Plastic-Encapsulate Transistors BCP54/55/56(NPN) FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51...BCP53 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol BCP54 BCP55 BCP56 Unit Collector-Base Voltage VCBO 45 60 100 V Collector-Emitter Voltage VCEO 45 60 80 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1000 mA Collector Power Dissipation IC 1.5 W Thermal Resistance Junction to Ambient RθJA 94 ℃/W Storage Temperature Tstg -55 to +150 1. BASE ELECTRICAL CHARACTERISTICS (Tamb=25 2. COLLECTO SOT-223 3. EMITTER unless otherwise specified) Symbol Parameter Test conditions Min Max Unit Collector-base breakdown voltage BCP54 BCP55 BCP56 VCBO IC= 0.1mA,IE=0 45 60 100 V BCP54 BCP55 BCP56 VCEO IC= 10mA,IB=0 45 60 80 V 5 V Collector-emitter breakdown voltage Base-emitter breakdown voltage VEBO IC= 10μA,IE=0 Collector cut-off current ICBO VCB= 30 V, IE=0 hFE(1) VCE= 2V, IC=5mA 25 hFE(2) VCE= 2V, IC=150m A 63 hFE(3) VCE= 2V, IC=500m A 25 VCE(sat) IC=500mA,IB=50mA 0.5 V Base-emitter voltage VBE VCE=2V, IC=500m A 1 V Transition frequency fT DC current gain Collector-emitter saturation voltage CLASSIFICATION OF Rank Range 100 VCE=10V,IC=50mA,f=100MHz nA 250 100 MHz hFE(2) BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16 63-160 GUANGDONG HOTTECH 100-250 INDUSTRIAL CO,. LTD. Page:P3 -P1 Plastic-Encapsulate Transistors BCP54/55/56 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3 -P2 Plastic-Encapsulate Transistors BCP54/55/56 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P3 -P3