BVDSS = 60 V RDS(on) typ = 6.3mΩ HRD80N06K / HRU80N06K ID = 114 A 60V N-Channel Trench MOSFET D-PAK FEATURES I-PAK 2 Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.3 mΩ (Typ.) @VGS=10V 1 1 2 3 3 HRD80N06K HRU80N06K 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 60 V Drain Current – Continuous (TC = 25℃) 114 * A Drain Current – Continuous (TC = 100℃) 80 * A IDM Drain Current – Pulsed 400 * A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ EAR Repetitive Avalanche Energy (Note 1) 16 mJ 3 W 160 W ID (Note 1) Power Dissipation (TA = 25℃)* PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 1.07 W/℃ -55 to +175 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 0.9 RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 Units ℃/W * When mounted on the minimum pad size recommended (PCB Mount) ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 6.3 8 mΩ Forward Transconductance VDS = 20, ID = 30 A -- 80 -- S VGS = 0 V, ID = 250 ㎂ 60 -- -- V VDS = 48 V, VGS = 0 V -- -- 1 ㎂ VDS = 48 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ -- 4100 -- ㎊ -- 370 -- ㎊ -- 260 -- ㎊ -- 1.6 -- Ω -- 55 -- ㎱ -- 65 -- ㎱ -- 140 -- ㎱ -- 50 -- ㎱ -- 90 -- nC -- 20 -- nC -- 30 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 30 A, RG = 6 Ω VDS = 48 V, ID = 30 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 114 ISM Pulsed Source-Drain Diode Forward Current -- -- 400 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 70 -- ㎱ Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 100 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=20A, VDD=25V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Electrical Characteristics TJ=25 °C VGS 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V 102 100 ID, Drain Current [A] ID, Drain Current [A] Top : 100 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 101 175oC 10 0.1 101 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 9.5 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 9.0 8.5 8.0 7.5 7.0 6.5 6.0 100 10 175oC 25oC 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 5.5 0 50 100 150 200 0.1 0.0 250 0.4 ID, Drain Current [A] Capacitances [pF] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4000 3000 * Note ; 1. VGS = 0 V 2. f = 1 MHz 2000 Coss Crss 1000 0 10-1 100 1.6 2.0 12 VGS, Gate-Source Voltage [V] Ciss 5000 1.2 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 6000 0.8 VSD, Source-Drain Voltage [V] 10 8 6 4 2 VDS = 48V ID = 30A 101 0 0 20 40 60 80 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Typical Characteristics (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 30 A 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 125 Operation in This Area is Limited by R DS(on) 103 ID, Drain Current [A] 100 1 ms 10 ms DC 1 10 * Notes : 1. TC = 25 oC 100 75 50 25 2. TJ = 175 oC 3. Single Pulse 10-1 10-1 100 0 25 102 101 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZθJC(t), Thermal Response ID, Drain Current [A] 100 µs 102 D=0.5 * Notes : 1. ZθJC(t) = 0.9 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 0.1 -1 10 0.05 0.02 0.01 10-2 10-5 PDM t1 single pulse 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Typical Characteristics HRD80N06K_HRU80N06K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Package Dimension TO-252 (Ass’y GZSM) ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Package Dimension TO-251 (Ass’y GZSM) ◎ SEMIHOW REV.A0,December 2014 HRD80N06K_HRU80N06K Package Dimension TO-251 (Ass’y CLD) ◎ SEMIHOW REV.A0,December 2014