Analogic AAT7357 20v p-channel power mosfet Datasheet

AAT7357
20V P-Channel Power MOSFET
General Description
Features
The AAT7357 is a low threshold dual P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving,
small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint
has been squeezed into the footprint of a
TSOPJW-8 package.
•
•
•
Drain-Source Voltage (max): -20V
Contiunous Drain Current1 (max) = -5A @ 25°C
Low On-Resistance:
— 39mΩ @ VGS = -4.5V
— 63mΩ @ VGS = -2.5V
Dual TSOPJW-8 Package
Applications
•
•
•
D1
D1
D2
D2
8
7
6
5
1
S1
2
G1
3
S2
4
G2
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Absolute Maximum Ratings
Top View
TA = 25°C, unless otherwise noted.
Symbol
VDS
VGS
Description
ID
Continuous Drain Current @ TJ = 150°C1
IDM
IS
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
PD
Maximum Power Dissipation1
TJ
TSTG
Value
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature Range
Storage Temperature Range
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Units
-20
±12
±5
±4
±12
-1.3
1.6
1.0
-55 to 150
-55 to 150
°C
°C
V
A
W
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
Description
Typ
Max
Units
Junction-to-Ambient Steady State, One FET On
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
115
64
60
140
78
72
°C/W
°C/W
°C/W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
7357.2005.04.1.0
1
AAT7357
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
Conditions
Min Typ Max Units
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA
-20
V
=
-4.5V,
I
=
-5A
GS
D
RDS(ON) Drain-Source On-Resistance1
VGS = -2.5V, ID = -4A
ID(ON)
On-State Drain Current1
VGS = -4.5V, VDS = -5V (pulsed)
-12
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = -250µA
-0.6
IGSS
Gate-Body Leakage Current
VGS = ±12V, VDS = 0V
VGS = 0V, VDS = -20V
IDSS
Drain-Source Leakage Current
VGS = 0V, VDS = -16V, TJ = 70°C2
1
gfs
Forward Transconductance
VDS = -5V, ID = -5A
Dynamic Characteristics2
QG
Total Gate Charge
VDS = -10V, RD = 2.0Ω, VGS = -4.5V
QGS
Gate-Source Charge
VDS = -10V, RD = 2.0Ω, VGS = -4.5V
QGD
Gate-Drain Charge
VDS = -10V, RD = 2.0Ω, VGS = -4.5V
tD(ON)
Turn-On Delay
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
tR
Turn-On Rise Time
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
tD(OFF)
Turn-Off Delay
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
tF
Turn-Off Fall Time
VDS = -10V, RD = 2.0Ω, VGS = -4.5V, RG = 6Ω
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage1
VGS = 0, IS = -5A
3
IS
Continuous Diode Current
V
30
49
39
63
±100
-1
-5
12
mΩ
A
V
nA
µA
S
14
3.5
5.6
12
20
33
40
nC
ns
-1.2
-1.3
V
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
7357.2005.04.1.0
AAT7357
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Output Characteristics
Transfer Characteristics
12
12
4V through 10V
3.5V
8
ID (A)
IDS (A)
25°C
8
2V
3V
4
VD = VG
10
6
4
2.5V
1.5V
125°C
2
-55°C
0
0
0
0.5
1
1.5
VDS (V)
0
2
On-Resistance vs. Gate to Source Voltage
0.08
0.08
0.06
0.06
RDS(ON) (mΩ)
VGS = 2.5 V
0.04
VGS = 4.5 V
0.02
0.04
0.02
0
0
0
5
10
15
0
20
1
2
3
4
0.5
VGS = 4.5V
ID = 4.5A
VGS(th) Variance (V)
1.6
6
7
8
9
10
Threshold Voltage
On-Resistance vs. Junction Temperature
1.8
5
VGS (V)
ID (A)
Normalized RDS(ON)
4
3
VGS (V)
On-Resistance vs. Drain Current
RDS(ON) (Ω)
2
1
1.4
1.2
1.0
0.8
ID = 250µA
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
0.6
-50
-25
0
25
50
TJ (°C)
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75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ (°C)
3
AAT7357
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Source-Drain Diode Forward Voltage
Single Pulse Power, Junction to Ambient
40
100
35
30
TJ = 25°C
TJ = 150°C
1
Power (W)
IS (A)
10
25
20
15
10
5
0.1
0
0
0 .2
0.4
0 .6
0.8
1
1.00E-03 1.00E-02 1.00E-01 1.00E+01 1.00E+01 1.00E+02 1.00E+03
1.2
VSD (V)
Time (s)
Normalized Effective
Transient Thermal Impedance
Transient Thermal Response, Junction to Ambient
10
1
.5
0.1
0.01
.2
.1
.02
.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
4
7357.2005.04.1.0
AAT7357
20V P-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)2
TSOPJW-8
NBXYY
AAT7357ITS-T1
Package Information
TSOPJW-8
2.85 ± 0.20
2.40 ± 0.10
0.325 ± 0.075
0.65 BSC 0.65 BSC 0.65 BSC
7°
0.055 ± 0.045
0.04 REF
0.15 ± 0.05
1.0175 ± 0.0925
0.9625 ± 0.0375
3.025 ± 0.075
0.010
0.45 ± 0.15
2.75 ± 0.25
All dimensions in millimeters.
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
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AAT7357
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6
7357.2005.04.1.0
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