HOTTECH BCP56 Plastic-encapsulate transistor Datasheet

Plastic-Encapsulate Transistors
BCP54/55/56(NPN)
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51...BCP53 (PNP)
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
BCP54
BCP55
BCP56
Unit
Collector-Base Voltage
VCBO
45
60
100
V
Collector-Emitter Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
1000
mA
Collector Power Dissipation
IC
1.5
W
Thermal Resistance Junction to Ambient
RθJA
94
℃/W
Storage Temperature
Tstg
-55 to +150
1. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25
2. COLLECTO
SOT-223
3. EMITTER
unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
BCP54
BCP55
BCP56
VCBO
IC= 0.1mA,IE=0
45
60
100
V
BCP54
BCP55
BCP56
VCEO
IC= 10mA,IB=0
45
60
80
V
5
V
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
VEBO
IC= 10μA,IE=0
Collector cut-off current
ICBO
VCB= 30 V, IE=0
hFE(1)
VCE= 2V, IC=5mA
25
hFE(2)
VCE= 2V, IC=150m A
63
hFE(3)
VCE= 2V, IC=500m A
25
VCE(sat)
IC=500mA,IB=50mA
0.5
V
Base-emitter voltage
VBE
VCE=2V, IC=500m A
1
V
Transition frequency
fT
DC current gain
Collector-emitter saturation voltage
CLASSIFICATION OF
Rank
Range
100
VCE=10V,IC=50mA,f=100MHz
nA
250
100
MHz
hFE(2)
BCP54-10, BCP55-10, BCP56-10
BCP54-16, BCP55-16, BCP56-16
63-160
GUANGDONG HOTTECH
100-250
INDUSTRIAL CO,. LTD.
Page:P3 -P1
Plastic-Encapsulate Transistors
BCP54/55/56
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3 -P2
Plastic-Encapsulate Transistors
BCP54/55/56
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3 -P3
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