LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). • 1 2 SOT-23 We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR R1 zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) 1 BASE R zAbsolute maximum ratings (Ta=25°C) Parameter R=10kΩ Symbol Limits Unit Collector-base voltage VCBO -60 ±10 V Collector-emitter voltage VCEO -60 ±10 V Emitter-base voltage VEBO -5 V IC -1 A Collector current ICP ∗1 -2 A 0.5 W Collector power dissipation PC Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗2 2 2 EMITTER ∗1 Pw≤10ms, Duty cycle≤1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTBG12GPLT1G Q8 1 22 3000/Tape & Reel LDTBG12GPLT3G Q8 1 22 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -50 − -70 V IC=-50µA Collector-emitter breakdown voltage BVCEO -50 − -70 V IC=-1mA Emitter-base breakdown voltage BVEBO -5 − − V IE=-720µA Parameter Conditions Collector cutoff current ICBO − − -0.5 µA VCB=-40V Emitter cutoff current IEBO -300 − -580 µA VEB=-4V VCE(sat) − − -0.4 V IC/IB=-500mA/-5mA DC current transfer ratio hFE 300 − − − VCE=-2V, I C=-500mA Emitter-base resistance R 7 10 13 kΩ Transition frequency fT − 80 − MHz Collector-emitter saturation voltage ∗ − VCE=-5V, IE=−-0.1A, f=-30MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTBG12GPLT1G zElectrical characteristic curves 10 10k ICP 2 PW 1 PW 500m 200m =1 0 m =1 s∗ 00 m DC 100m s∗ 50m 20m 10m 5m 14W×18l×0.8t(Unit : mm) When mounted on glass epoxy 2m ∗Single pulse 1m 100m 200m 500m 1 2 5 10 2k 1k 500 200 100 20 20 50 100 10 10m 20m 50m 100m200m500m 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 5 10 COLLECTOR CURRENT : IC (A) Fig.2 Safe operating area 10 VCE=5V 2V 1V 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ta=25°C 5k DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 5 DC current gain vs. collector current Ta=25°C 5 2 1 500m 200m 100m IC/IB=200 100 50 50m 20m 10m 10m 20m 50m 100m 200m 500m 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTBG12GPLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3