Mitsubishi CM1800HC-34N High power switching use insulated type Datasheet

MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM1800HC-34N
● IC ................................................................ 1800A
● VCES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT™
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130±0.5
57±0.25
4 - M8 NUTS
57±0.25
4(C)
2(C)
3(E)
1(E)
C
3
140±0.5
124±0.25
40±0.2
2
20±0.1
4
G
E
1
C
E
CIRCUIT DIAGRAM
G
10.35±0.2
3 - M4 NUTS
10.65±0.2
6 - φ 7 MOUNTING HOLES
48.8±0.2
+1
28 –0
38 +1
–0
18±0.2
5±0.2
screwing depth
min. 7.7
screwing depth
min. 16.5
15±0.2
40±0.2
5.2±0.2
LABEL
29.5±0.5
61.5±0.3
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 75°C
Pulse
(Note 1)
Pulse
TC = 25°C, IGBT part
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1200V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
Ratings
Unit
1700
±20
1800
3600
1800
3600
10000
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
V
V
A
A
A
A
W
°C
°C
°C
V
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Cies
Coes
Cres
Qg
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VEC (Note 2)
Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Irr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
ICES
VGE(th)
IGES
VCE(sat)
Note 1.
2.
3.
4.
VCE = VCES, VGE = 0V, Tj = 25°C
Min
—
Limits
Typ
—
Max
6
IC = 180mA, VCE = 10V, Tj = 25°C
6.0
7.0
8.0
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.15
2.40
264
14.4
4.2
10.2
2.60
2.30
1.00
0.40
550
1.20
0.30
560
1.00
720
420
280
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
µA
Item
Conditions
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1800A, VGE = 15V, Tj = 25°C
IC = 1800A, VGE = 15V, Tj = 125°C
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C
IE = 1800A, VGE = 0V, Tj = 25°C
(Note 4)
IE = 1800A, VGE = 0V, Tj = 125°C
(Note 4)
VCC = 850V, IC = 1800A, VGE = ±15V
RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1800A, VGE = ±15V
RG(off) = 2.2Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1800A, VGE = ±15V
RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH
Inductive load
Unit
mA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
A
µC
mJ/pulse
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Min
—
—
—
Limits
Typ
—
—
11.0
Max
12.5
28.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M
Mounting torque
—
CTI
da
ds
LC-E(int)
RC-E(int)
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
Limits
Typ
—
—
—
0.8
—
—
—
16
0.14
Max
20.0
6.0
3.0
—
—
—
—
—
—
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
3600
3600
Tj = 125°C
3000
3000
VGE = 12V
VGE = 20V
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
VCE = 20V
VGE = 15V
2400
VGE = 10V
1800
1200
2400
1800
1200
600
600
VGE = 8V
0
0
1
2
3
4
Tj = 25°C
Tj = 125°C
5
0
6
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
12
5
VGE = 15V
EMITTER-COLLECTOR VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
4
3
2
1
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
600
1200
1800
2400
3000
3600
COLLECTOR CURRENT (A)
Tj = 25°C
Tj = 125°C
0
0
600
1200
1800
2400
3000
3600
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
20
VCC = 850V, IC = 1800A
Tj = 25°C
7
5
GATE-EMITTER VOLTAGE (V)
Cies
3
102
7
5
3
2
Coes
101
7
5
Cres
3
2
100 -1
10
2000
SWITCHING ENERGIES (mJ/pulse)
16
12
8
4
VGE = 0V, Tj = 25°C
f = 100kHz
5 7 100
2 3
2 3
5 7 101
0
5 7 102
2 3
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
1600
Eoff
1200
14
3000
VCC = 850V, VGE = ±15V
RG(on) = 0.9Ω, RG(off) = 2.2Ω
Tj = 125°C, Inductive load
800
Eon
400
Erec
SWITCHING ENERGIES (mJ/pulse)
CAPACITANCE (nF)
2
VCC = 850V, IC = 1800A,
VGE = ±15V
Tj = 125°C, Inductive load
2500
Eon
2000
1500
Eoff
1000
500
Erec
0
0
600
1200
1800
2400
3000
3600
COLLECTOR CURRENT (A)
0
0
2
4
6
8
10
12
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
7
5
600
VCC = 850V, VGE = ±15V
RG(on) = 0.9Ω, RG(off) = 2.2Ω
Tj = 125°C, Inductive load
REVERSE RECOVERY CHARGE (µC)
101
3
SWITCHING TIMES (µs)
2
td(off)
100
7
5
tr
td(on)
tf
3
2
10-1
7
5
3
VCC = 850V, VGE = ±15V
RG(on) = 0.9Ω
Tj = 125°C, Inductive load
500
Qrr
400
300
200
100
2
2
3
5
7 103
2
3
5
0
7 104
600
1200
1800
2400
3000
3600
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
1.2
1.0
0
COLLECTOR CURRENT (A)
5000
VCC ≤ 1200V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 2.2Ω
Single Pulse, TC = 25°C
Rth(j–c)Q = 12.5K/kW
Rth(j–c)R = 28K/kW
4000
COLLECTOR CURRENT (A)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
10-2 2
10
0.8
0.6
0.4
3000
2000
1000
0.2
Module
Chip
0 -3
10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Similar pages