MA700, MA700A SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES Max. 0.5 Max. 0.45 for ordinary wave detection for super high speed switching Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band Black Part No. Features XXX Min. 27.5 Max. 1.9 Max. 2.9 XXX Max. 3.9 ST • Low forward rise voltage (VF) and satisfactory wave • detection efficiency (η) Min. 27.5 Min. 27.5 • Small temperature coefficient of forward characteristic • Extremely low reverse current (IR) Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Glass Case DO-35 Dimensions in mm Symbol Value Unit Peak Reverse Voltage MA700 MA700A VRM 15 30 V Reverse Voltage MA700 MA700A VR 15 30 V Forward Current IF 30 mA Peak Forward Current IFM 150 mA Junction Temperature Tj 125 O Storage Temperature Range TS - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit VF - 0.4 1 V IR - 600 600 nA Terminal Capacitance at VR = 1 V, f = 1 MHz CT 1.3 - pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr 1 - ns Detection Efficiency at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 KΩ, CL = 10 pF η 60 - % Forward Voltage at IF = 1 mA at IF = 30 mA Reverse Current at VR = 15 V at VR = 30 V MA700 MA700A SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/08/2007