HAT2188WP Silicon N Channel Power MOS FET Power Switching REJ03G0534-0500 Rev.5.00 Mar.24.2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G 4 3 2 1 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.5.00, Mar.24.2005, page 1 of 3 Symbol VDSS VGSS ID ID (pulse)Note1 IDR Ratings 200 ±30 12 24 12 Unit V V A A A IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 24 12 9.6 25 5 150 –55 to +150 A A mJ W °C/W °C °C HAT2188WP Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Notes: 4. Pulse test Rev.5.00, Mar.24.2005, page 2 of 3 Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Min 200 — — 3.0 5 — Typ — — — — 9 0.135 Max — 1 ±0.1 4.5 — 0.157 Unit V µA µA V S Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 710 140 11 26 27 54 7 15 4 6 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.85 110 1.4 — V ns Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 6 A, VDS = 10 V Note4 ID = 6 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 16.7 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 12 A IF = 12 A, VGS = 0 Note4 IF = 12 A, VGS = 0 diF/dt = 100 A/µs HAT2188WP Package Dimensions RENESAS Code Package Name MASS[Typ.] PWSN0008DA-A WPAK 0.085g Unit: mm 0.5 ± 0.15 JEITA Package Code 0.8Max 5.1 ± 0.2 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Ordering Information Part Name HAT2188WP-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00, Mar.24.2005, page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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