Kersemi BCR3KM-12LA Planar passivation type Datasheet

BCR3KM-12LA
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
IT (RMS) : 3 A
VDRM : 600 V
IFGTI , IRGTI, IRGTⅢ : 20 mA (10 mA)Note5
Viso : 2000 V
Outline
TO-220FN
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general controlling
devices
Maximum Ratings
Parameter
Symbol
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
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Voltage class
12
600
720
Unit
V
V
BCR3KM-12LA
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
3
Unit
A
Surge on-state current
ITSM
30
A
I2 t
3.7
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 109°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Note2
Gate trigger voltage
Note2
Gate trigger current
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
(dv/dt)c
—
—
—
—
—
—
0.2
—
5
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
Note5
20
Note5
20
Note5
20
—
4.0
—
V
V
V
mA
mA
mA
V
°C/W
V/µs
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage
Tj = 125°C, VD = 1/2 VDRM
Note3
Thermal resistance
Junction to case
Critical-rate of rise of off-state
Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Commutating voltage and current waveforms
(inductive load)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
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Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR3KM-12LA
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
Surge On-State Current (A)
40
101
7
5
3
2
0
10
7
5
3
2
Gate Voltage (V)
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
IGM =
0.5A
VGT
0
IRGT I
IFGT I, IRGT III
10
103
7
5
0
15
10
5
2 3
5 7 10
1
2 3
5 7 10
Gate Trigger Current vs.
Junction Temperature
PGM = 3W
PG(AV) = 0.3W
–1
20
Gate Characteristics (I, II and III)
1
10
25
Conduction Time (Cycles at 60Hz)
2
10
7
5
3
2
30
On-State Voltage (V)
10
7
5
3
2
10
7
5
3
2
35
0 0
10
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
2 3 5 710
1
2 3 5 710
VGD = 0.2V
2
2 3 5 710
3
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
–1
103
7
5
2
Typical Example
IRGT III
3
2
102
7
5
IFGT I, IRGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
3
2
2
10
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140
Transient Thermal Impedance (°C/W)
On-State Current (A)
2
10
7 Tj = 25°C
5
3
2
Junction Temperature (°C)
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10
5.0
2
2 3 5 7103 2 3 5 7
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
Conduction Time (Cycles at 60Hz)
BCR3KM-12LA
Maximum On-State Power Dissipation
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
No Fins
On-State Power Dissipation (W)
3
5.0
4.5
4.0
360° Conduction
3.5 Resistive,
3.0 inductive loads
2.5
2.0
1.5
1.0
0.5
0
0
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
140
120 × 120 × t2.3
100 × 100 × t2.3
120
60 × 60 × t2.3
120
100 Curves apply regardless
of conduction angle
80
60
40
360° Conduction
20 Resistive,
100
80
60 All fins are black painted
aluminum and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
inductive loads
0
0
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Natural convection
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
RMS On-State Current (A)
160
Ambient Temperature (°C)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Conduction Time (Cycles at 60Hz)
Ambient Temperature (°C)
Case Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
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105
7
5
3
2
Typical Example
104
7
5
3
2
3
10
7
5
3
2
102
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR3KM-12LA
103
7
5
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
120
101
7
5
3
+ +
2 T2–, G– Typical Example
T2 , G
100
–60 –40–20 0 20 40 60 80 100 120 140
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
Minimum
3 Characteristics
Value
2
0
10
7
5
3
2
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
140
10
7 0
10
T2+, G–
Typical Example
2
Breakover Voltage vs.
Junction Temperature
Typical Example
3
2
Distribution
Junction Temperature (°C)
160
7
5
103
7
5
3
2
Junction Temperature (°C)
I Quadrant
2 3
5 7 101
2 3
5 7 102
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
Rate of Decay of On-State
Commutating Current (A/ms)
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3
10
7
5
Typical Example
IRGT III
IRGT I
3
2
IFGT I
102
7
5
3
2
101 0
10
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (µs)
BCR3KM-12LA
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
A
6V
330Ω
V
V
330Ω
Test Procedure II
Test Procedure I
6Ω
A
6V
V
330Ω
Test Procedure III
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BCR3KM-12LA
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
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Standard order
code example
BCR3KM-12LA
BCR3KM-12LA-A8
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