25
V R – Reverse Voltage ( V )
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30
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