MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. http://onsemi.com Features • • • • High Safe Operating Area High DC Current Gain These Devices are Pb−Free and are RoHS Compliant* Complementary to MJ15023 (PNP), MJ15025 (PNP) 16 AMPERES SILICON POWER TRANSISTORS 200 − 250 VOLTS, 250 WATTS SCHEMATIC MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol MJ15022 MJ15024 MJ15022 MJ15024 VCEO VCBO Value Vdc 200 250 1 BASE Vdc 350 400 2 EMITTER Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage VCEX 400 Vdc IC 16 Adc ICM 30 Adc Base Current − Continuous IB 5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 250 1.43 W W/_C TJ, Tstg −65 to +200 _C Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range CASE 3 Unit 3 1 TO−204AA (TO−3) CASE 1−07 STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W 2 MARKING DIAGRAM MJ1502xG AYWW MEX MJ1502x = Device Code x = 2 or 4 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping MJ15022G TO−204 (Pb−Free) 100 Units / Tray MJ15024G TO−204 (Pb−Free) 100 Units / Tray *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 12 1 Publication Order Number: MJ15022/D MJ15022 (NPN), MJ15024 (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 200 250 − − − − 250 250 − − 500 500 − 500 5 2 − − 15 5 60 − − − 1.4 4.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0) MJ15022 MJ15024 Collector Cutoff Current (VCE = 200 Vdc, VBE(off) = 1.5 Vdc) (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15022 MJ15024 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 vdc, IB = 0) MJ15022 MJ15024 Emitter Cutoff Current (VCE = 5 Vdc, IB = 0) VCEO(sus) − ICEX mAdc ICEO IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 0.5 s (non−repetitive)) (VCE = 80 Vdc, t = 0.5 s (non−repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Base−Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VBE(on) − 2.2 Vdc fT 4 − MHz Cob − 500 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values Ion than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) 100 50 TC = 25°C 20 10 5.0 BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1.0 0.2 0.1 0.1 0.2 20 0.5 10 50 100 250 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1k Figure 1. Active−Region Safe Operating Area http://onsemi.com 2 MJ15022 (NPN), MJ15024 (NPN) C, CAPACITANCE (pF) 4000 3000 f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS TJ = 25°C Cib 1000 500 Cob 100 40 0.3 0.5 1 10 30 50 5.0 VR, REVERSE VOLTAGE (VOLTS) 100 300 9 7 6 5 4 3 2 1 0 0.1 TJ = 100°C VCE = 4 V V, VOLTAGE (VOLTS) 20 10 10 1.4 1.0 0.8 5.0 VBE(on) @ VCE = 4 V TJ = 25°C 100°C 0.2 1.0 0.2 5.0 1.8 TJ = 25°C 50 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 100°C 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 0 0.15 20 VCE(sat) @ IC/IB = 10 25°C Figure 4. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 3. Current−Gain — Bandwidth Product Figure 2. Capacitances 200 TJ = 25°C VCE = 10 V fTest = 1 MHz 8 Figure 5. “On” Voltage 1.8 TJ = 25°C 1.4 1.0 16 A 0.6 8A IC = 4 A 0.2 0 0.03 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (AMPS) 10 Figure 6. Collector Saturation Region http://onsemi.com 3 30 10 20 MJ15022 (NPN), MJ15024 (NPN) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C E D −T− U SEATING PLANE K 2 PL 0.13 (0.005) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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