BSZ0994NS MOSFET OptiMOSTMPower-MOSFET,30V TSDSON-8FL (enlarged source interconnection) Features •OptimizedforhighperformanceWirelesscharger •VerylowFOMQOSSforHighFrequencySMPS •LowFOMSWforHighFrequencySMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 7 mΩ ID 13 A QOSS 6.9 nC QG(0V..4.5V) 5.2 nC S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ0994NS PG-TSDSON-8 FL 0994NS - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 13 8.5 A VGS=10V,TA=25°C VGS=4.5V,TA=25°C - 52 A TA=25°C - - 20 A TC=25°C EAS - - 16 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 2.1 W TA=25°C,RthJA=60K/W Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area3) Values Min. Typ. Max. RthJC - - 4.9 K/W - RthJA - - 60 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 30 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7 5 9 7 mΩ VGS=4.5V,ID=5A VGS=10V,ID=5A Gate resistance4) RG 0.5 1.0 2.0 Ω - Transconductance gfs 20 39 - S |VDS|>2|ID|RDS(on)max,ID=9A 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Defined by design. Not subject to production test 2) Final Data Sheet 3 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 890 pF VGS=0V,VDS=15V,f=1MHz 270 360 pF VGS=0V,VDS=15V,f=1MHz - 40 - pF VGS=0V,VDS=15V,f=1MHz td(on) - 2.4 - ns VDD=15V,VGS=10V,ID=5A, RG,ext=1.6Ω Rise time tr - 3.4 - ns VDD=15V,VGS=10V,ID=5A, RG,ext=1.6Ω Turn-off delay time td(off) - 12 - ns VDD=15V,VGS=10V,ID=5A, RG,ext=1.6Ω Fall time tf - 2.4 - ns VDD=15V,VGS=10V,ID=5A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 670 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.6 - nC VDD=15V,ID=5A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.1 - nC VDD=15V,ID=5A,VGS=0to4.5V Gate to drain charge Qgd - 1.6 - nC VDD=15V,ID=5A,VGS=0to4.5V Switching charge Qsw - 2.1 - nC VDD=15V,ID=5A,VGS=0to4.5V Gate charge total Qg - 5.2 7 nC VDD=15V,ID=5A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=15V,ID=5A,VGS=0to4.5V Gate charge total Qg - 10 14 nC VDD=15V,ID=5A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 4.2 - nC VDS=0.1V,VGS=0to4.5V Qoss - 6.9 9.2 nC VDD=15V,VGS=0V Unit Note/TestCondition 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 2 A TA=25°C Diode pulse current IS,pulse - - 56 A TA=25°C Diode forward voltage VSD - 0.76 1.1 V VGS=0V,IF=2A,Tj=25°C Reverse recovery charge Qrr - 10 - nC VR=15V,IF=IS,diF/dt=400A/µs 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 2.5 15 2.0 10 ID[A] Ptot[W] 1.5 1.0 5 0.5 0.0 0 40 80 120 0 160 0 40 80 TA[°C] 120 160 TA[°C] Ptot=f(TA) ID=f(TA);parameter:VGS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 102 10 1 µs 10 µs 0.5 100 µs 1 10 101 1 ms 0.2 10 ms 0.1 ZthJA[K/W] 100 ID[A] DC 10-1 100 0.05 0.02 0.01 single pulse 10-1 -2 10 10-3 10-1 100 101 102 10-2 10-6 10-5 10-4 10-3 VDS[V] 10-1 100 101 102 103 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJA=f(tp);parameter:D=tp/T 5 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 16 10 V 5 V 4.5 V 4V 120 12 80 RDS(on)[mΩ] ID[A] 3.2 V 3.5 V 3.5 V 8 4V 4.5 V 5V 7V 8V 10 V 3.2 V 40 4 3V 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 120 100 120 gfs[S] ID[A] 80 80 60 40 40 20 150 °C 0 0 1 2 25 °C 3 4 5 0 0 10 VGS[V] 30 40 50 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 6 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 10 2.5 8 2.0 1.5 typ VGS(th)[V] RDS(on)[mΩ] 6 4 2 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=5A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 103 102 IF[A] C[pF] Ciss Coss 102 101 Crss 101 0 5 10 15 20 25 30 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 7 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V VGS[V] IAV[A] 8 25 °C 101 100 °C 6 125 °C 4 2 100 100 101 102 103 0 0 2 tAV[µs] 4 6 8 10 12 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=5Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS 5PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 9 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSZ0994NS RevisionHistory BSZ0994NS Revision:2016-07-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-07-11 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2016-07-11