BY296 THRU BY299S HD ZC55 DO-27 Plastic-Encapsulate Diodes Fast Recovery Rectifier Features ●Io 2.0A DO-2 7 ●VRRM 100V-1000V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● BY29X X:From 6 to 9S BY Item Symbol Unit Repetitive Peak Reverse Voltage VRRM Maximum RMS Voltage Conditions 296 297 298 299 299S V 100 200 400 800 1000 VRMS V 70 140 280 560 700 Average Forward Current IF(AV) A 60Hz Half-sine wave, Resistance load, Ta=50℃ Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ TJ ℃ -55~+125 TSTG ℃ -55~+150 Junction Temperature Storage Temperature 2 70 Electrical Characteristics (Ta=25℃ Unless otherwise specified) BY Item Peak Forward Voltage Peak Reverse Current Reverse Recovery time Thermal Resistance(Typical) Symbol Unit VFM V IRRM1 IRRM2 trr μA ns RθJ-A Test Condition 296 297 IFM=2.0A 298 299S 1.3 Ta=25℃ 5 Ta=125℃ IF=0.5A IR=1A IRR=0.25A 50 VRM=VRRM 299 150 250 Between junction and ambient 25 Between junction and lead 20 ℃/W RθJ-L High Diode Semiconductor 1 FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1: FORWARD CURRENT DERATING CURVE IFSM(A) IO(A) Typical Characteristics 2.0 70 56 1.5 8.3ms Single Half Sine Wave JEDEC Method 42 1.0 28 0.5 14 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length 0 0 50 150 Ta(℃) 100 1 2 10 20 100 Number of Cycles FIG.4: TYPICAL REVERSE CHARACTERISTICS IR(uA) FIG.3: TYPICAL FORWARD CHARACTERISTICS IF(A) 20 1000 10 100 4.0 Tj=125℃ 2.0 10 1.0 0.4 Tj=100℃ 1.0 0.2 0.1 Tj=25℃ TJ=25 ℃ Pulse width=300us 1% Duty Cycle 0.1 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0 1.8 20 40 60 80 100 Voltage(%) VF(V) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D t rr IF VR IF RL t 0 I RR IR High Diode Semiconductor 2 .052(1.30) .048(1.20) .197(5.00) 1.0(25.4) MIN .220(5.60) 1.0(25.4) MIN .335(8.50) .375(9.50) DO-27 Unit: in inches (millimeters) JSHD JSHD High Diode Semiconductor 3 Ammo Box Packaging Specifications For Axial Lead Rectifiers High Diode Semiconductor 4