MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N ● IC ................................................................ 1800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate ● Trench Gate IGBT : CSTBT™ ● Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130±0.5 57±0.25 4 - M8 NUTS 57±0.25 4(C) 2(C) 3(E) 1(E) C 3 140±0.5 124±0.25 40±0.2 2 20±0.1 4 G E 1 C E CIRCUIT DIAGRAM G 10.35±0.2 3 - M4 NUTS 10.65±0.2 6 - φ 7 MOUNTING HOLES 48.8±0.2 +1 28 –0 38 +1 –0 18±0.2 5±0.2 screwing depth min. 7.7 screwing depth min. 16.5 15±0.2 40±0.2 5.2±0.2 LABEL 29.5±0.5 61.5±0.3 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse (Note 1) Pulse TC = 25°C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C Ratings Unit 1700 ±20 1800 3600 1800 3600 10000 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 V V A A A A W °C °C °C V 10 µs ELECTRICAL CHARACTERISTICS Symbol Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VEC (Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy ICES VGE(th) IGES VCE(sat) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25°C Min — Limits Typ — Max 6 IC = 180mA, VCE = 10V, Tj = 25°C 6.0 7.0 8.0 V — — — — — — — — — — — — — — — — — — — — 2.15 2.40 264 14.4 4.2 10.2 2.60 2.30 1.00 0.40 550 1.20 0.30 560 1.00 720 420 280 0.5 2.80 — — — — — 3.30 — — — — — — — — — — — µA Item Conditions VGE = VGES, VCE = 0V, Tj = 25°C IC = 1800A, VGE = 15V, Tj = 25°C IC = 1800A, VGE = 15V, Tj = 125°C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C IE = 1800A, VGE = 0V, Tj = 25°C (Note 4) IE = 1800A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = ±15V RG(off) = 2.2Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH Inductive load Unit mA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 11.0 Max 12.5 28.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque — CTI da ds LC-E(int) RC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part TC = 25°C Min 7.0 3.0 1.0 — 600 19.5 32.0 — — Limits Typ — — — 0.8 — — — 16 0.14 Max 20.0 6.0 3.0 — — — — — — Unit N·m kg — mm mm nH mΩ HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 3600 3600 Tj = 125°C 3000 3000 VGE = 12V VGE = 20V COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VCE = 20V VGE = 15V 2400 VGE = 10V 1800 1200 2400 1800 1200 600 600 VGE = 8V 0 0 1 2 3 4 Tj = 25°C Tj = 125°C 5 0 6 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 12 5 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 4 3 2 1 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 600 1200 1800 2400 3000 3600 COLLECTOR CURRENT (A) Tj = 25°C Tj = 125°C 0 0 600 1200 1800 2400 3000 3600 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VCC = 850V, IC = 1800A Tj = 25°C 7 5 GATE-EMITTER VOLTAGE (V) Cies 3 102 7 5 3 2 Coes 101 7 5 Cres 3 2 100 -1 10 2000 SWITCHING ENERGIES (mJ/pulse) 16 12 8 4 VGE = 0V, Tj = 25°C f = 100kHz 5 7 100 2 3 2 3 5 7 101 0 5 7 102 2 3 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1600 Eoff 1200 14 3000 VCC = 850V, VGE = ±15V RG(on) = 0.9Ω, RG(off) = 2.2Ω Tj = 125°C, Inductive load 800 Eon 400 Erec SWITCHING ENERGIES (mJ/pulse) CAPACITANCE (nF) 2 VCC = 850V, IC = 1800A, VGE = ±15V Tj = 125°C, Inductive load 2500 Eon 2000 1500 Eoff 1000 500 Erec 0 0 600 1200 1800 2400 3000 3600 COLLECTOR CURRENT (A) 0 0 2 4 6 8 10 12 GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 7 5 600 VCC = 850V, VGE = ±15V RG(on) = 0.9Ω, RG(off) = 2.2Ω Tj = 125°C, Inductive load REVERSE RECOVERY CHARGE (µC) 101 3 SWITCHING TIMES (µs) 2 td(off) 100 7 5 tr td(on) tf 3 2 10-1 7 5 3 VCC = 850V, VGE = ±15V RG(on) = 0.9Ω Tj = 125°C, Inductive load 500 Qrr 400 300 200 100 2 2 3 5 7 103 2 3 5 0 7 104 600 1200 1800 2400 3000 3600 EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1.2 1.0 0 COLLECTOR CURRENT (A) 5000 VCC ≤ 1200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 2.2Ω Single Pulse, TC = 25°C Rth(j–c)Q = 12.5K/kW Rth(j–c)R = 28K/kW 4000 COLLECTOR CURRENT (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE 10-2 2 10 0.8 0.6 0.4 3000 2000 1000 0.2 Module Chip 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005