Fairchild FDP120N10 N-channel powertrenchâ® mosfet 100v, 74a, 12mî© Datasheet

FDP120N10
N-Channel
PowerTrench®
100V, 74A, 12mΩ
tm
MOSFET
Features
Description
• RDS(on) = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast Switching Speed
• Low Gate Charge
• High Performance
RDS(on)
Trench Technology for Extremely Low
Application
• DC to DC Convertors / Synchronous Rectification
• High Power and Current Handling Capability
• RoHS Compliant
D
G
G D S
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
±20
V
A
52
(Note 1)
296
A
(Note 2)
198
mJ
5.8
V/ns
(Note 3)
(TC = 25oC)
Units
V
74
- Continuous (TC = 100oC)
- Pulsed
Ratings
100
170
W
1.14
W/oC
-55 to +175
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
0.88
RθCS
Thermal Resistance, Case to Sink, Typ.
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2009 Fairchild Semiconductor Corporation
FDP120N10 Rev. A
1
Units
o
C/W
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FDP120N10 N-Channel PowerTrench® MOSFET
March 2009
Device Marking
FDP120N10
Device
FDP120N10
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
100
-
-
V
-
0.1
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TC = 25oC
ID = 250μA, Referenced to
25oC
VDS = 100V, VGS = 0V
-
-
1
VDS = 100V, VGS = 0V,TC = 150oC
-
-
500
VGS = ±20V, VDS = 0V
-
-
±100
2.5
-
4.5
V
-
9.7
12
mΩ
-
105
-
S
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 74A
VDS = 10V, ID = 74A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 80V ID = 74A
VGS = 10V
(Note 4, 5)
-
4215
5605
pF
-
405
540
pF
-
170
255
pF
-
66
86
nC
-
26
-
nC
-
20
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 50V, ID = 74A
VGS = 10V, RGEN = 4.7Ω
(Note 4, 5)
-
27
64
ns
-
105
220
ns
-
39
88
ns
-
15
40
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
74
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
296
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 74A
-
-
1.3
V
trr
Reverse Recovery Time
-
44
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 74A
dIF/dt = 100A/μs
-
67
-
nC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.11mH, IAS = 60A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 74A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP120N10 Rev. A
2
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FDP120N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
3000
500
100
ID, Drain Current[A]
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1000
ID, Drain Current[A]
Figure 2. Transfer Characteristics
10
100
o
o
-55 C
175 C
o
25 C
10
*Notes:
1. 250μs Pulse Test
1
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
o
0.2
0.1
2. TC = 25 C
1
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
8
VGS, Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
500
0.03
0.02
VGS = 10V
VGS = 20V
0.01
100
o
175 C
*Note: TC = 25 C
0
50
100
150
200
ID, Drain Current [A]
250
*Notes:
1. VGS = 0V
1
0.2
300
Figure 5. Capacitance Characteristics
7000
Ciss
1400
0
0.1
FDP120N10 Rev. A
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
10
VDS, Drain-Source Voltage [V]
1.4
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4200
2800
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
5600
o
25 C
10
o
0.00
9
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.04
RDS(ON) [Ω],
Drain-Source On-Resistance
3
8
6
4
2
0
30
3
VDS = 25V
VDS = 50V
VDS = 80V
*Note: ID =74A
0
20
40
60
Qg, Total Gate Charge [nC]
80
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FDP120N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.8
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 1mA
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
2.4
2.0
1.6
1.2
0.4
-100
200
Figure 9. Maximum Safe Operating Area
*Notes:
1. VGS = 10V
2. ID = 74A
0.8
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
75
1000
100
ID, Drain Current [A]
ID, Drain Current [A]
20μs
100μs
1ms
10ms
DC
10
Operation in This Area
is Limited by R DS(on)
1
*Notes:
50
25
o
0.1
1. TC = 25 C
o
0.01
0.1
2. TJ = 175 C
3. Single Pulse
1
10
VDS, Drain-Source Voltage [V]
0
25
100 200
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.2
0.1
0.1
t1
0.02
0.01
t2
*Notes:
o
0.01
1. ZθJC(t) = 0.88 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.005
-5
10
FDP120N10 Rev. A
PDM
0.05
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FDP120N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP120N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP120N10 Rev. A
5
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FDP120N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lta g e D r o p
FDP120N10 Rev. A
6
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FDP120N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP120N10 Rev. A
7
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Datasheet contains the design specifications for product development. Specifications may change in
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Rev. I40
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