Renesas HA16116 Switching regulator for chopper type dc/dc converter Datasheet

HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Switching Regulator for Chopper Type DC/DC Converter
REJ03F0055-0200Z
(Previous: ADE-204-020A)
Rev.2.0
Sep.18.2003
Description
The HA16114P/FP/FPJ and HA16120FP/FPJ are single-channel PWM switching regulator controller ICs
suitable for chopper-type DC/DC converters. Integrated totem-pole output circuits enable these ICs to
drive the gate of a power MOSFET directly. The output logic of the HA16120 is designed to control a
DC/DC step-up (boost) converter using an N-channel power MOS FET. The output logic of the HA16114
is designed to control a DC/DC step-down (buck) converter or inverting converter using a P-channel power
MOS FET.
These ICs can operate synchronously with external pulse, a feature that makes them ideal for power
supplies that use a primary-control AC/DC converter to convert commercial AC power to DC, then use one
or more DC/DC converters on the secondary side to obtain multiple DC outputs. Synchronization is with
the falling edge of the ‘sync’ pulse, which can be the secondary output pulse from a flyback transformer.
Synchronization eliminates the beat interference that can arise from different operating frequencies of the
AC/DC and DC/DC converters, and reduces harmonic noise. Synchronization with an AC/DC converter
using a forward transformer is also possible, by inverting the ‘sync’ pulse.
Overcurrent protection features include a pulse-by-pulse current limiter that can reduce the width of
individual PWM pulses, and an intermittent operating mode controlled by an on-off timer. Unlike the
conventional latched shutdown function, the intermittent operating function turns the IC on and off at
controlled intervals when pulse-by-pulse current limiting continues for a programmable time. This results
in sharp vertical settling characteristics. Output recovers automatically when the overcurrent condition
subsides.
Using these ICs, a compact, highly efficient DC/DC converter can be designed easily, with a reduced
number of external components.
Functions
• 2.5 V voltage reference
• Sawtooth oscillator (Triangle wave)
• Overcurrent detection
• External synchronous input
• Totem-pole output
• Undervoltage lockout (UVL)
• Error amplifier
• Vref overvoltage protection (OVP)
Rev.2.0, Sep.18.2003, page 1 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Features
• Wide supply voltage range: 3.9 V to 40 V*
• Maximum operating frequency: 600 kHz
• Able to drive a power MOS FET (±1 A maximum peak current) by the built-in totem-pole gate predriver circuit
• Can operate in synchronization with an external pulse signal, or with another controller IC
• Pulse-by-pulse overcurrent limiting (OCL)
• Intermittent operation under continuous overcurrent
• Low quiescent current drain when shut off by grounding the ON/OFF pin
HA16114: IOFF = 10 µA (max)
HA16120: IOFF = 150 µA (max)
• Externally trimmable reference voltage (Vref): ±0.2 V
• Externally adjustable undervoltage lockout points (with respect to VIN)
• Stable oscillator frequency
• Soft start and quick shut function
Note: The reference voltage 2.5 V is under the condition of VIN ≥ 4.5 V.
Ordering Information
Hitachi Control ICs for Chopper-Type DC/DC Converters
Product
Channel
Channels
Number
No.
Step-Up
Step-Down
Dual
HA17451
Ch 1
❍
Ch 2
Single
HA16114
HA16120
Dual
Control Functions
Overcurrent
Inverting
Output Circuits
Protection
❍
❍
Open collector
SCP with timer (latch)
❍
❍
❍
—
—
❍
❍
—
❍
—
—
HA16116
Ch 1
—
❍
❍
Totem pole
power MOS FET
driver
Pulse-by-pulse
current limiter and
intermittent operation
by on/off timer
Ch 2
—
❍
—
HA16121
Ch 1
—
❍
❍
Ch 2
❍
—
—
Rev.2.0, Sep.18.2003, page 2 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Pin Arrangement
GND*1
1
16
Vref
SYNC
2
15
ADJ
RT
3
14
DB
CT
4
13
ON/OFF
IN(−)
5
12
TM
E/O
6
11
CL(−)
IN(+)
7
10
VIN
P.GND*1
8
9
OUT
(Top view)
Note: 1. Pin 1 (GND) and Pin 8 (P.GND) must be connected each other with external wire.
Pin Description
Pin No.
Symbol
Function
1
GND
Signal ground
2
SYNC
External sync signal input (synchronized with falling edge)
3
RT
Oscillator timing resistor connection (bias current control)
4
CT
Oscillator timing capacitor connection (sawtooth voltage output)
5
IN(–)
Inverting input to error amplifier
6
E/O
Error amplifier output
7
IN(+)
Non-inverting input to error amplifier
8
P.GND
Power ground
9
OUT
Output (pulse output to gate of power MOS FET)
10
VIN
Power supply input
11
CL(–)
Inverting input to current limiter
12
TM
Timer setting for intermittent shutdown when overcurrent is detected
(sinks timer transistor current)
13
ON/OFF
IC on/off control (off below approximately 0.7 V)
14
DB
Dead-band duty cycle control input
15
ADJ
Reference voltage (Vref) adjustment input
16
Vref
2.5 V reference voltage output
Rev.2.0, Sep.18.2003, page 3 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Block Diagram
Vref
16
ADJ
ADJ
DB
ON/OFF
TM
CL(−)
VIN
OUT
15
14
13
12
11
10
9
VIN ON/OFF
2.5V
bandgap
reference
voltage
generator
from
UVL
UVL
H
L
VL VH
0.2 V
−
1k
+
CL
Vref
0.3V
UVL
output
Latch
S Q
R
OVP
from
UVL
PWM COMP
VIN
+
−
+
Triangle waveform
generator
*1
OUT
NAND (HA16114)
1.6 V
1.0 V
1k
0.3 V
Latch reset pulses
1.1 V
RT
Bias
current
from
UVL
+
EA
−
1
2
3
4
5
6
7
8
GND
SYNC
RT
CT
IN(−)
E/O
IN(+)
P.GND
Note: 1. The HA16120 has an AND gate.
Rev.2.0, Sep.18.2003, page 4 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Timing Waveforms
Generation of PWM pulse output from sawtooth wave (during steady-state operation)
T=
Dead-band
voltage (at DB)
1
fOSC
1.6 V typ
Sawtooth wave
(at CT)
1.0 V
typ
Error amplifier
output (at E/O)
HA16114 PWM
pulse output
(drives gate of
P-channel
power MOS FET)
VIN
HA16120 PWM
pulse output
(drives gate of
N-channel
power MOS FET)
VIN
Off
0V
0V
Off
Off
Off
Off
Off
On
On
On
On
On
On
On
On
On
On
Off
Off
Off
Off
Time t
Note: On duty =
tON
T
Rev.2.0, Sep.18.2003, page 5 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Guide to the Functional Description
The description covers the topics indicated below.
Oscillator
1. frequency
(fOSC) control and
synchronization
DC/DC output
2. voltage setting
and error
amplifier usage
3.
Dead-band and
soft-start settings
Output stage and
4. power MOS FET
driving method
GND*1
1
16
Vref
SYNC
2
15
ADJ
RT
3
14
DB
CT
4
13
ON/OFF
IN(−)
5
12
TM
E/O
6
11
CL(−)
IN(+)
7
10
VIN
P.GND*1
8
9
OUT
Vref adjustment,
undervoltage
5. lockout, and
overcurrent
protection
6. ON/OFF pin
usage
Intermittent
7. mode timing
during
overcurrent
8.
Setting of
current limit
(Top view)
Note: 1. P.GND is a high-current (±1 A maximum peak) ground pin connected to the totem-pole output circuit.
GND is a low-current ground pin connected to the Vref voltage reference. Both pins must be grounded.
1. Sawtooth Oscillator (Triangle Wave)
1.1 Operation and Frequency Control
The sawtooth wave is a voltage waveform from which the PWM pulses are created (See figure 1). The
sawtooth oscillator operates as follows. A constant current IO determined by an external timing resistor RT
is fed continuously to an external timing capacitor CT. When the CT pin voltage exceeds a comparator
threshold voltage VTH, the comparator output opens a switching transistor, allowing a 3IO discharge current
to flow from CT. When the CT pin voltage drops below a threshold voltage VTL, the comparator output
closes the switching transistor, stopping the 3IO discharge. Repetition of these operations generates a
sawtooth wave.
The value of IO is 1.1 V/RT Ω. The IO current mirror has a limited current capacity, so RT should be at least
5 kΩ (IO ≤ 220 µA).
Internal resistances RA, RB, and RC set the peak and valley voltages VTH and VTL of the sawtooth waveform at
approximately 1.6 V and 1.0 V.
Rev.2.0, Sep.18.2003, page 6 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
The oscillator frequency fOSC can be calculated as follows.
1
t 1 + t2 + t3
fOSC =
Here, t1 =
CT × (VH − VL)
1.1 V/RT
t2 =
CT × (VH − VL)
3 × 1.1 V/RT
t3 ≈ 0.8 µs (comparator delay time)
Since VH − VL = 0.6 V
fOSC ≈
1
(Hz)
0.73 × CT × RT + 0.8 (µs)
At high frequencies the comparator delay causes the sawtooth wave to overshoot the 1.6 V threshold and
undershoot the 1.0 V threshold, and changes the dead-band thresholds accordingly. Select constants by
testing under implementation conditions.
3.2 V
(Internal voltage)
Current
mirror
Vref
2.5 V
CT charging
IO
RA
Oscillator
comparator
1.1 V
1:4
Discharg
-ing 3IO
RC
RB
Sync
circuit
RT
CT
IO
SYNC
External circuit
VH = 1.6 V typ
t2
VL = 1.0 V typ
t1
Figure 1.1 Equivalent Circuit of Oscillator
Rev.2.0, Sep.18.2003, page 7 of 37
t1 : t 2 = 3 : 1
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
1.2 External Synchronization
These ICs have a sync input pin so that they can be synchronized to a primary-control AC/DC converter.
Pulses from the secondary winding of the switching transformer should be dropped through a resistor
voltage divider to the sync input pin. Synchronization takes place at the falling edge, which is optimal for
multiple-output power supplies that synchronize with a flyback AC/DC converter.
The sync input pin (SYNC) is connected internally through a synchronizing circuit to the sawtooth
oscillator to synchronize the sawtooth waveform (see figure 1.2).
• Synchronization is with the falling edge of the external sync signal.
• The frequency of the external sync signal must be in the range fOSC < fSYNC < fOSC × 2.
• The duty cycle of the external sync signal must be in the range 5% < t1/t2 < 50% (t1 = 300 ns Min).
• With external synchronization, VTH' can be calculated as follows.
VTH' = (VTH − VTL) ×
fOSC
+ VTL
fSYNC
Note: When not using external synchronization, connect the SYNC pin to the Vref pin.
VTH (1.6 V typ)
VTH'
Sawtooth wave
(fOSC)
VTL
(1.0 V typ)
Vref
SYNC pin
(fSYNC)
Synchronized
at falling edge
t1
t2
Figure 1.2 External Synchronization
Rev.2.0, Sep.18.2003, page 8 of 37
1V
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
2. DC/DC Output Voltage Setting and Error Amplifier Usage
2.1 DC/DC Output Voltage Setting
1. Positive Output Voltage (VO > Vref)
HA16114 with step-down topology
CL
VIN
IN(−)
IN(+)
−
+
EA
CL
VIN
IN(−)
IN(+)
OUT
VO
GND
−
+
EA
VO
GND
Vref
R1
R2
R1
R1 + R2
R2
VO = Vref ×
Figure 2.1 Output Voltage Setting (1)
2. Negative Output Voltage (VO < 0 V)
HA16114 with inverting topology
CL
VIN
IN(−)
IN(+)
−
EA
OUT
+
Vref
R3
−
+
R4
R2
VO = −Vref ×
R1
R3
R1 + R2
×
−1
R2
R3 + R4
Figure 2.2 Output Voltage Setting (2)
Rev.2.0, Sep.18.2003, page 9 of 37
OUT
+
−
+
−
Vref
R2
HA16120 with step-down (boost) topology
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
2.2 Error Amplifier Usage
Figure 2.3 shows an equivalent circuit of the error amplifier. The error amplifier in these ICs is a simple
NPN-transistor differential amplifier with a constant-current-driven output circuit.
The amplifier combines a wide bandwidth (fT = 4 MHz) with a low open-loop gain (50 dB Typ), allowing
stable feedback to be applied when the power supply is designed. Phase compensation is also easy.
IC internal VIN
IN(−)
E/O
IN(+)
To internal PWM
comparator
80 µA
40 µA
Figure 2.3 Error Amplifier Equivalent Circuit
3. Dead-Band Duty Cycle and Soft-Start Settings
3.1 Dead-Band Duty Cycle Setting
The dead-band duty cycle (the maximum duty cycle of the PWM pulse output) can be programmed by the
voltage VDB at the DB pin. A convenient way to obtain VDB is to divide the IC’s Vref output by two external
resistors. The dead-band duty cycle (DB) and VDB can be calculated as follows.
VTH − VDB
× 100 (%) ⋅ ⋅ ⋅ ⋅ This applies when VDB > VTL.
VTH − VTL
If VDB < VTL, there is no PWM output.
R2
VDB = Vref ×
R1 + R2
DB =
Note: VDB is the voltage at the DB pin.
VTH: 1.6 V (Typ)
VTL: 1.0 V (Typ)
Vref is typically 2.5 V. Select R1 and R2 so that 1.0 V ≤ VDB ≤ 1.6 V.
To Vref
R1
Sawtooth
wave
Sawtooth wave
−
DB
E/O
PWM
COMP
+
+
VDB
R2
Voltage at DB pin
VTH
VDB
VTL
from
UVL
Dead band
Note: VTH and VTL vary depending on the oscillator.
Select constants by testing under implementation
conditions.
Figure 3.1 Dead-Band Duty Cycle Setting
Rev.2.0, Sep.18.2003, page 10 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
3.2 Soft-Start Setting
Soft-start avoids overshoot at power-up by widening the PWM output pulses gradually, so that the
converted DC output rises slowly. Soft-start is programmed by connecting a capacitor between the DB pin
and ground. The soft-start time is determined by the time constant of this capacitor and the resistors that set
the voltage at the DB pin.
tsoft = −C1 × R × ln (1 −
R=
R1 × R 2
R1 + R2
VDB = Vref ×
VX
)
VDB
R2
R1 + R 2
Note: VX is the voltage at the DB pin after time t (VX < VDB).
Undervoltage
lockout released
Sawtooth
To Vref wave
PWM
COMP
−
VX
E/O
R1
+
R2
1.6 V
VDB
VTL
DB
1.0 V
+
C1
VTH
Sawtooth wave
VX
from
UVL
UVL sink
transistor
t
Soft-start time
tsoft
Figure 3.2 Soft-Start Setting
3.3 Quick Shutdown
The quick shutdown function resets the voltages at all pins when the IC is turned off, to assure that PWM
pulse output stops quickly. Since the UVL pull-down resistor in the IC remains on even when the IC is
turned off, the sawtooth wave output, error amplifier output, and DB pin are all reset to low voltage.
This feature helps in particular to discharge capacitor C1 in figure 3.2, which has a comparatively large
capacitance. In intermittent mode (explained on a separate page), this feature enables the IC to soft-start in
each on-off cycle.
Rev.2.0, Sep.18.2003, page 11 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
4. PWM Output Circuit and Power MOSFET Driving Method
These ICs have built-in totem-pole push-pull drive circuits that can drive a power MOS FET as shown in
figure 4.1. The power MOS FET can be driven directly through a gate protection resistor.
If VIN exceeds the gate breakdown voltage of the power MOS FET additional protective measures should be
taken, e.g. by adding Zener diodes as shown in figure 4.2.
To drive a bipolar power transistor, the base should be protected by voltage and current dividing resistors as
shown in figure 4.3.
VIN
To CL
RG
OUT
Bias
circuit
Example:
P-channel power MOSFET
Gate protection
resistor
VO
Totem-pole output circuit
P.GND
Figure 4.1 Connection of Output Stage to Power MOS FET
VIN
VO
RG
OUT
GND
DZ
Example: N-channel power MOSFET
Figure 4.2 Gate Protection by Zener Diodes
VIN
Base current
limiting resistor
VO
OUT
GND
Base discharging resistor
Example: NPN power transistor
Figure 4.3 Driving a Bipolar Power Transistor
Rev.2.0, Sep.18.2003, page 12 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
5. Voltage Reference (Vref = 2.5 V)
5.1 Voltage Reference
A bandgap reference built into the IC (see figure 5.1) outputs 2.5 V ± 50 mV. The sawtooth oscillator,
PWM comparator, latch, and other internal circuits are powered by this 2.5 V and an internally-generated
voltage of approximately 3.2 V.
The voltage reference section shut downs when the IC is turned off at the ON/OFF pin as described later,
saving current when the IC is not used and when it operates in intermittent mode during overcurrent.
VIN
ON/OFF
−
+
1.25 V
Sub bandgap circuit
25 kΩ
1.25 V
3.2 V
Vref
2.5 V
ADJ
25 kΩ
Main bandgap circuit
Figure 5.1 Vref Reference Circuit
5.2 Trimming the Reference Voltage (Vref and ADJ pins)
Figure 5.2 shows a simplified circuit equivalent to figure 5.1. The ADJ pin in this circuit is provided for
trimming the reference voltage (Vref). The output at the ADJ pin is a voltage VADJ of 1.25 V (Typ)
generated by the bandgap circuit. Vref is determined by VADJ and the ratio of internal resistors R1 and R2 as
follows:
Vref = VADJ ×
R1 + R 2
R2
The design values of R1 and R2 are 25 kΩ with a tolerance of ±25%.
If trimming is not performed, the ADJ pin open can be left open.
VIN
Vref
R1
25 kΩ
(typ)
R2
25 kΩ
(typ)
ADJ
−
+
VBG (bandgap voltage)
1.25 V (typ)
Figure 5.2 Simplified Diagram of Voltage Reference Circuit
Rev.2.0, Sep.18.2003, page 13 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
The relation between Vref and the ADJ pin enables Vref to be trimmed by inserting one external resistor
(R3) between the Vref and ADJ pins and another (R4) between the ADJ pin and ground, to change the
resistance ratio. Vref is then determined by the combined resistance ratio of the internal R1 and R2 and
external R3 and R4.
Vref = VADJ ×
RA + R B
RB
Where, RA: parallel resistance of R1 and R3
RB: parallel resistance of R2 and R4
Although Vref can be trimmed by R3 or R4 alone, to decrease the temperature dependence of Vref it is
better to use two resistors having identical temperature coefficients. Vref can be trimmed in the range of
2.5 V ± 0.2 V. Outside this range, the bandgap circuit will not operate and the IC may shut down.
Vref
R3
External
resistors
ADJ
R4
R1
RA =
R1 R3
R1 + R 3
RB =
R2 R4
R2 + R 4
Internal
resistors
R2
Figure 5.3 Trimming of Reference Voltage
5.3 Vref Undervoltage Lockout and Overvoltage Protection
The undervoltage lockout (UVL) function turns off PWM pulse output when the input voltage (VIN) is low.
In these ICs, this is done by monitoring the Vref voltage, which normally stays constant at approximately
2.5 V. The UVL circuit operates with hysteresis: it shuts PWM output off when Vref falls below 1.7 V,
and turns PWM output back on when Vref rises above 2.0 V. Undervoltage lockout also provides
protection in the event that Vref is shorted to ground.
The overvoltage protection circuit shuts PWM output off when Vref goes above 6.8 V. This provides
protection in case the Vref pin is shorted to VIN or another high-voltage source.
PWM
output
PWM
output
off
PWM output on
PWM output off
1.7 2.0
2.5
5.0
6.8
10
Vref (V)
Figure 5.4 Vref Undervoltage Lockout and Overvoltage Protection
UVL Voltage
Vref (V typ)
VIN (V typ)
Description
VH
2.0 V
3.6 V
VIN increasing: UVL releases; PWM output starts
VL
1.7 V
3.3 V
VIN decreasing: undervoltage lockout; PWM output stops
Rev.2.0, Sep.18.2003, page 14 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
6. Usage of ON/OFF
OFF Pin
This pin is used for the following purposes:
• To shut down the IC while its input power remains on (power management)
• To externally alter the UVL release voltage
• With the timer (TM) pin, to operate in intermittent mode during overcurrent (see next section)
6.1 Shutdown by ON/OFF
OFF Pin Control
The IC can be shut down safely by bringing the voltage at the ON/OFF pin below about 0.7 V (the internal
VBE value). This feature can be used in power supply systems to save power. When shut down, the
HA16114 draws a maximum current (IOFF) of 10 µA, while the HA16120 draws a maximum 150 µA. The
ON/OFF pin sinks 290 µA (Typ) at 5 V, so it can be driven by TTL and other logic ICs. If intermittent
mode will also be employed, use a logic IC with an open-collector or open-drain output.
IIN
RA
VIN
External logic IC
Off
To other circuitry
On
RB
TM
To latch
10 kΩ
ON/OFF
Switch
CON/OFF
VIN
+
Q1
Vref
reference
Vref
output
3VBE
−
Q2
GND
Q3
On/off hysteresis circuit
HA16114,
HA16120
Figure 6.1 Shutdown by ON/OFF
OFF Pin Control
6.2 Adjustment of UVL Voltages (when not using intermittent mode)
These ICs permit external adjustment of the undervoltage lockout voltages. The adjustment is made by
changing the undervoltage lockout thresholds VTH and VTL relative to VIN, using the relationships shown in
the accompanying diagrams.
When the IC is powered up, transistor Q3 is off, so VON is 2VBE, or about 1.4 V. Connection of resistors RC
and RD in the diagram makes undervoltage lockout release at:
VIN = 1.4 V ×
RC + RD
RD
This VIN is the supply voltage at which undervoltage lockout is released. At the release point Vref is still
below 2.5 V. To obtain Vref = 2.5 V, VIN must be at least about 4.3 V.
Since VON/OFF operates in relation to the base-emitter voltage of internal transistors, VON has a temperature
coefficient of approximately –4 mV/°C. Keep this in mind when designing the power supply unit.
When undervoltage lockout and intermittent mode are both used, the intermittent-mode time constant is
shortened, so the constants of external components may have to be altered.
Rev.2.0, Sep.18.2003, page 15 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
IIN
TM
(open)
RC
VIN
VIN
To other circuitry
To latch
ON/OFF
Q1
10 kΩ
RD
3VBE
Vref
generation
circuit
Q3
Q2
GND
3
Vref output
On/off hysteresis circuit
2.5 V
VIN ≥ 4.5 V
2
Vref
VOFF
0.7 V
1
0
0
1
VON
1.4 V
2
3
VON/OFF
4
5
Figure 6.2 Adjustment of UVL Voltages
7. Timing of Intermittent Mode during Overcurrent
7.1 Principle of Operation
These ICs provide pulse-by-pulse overcurrent protection by sensing the current during each pulse and
shutting off the pulse if overcurrent is detected. In addition, the TM and ON/OFF pins can be used to
operate the IC in intermittent mode if the overcurrent state continues. A power supply with sharp settling
characteristics can be designed in this way.
Intermittent mode operates by making use of the hysteresis of the ON/OFF pin threshold voltages VON and
VOFF (VON – VOFF = VBE). The timing can be programmed as explained below.
When not using intermittent mode, leave the TM pin open, and pull the ON/OFF pin up to VON or higher.
The VBE is base emitter voltage of internal transistors.
VIN
390 kΩ
2.2 kΩ
+
2.2 µF
−
RA
RB
Latch
S
Q
R
TM
ON/OFF
Current
limiter
CL
Vref
reference
CON/OFF
Figure 7.1 Connection Diagram (example)
Rev.2.0, Sep.18.2003, page 16 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
7.2 Intermittent Mode Timing Diagram (VON/OFF only)
3VBE*1
c
c
VON/OFF
2VBE
VBE
On
IC is on
a
IC is off
b
0V
On
Off
t
TON
2TON
TOFF
a. Continuous overcurrent is detected
b. Intermittent operation starts (IC is off)
c. Voltage if overcurrent ends (thick dotted line)
Note: 1. VBE is the base-emitter voltage of internal transistors, and is approximately 0.7 V.
(See the figure 6.1.)
For details, see the overall waveform timing diagram.
Figure 7.2 Intermittent Mode Timing Diagram (VON/OFF only)
7.3 Calculation of Intermittent Mode Timing
Intermittent mode timing is calculated as follows.
(1) TON (time until the IC shuts off when continuous overcurrent occurs)
TON = CON/OFF × RB × ln
2VBE
VBE
×
1
1 − On duty*
1
1 − On duty*
1
≈ 0.69 × CON/OFF × RB ×
1 − On duty*
= CON/OFF × RB × ln2 ×
(2) TOFF (time from when the IC shuts off until it next turns on)
TOFF = CON/OFF × (RA + RB) × ln
VIN − VBE
VIN − 2VBE
Where VBE ≈ 0.7 V
The greater the overload, the sooner the pulse-by-pulse current limiter operates, the smaller tON becomes,
and from the first equation (1) above, the smaller TON becomes. From the second equation (2), TOFF depends
on VIN. Note that with the connections shown in the diagram, when VIN is switched on the IC does not turn
on until TOFF has elapsed.
Dead-band voltage
Sawtooth wave
Point at which the current
limiter operates
PWM output
(In case of HA16114)
tON
tON
× 100 (%)
T
Where T = t/fOSC
On duty =
T
Note: On duty is the percent of time the IC output is on during one PWM cycle
when the pulse-by-pulse current limiter is operating.
Figure 7.3
Rev.2.0, Sep.18.2003, page 17 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
7.4 Examples of Intermittent Mode Timing (calculated values)
8
(1) TON
TON = T1 × CON/OFF × RB
6
Here, coefficient
T1 = 0.69 ×
1
1 − On duty
4
from section 7.3 (1) previously.
T1
2
Example: If CON/OFF = 2.2 µF,
RB = 2.2 kΩ, and the on duty
of the current limiter is 75%,
then TON = 13 ms.
0
0
20
40
60
80
100
(PWM) On duty (%)
Figure 7.4 Examples of Intermittent Mode Timing (1)
(2) TOFF
TOFF = T2 × CON/OFF × (RA + RB)
0.1
Here, coefficient
T2 = ln
VIN − VBE
VIN − 2VBE
T2
from section 7.3 (2) previously.
0.05
Example: If CON/OFF = 2.2 µF, RB = 2.2 kΩ,
RA = 390 kΩ, VIN = 12 V,
0
then TOFF = 55 ms.
0
10
20
VIN (V)
Figure 7.5 Examples of Intermittent Mode Timing (2)
Rev.2.0, Sep.18.2003, page 18 of 37
30
40
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Example of step-up circuit
VIN
Sawtooth wave VCT
Dead band VDB
CF
RF
Error output VE/O
PWM pulse output
(In case of HA16120)
IC
RCS
CL
Inductor
L
OUT
Power MOS FET
drain current (ID)
(dotted line shows
inductor current)
VIN
Current limiter
pin (CL)
VIN − 0.2 V
VOUT
ID
F.B.
Determined by L and VIN
VTH (CL)
Determined by RCS and RF
Figure 7.6
8. Setting the Overcurrent Detection Threshold
The voltage drop VTH at which overcurrent is detected in these ICs is typically 0.2 V. The bias current is
typically 200 µA. The power MOS FET peak current value before the current limiter goes into operation is
given as follows.
ID =
VTH − (RF + RCS) × IBCL
RCS
Where, VTH = VIN – VCL = 0.2 V, VCL is a voltage refered on GND.
Note that RF and CF form a low-pass filter with a cutoff frequency determined by their RC time constant.
This filter prevents incorrect operation due to current spikes when the power MOS FET is switched on or
off.
VIN
CF 1800 pF
IBCL
To other
circuitry
CL
1k
200 µA
RCS
0.05 Ω
RF
240 Ω
G
OUT
S
Detector
output
(internal)
VO
D
+
IN(−)
− +
−
Note: This circuit is an example for step-down use.
Figure 8.1 Example for Step-Down Use
With the values shown in the diagram, the peak current is:
ID =
0.2 V − (240 Ω + 0.05 Ω) × 200 µA
= 3.04 A
0.05 Ω
The filter cutoff frequency is calculated as follows:
fC =
1
1
=
= 370 kHz
2π CF RF 6.28 × 1800 pF × 240 Ω
Rev.2.0, Sep.18.2003, page 19 of 37
VIN
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Item
Symbol
HA16114P/FP,
HA16120FP
HA16114PJ/FPJ,
HA16120FPJ
Unit
Supply voltage
VIN
40
40
V
Output current (DC)
IO
±0.1
±0.1
A
Output current (peak)
IO peak
±1.0
±1.0
A
Current limiter input voltage
VCL
VIN
VIN
V
Error amplifier input voltage
VIEA
VIN
VIN
V
E/O input voltage
VIE/O
Vref
Vref
V
RT source current
IRT
500
500
µA
TM sink current
ITM
3
3
mA
SYNC voltage
VSYNC
Vref
Vref
V
SYNC current
ISYNC
±250
µA
±250
1, 2
1, 2
Power dissipation
PT
680* *
680* *
mW
Operating temperature
Topr
–40 to +85
–40 to +85
°C
Junction temperature
TjMax
125
125
°C
Storage temperature
Tstg
–55 to +125
–55 to +125
°C
Permissible dissipation PT (mW)
Notes: 1. This value is for an SOP package (FP) and is based on actual measurements on a 40 × 40 × 1.6
mm glass epoxy circuit board. With a 10% wiring density, this value is permissible up to Ta =
45°C and should be derated by 8.3 mW/°C at higher temperatures. With a 30% wiring density,
this value is permissible up to Ta = 64°C and should be derated by 11.1 mW/°C at higher
temperatures.
2. For the DIP package. (P)
This value applies up to Ta = 45°C; at temperatures above this, 8.3 mW/°C derating should be
applied.
800
10% wiring density
680 mW
30% wiring density
600
447 mW
400
348 mW
200
0
−40
−20
0
20
40
45°C
64°C
85°C
60
80
100
Operating ambient temperature Ta (°C)
Rev.2.0, Sep.18.2003, page 20 of 37
125°C
120
140
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Electrical Characteristics
(Ta = 25°C, VIN = 12 V, fOSC = 100 kHz)
Item
Voltage
reference
section
Sawtooth
oscillator
section
Dead-band
adjustment
section
PWM
comparator
section
Note:
Symbol
Min
Typ
Max
Unit
Test Conditions
Output voltage
Vref
2.45
2.50
2.55
V
IO = 1 mA
Line regulation
Line
—
2
60
mV
4.5 V ≤ VIN ≤ 40V
Load regulation
Load
—
30
60
mV
0 ≤ IO ≤ 10 mA
Short-circuit output
current
IOS
10
24
—
mA
Vref = 0 V
Vref overvoltage
protection threshold
Vrovp
6.2
6.8
7.4
V
Temperature stability
of output voltage
∆Vref/∆Ta
—
100
—
ppm/°C
Vref adjustment
voltage
VADJ
1.225
1.25
1.275
V
Maximum frequency
fmax
600
—
—
kHz
Minimum frequency
fmin
—
—
1
Hz
Frequency stability
with input voltage
∆f/f01
—
±1
±3
%
4.5 V ≤ VIN ≤ 40 V
(f01 = (fmax + fmin)/2)
Frequency stability
with temperature
∆f/f02
—
±5
—
%
–20°C ≤ Ta ≤ 85°C
(f02 = (fmax + fmin)/2)
Oscillator frequency
fOSC
90
100
110
kHz
RT = 10 kΩ
CT = 1300 pF
Low level threshold
voltage
VTL
0.9
1.0
1.1
V
Output duty cycle:
0% on
High level threshold
voltage
VTH
1.5
1.6
1.7
V
Output duty cycle:
100% on
Threshold difference
∆VTH
0.5
0.6
0.7
V
∆VTH = VTH – VTL
Output source current
Isource
170
250
330
µA
DB pin: 0 V
Low level threshold
voltage
VTL
0.9
1.0
1.1
V
Output duty cycle:
0% on
High level threshold
voltage
VTH
1.5
1.6
1.7
V
Output duty cycle:
100% on
Threshold difference
∆VTH
0.5
0.6
0.7
V
∆VTH = VTH – VTL
1. Resistors connected to ON/OFF pin:
10 VIN pin
390 kΩ
12 TM pin
2 kΩ
13 ON/OFF pin
Rev.2.0, Sep.18.2003, page 21 of 37
Notes
1
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Electrical Characteristics (cont.)
(Ta = 25°C, VIN = 12 V, fOSC = 100 kHz)
Item
Error
amplifier
section
Overcurrent
detection
section
UVL section
Symbol
Min
Typ
Max
Unit
Input offset voltage
VIO
—
2
10
mV
Input bias current
IB
—
0.5
2.0
µA
Output sink current
IOsink
28
40
52
µA
VO = 2.5 V
Output source
current
IOsource
28
40
52
µA
VO = 1.0 V
Common-mode
input voltage range
VCM
1.1
—
3.7
V
Voltage gain
AV
40
50
—
dB
Unity gain
bandwidth
BW
—
4
—
MHz
High level output
voltage
VOH
3.5
4.0
—
V
IO = 10 µA
Low level output
voltage
VOL
—
0.2
0.5
V
IO = 10 µA
Threshold voltage
VTH
VIN–0.22
VIN–0.2
VIN–0.18
V
CL(–) bias current
IBCL(–)
140
200
260
µA
Turn-off time
tOFF
—
200
300
ns
1
—
500
600
ns
2
Vref high level
threshold voltage
VTH
1.7
2.0
2.3
V
Vref low level
threshold voltage
VTL
1.4
1.7
2.0
V
Threshold
difference
∆VTH
0.1
0.3
0.5
V
VIN high level
threshold voltage
VINH
3.3
3.6
3.9
V
VIN low level
threshold voltage
VINL
3.0
3.3
3.6
V
Notes: 1. HA16114 only.
2. HA16120 only.
Rev.2.0, Sep.18.2003, page 22 of 37
Test Conditions
Notes
f = 10 kHz
CL(–) = VIN
∆VTH = VTH – VTL
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Electrical Characteristics (cont.)
(Ta = 25°C, VIN = 12 V, fOSC = 100 kHz)
Item
Output
stage
External
sync
section
On/off
section
Total
device
Symbol
Min
Typ
Max
Unit
Test Conditions
Output low voltage
VOL
—
0.9
1.5
V
IOsink = 10 mA
Output high voltage
VOH1
VIN–2.2
VIN–1.6
—
V
IOsource = 10 mA
High voltage when off
VOH2
VIN–2.2
VIN–1.6
—
V
IOsource = 1 mA
ON/OFF pin: 0 V
1
Low voltage when off
VOL2
—
0.9
1.5
V
IOsink = 1 mA
ON/OFF pin: 0 V
2
Rise time
tr
—
50
200
ns
CL = 1000 pF
Fall time
tf
—
50
200
ns
CL = 1000 pF
SYNC source current
ISYNC
120
180
240
µA
SYNC pin: 0 V
Sync input
frequency range
fSYNC
fOSC
—
fOSC × 2
kHz
External sync
initiation voltage
VSYNC
Vref–1.0
—
Vref–0.5
V
Minimum pulse width
of sync input
PWmin
300
—
—
ns
Input sync pulse
duty cycle
PW
5
—
50
%
ON/OFF sink current 1
ION/ OFF 1
60
90
120
µA
ON/OFF pin: 3 V
ON/OFF sink current 2
ION/ OFF 2
220
290
380
µA
ON/OFF pin: 5 V
IC on threshold
VON
1.1
1.4
1.7
V
IC off threshold
VOFF
0.4
0.7
1.0
V
ON/OFF threshold
difference
∆VON/OFF
0.5
0.7
0.9
V
Operating current
IIN
6.0
8.5
11.0
mA
CL = 1000 pF
Quiescent current
IOFF
0
—
10
µA
ON/OFF pin: 0 V
1
—
120
150
µA
ON/OFF pin: 0 V
2
Notes: 1. HA16114 only.
2. HA16120 only.
3. PW = t1 / t2 × 100
External
sync pulse
t1
t2
Rev.2.0, Sep.18.2003, page 23 of 37
Notes
3
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Characteristic Curves
Reference Voltage vs. Supply Voltage
Reference Voltage vs. Ambient Temperature
2.54
VIN = 12 V
2.55 max
4.0
Ta = 25°C
Reference voltage (V)
Reference voltage (V)
3.0
2.5V
2.0
1.0
2.52
2.50
SPEC
2.48
2.45 min
0.0
0
1
2
3
4
4.3V
5
40
2.46
−20
0
20
40
60
80
Low Level Threshold Voltage of Sawtooth Wave vs.
Frequency
2.5
Ta = 25°C
VIN = 12 V
2.0 RT = 10 kΩ
High Level Threshold Voltage of Sawtooth Wave vs.
Frequency
2.5
Ta = 25°C
VIN = 12 V
2.0 RT = 10 kΩ
1.5
1.0
0.5
0.0
100
200
300
400
Frequency (kHz)
Rev.2.0, Sep.18.2003, page 24 of 37
500
600
High level threshold voltage of
sawtooth wave (V)
Ambient temperature (°C)
Low level threshold voltage of
sawtooth wave (V)
Supply voltage (V)
1.5
1.0
0.5
0.0
100
200
300
400
Frequency (kHz)
500
600
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Oscillator Frequency Change
with Ambient Temperature (1)
Oscillator Frequency Change
with Ambient Temperature (2)
10
VIN = 12 V
fOSC = 100 kHz
5
SPEC
0
−5
−10
−20
0
20
40
60
80
VIN = 12 V
fOSC = 350 kHz
Oscillator frequency change (%)
Oscillator frequency change (%)
10
5
0
−5
−10
−20
0
Ambient temperature (°C)
20
40
60
80
Ambient temperature (°C)
Error Amplifier Gain, Error Amplifier Phase vs. Error Amplifier Input Frequency
AVO
40
0
φ
45
20
90
Error amplifier phase φ (deg.)
Error amplifier gain AVO (dB)
60
135
0
1k
BW
3k
10 k
30 k
100 k
300 k
Error amplifier input frequency fIN (Hz)
Rev.2.0, Sep.18.2003, page 25 of 37
1M
3M
180
10 M
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Current limiter turn-off time (ns)
Error amplifier voltage gain (dB)
Error Amplifier Voltage Gain vs. Ambient Temperature
60
VIN = 12 V
f = 10 kHz
55
50 dB typ
50
45
Current Limiter Turn-Off Time vs.
Current Limiter Threshold Voltage Note
500
• HA16114
Ta = 25°C
VIN = 12 V
CL = 1000 pF
400
300 ns max
300
200
40 dB min
40
−20
100
0.1
80
0.2
0.3
0.4
0.5
CL voltage VIN−VCL (V)
Note: Approximatery 300 ns greater than this
in the case of the HA16120.
Current Limiter Threshold Voltage vs.
Ambient Temperature
VIN = 12 V
300
0.22 max
Current limiter turn-off time (ns)
Current limiter threshold voltage (V)
0.22
0
20
40
60
Ambient temperature (°C)
0.21
0.20
0.19
Current Limiter Turn-Off Time vs.
Ambient Temperature Note
• HA16114
300 ns max
250
200
200 ns typ
VIN = 12 V
150 VCL = VTH − 0.3 V
CL = 1000 pF
0.18 min
0.18
−20
0
20
40
60
Ambient temperature (°C)
Rev.2.0, Sep.18.2003, page 26 of 37
80
100
−20
0
20
40
60
80
Ambient temperature (°C)
Note: Approximatery 300 ns greater than this
in the case of the HA16120.
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Reference Voltage vs. IC On/Off Voltages
IC On/Off Voltages vs. Ambient Temperature
2.0
VIN = 12 V
fOSC = 100 kHz
5.0
Ta = 25°C
VIN = 12 V
IC off voltage
3.0
IC on voltage
SPEC
2.0
IC on/off voltage (V)
Reference voltage (V)
4.0
SPEC
SPEC
1.5
IC on voltage
1.0
SPEC
IC off voltage
0.5
1.0
0.0
0
0.5
1.0
1.5
2.0
2.5
0.0
−20
0
20
40
60
80
Ambient temperature (°C)
Operating Current vs. Supply Voltage
Peak Output Current vs. Load Capacitance
600
Ta = 25°C
VIN = 12 V
500 f
OSC = 100 kHz
20
Operating current (mA)
Peak output current (mA)
IC on/off voltage (V)
400
300
200
Ta = 25°C
fOSC = 100 kHz
On duty = 50%
CL = 1000 pF
15
SPEC
10
5
100
0
0
1000
2000
3000
4000
Load capacitance (pF)
Rev.2.0, Sep.18.2003, page 27 of 37
5000
0
0
10
20
Supply voltage (V)
30
40
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Operating Current vs. Output Duty Cycle
Operating current (mA)
20
Ta = 25°C
VIN = 12 V
fOSC = 100 kHz
CL = 1000 pF
15
SPEC
10
5
0
0
20
40
60
80
100
Output duty cycle (%)
PWM Comparator Input vs. Output Duty Cycle (1)
100
• HA16114
PWM Comparator Input vs. Output Duty Cycle (2)
100
• HA16120
80
ON duty (%)
ON duty (%)
80
60
40
fOSC
600 kHz
60
fOSC
600 kHz
40
50 kHz
20
20
300 kHz
50 kHz
300 kHz
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDB or VE/O (V)
Note: The on-duty of the HA16114 is the proportion
of one cycle during which output is low.
Rev.2.0, Sep.18.2003, page 28 of 37
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VDB or VE/O (V)
Note: The on-duty of the HA16120 is the proportion
of one cycle during which output is high.
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Output voltage VO (VDC)
Output pin (Output Resistor) Characteristics
12
• HA16114
Output high voltage
11
when on
VGS
(P-channel
Power MOS FET)
10
Output high voltage
when off
9
• HA16120
3
Output low voltage
when on
Output low voltage
when off
2
1
0
0
2
4
6
8
Io sink or Io source (mA)
Rev.2.0, Sep.18.2003, page 29 of 37
10
VGS
(N-channel
Power MOS FET)
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Output Waveforms: Rise of Output Voltage VOUT
15
10
VOUT
(V)
5
Vref DB
0
CL(−) VIN
OUT
400
IN(+) RT
CL
1000 pF
CT
200
IO
(mA)
10 kΩ
1300 pF
IO
0
Test Circuit
−200
−400
200 ns/div
Output Waveforms: Fall of Output Voltage VOUT
15
10
VOUT
(V)
5
Vref DB
0
CL(−) VIN
OUT
400
IN(+) RT
CL
1000 pF
CT
200
IO
(mA)
10 kΩ
1300 pF
0
Test Circuit
−200
−400
Rev.2.0, Sep.18.2003, page 30 of 37
200 ns/div
IO
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Oscillator Frequency vs. Timing Capacitance
1000
RT = 3kΩ
RT = 10kΩ
RT = 30kΩ
Oscillator frequency fOSC (kHz)
100
10
RT = 100kΩ
RT = 300kΩ
RT = 1MΩ
1
0.1
1
10
102
103
104
Timing capacitance CT (pF)
Rev.2.0, Sep.18.2003, page 31 of 37
105
106
Rev.2.0, Sep.18.2003, page 32 of 37
−
5C
Ground strip
0.1µ
10 k
ADJ
SYNC
2
Vref
GND
1
13
12
3
RT
560p
4
CT
220
1
2
3
4
OUT
9
7
Use a switching element (power MOS FET) with low on-resistance.
Use an inductor with low DC resistance.
Use a Schottky barrier diode (SBD) with low VF.
Use a low-ESR capacitor designed for switching power supplies.
8
5D
1
GDS
−
+
Low-ESR
capacitor
560µ
12V
4
Units: C : F
R:Ω
−
5 V DC
steppeddown
output
+
5 Noise countermeasures:
5A Separate the power ground from the small-signal ground,
and connect both at one point.
5B Add noise-absorbing capacitors.
5C Ground the bottom of the package with a ground strip.
5D Make the output-to-gate wiring as short as possible.
Feedback
5k
5k
3
HRP24
5A
47µH
SBD
Power ground
0.22 µ
(noiseabsorbing
capacitor)
2
High-saturation-current choke coil
Example: Toko 8R-HB Series
Low on-resistance
P-channel power MOSFET
Example: 2SJ214, 2SJ296
Overcurrent sense resistor
5.6
(gate protection resistor)
IN(+) P.GND
VIN
470p
6
E/O
CL(−)
10
1800p
11
130k
5
IN(−)
HA16114FP
DB ON/OFF TM
−
+
14
10k
15
16
Small-signal ground
5B
470 µ
35 V
(noiseabsorbing
capacitor)
+
15 k
2µ
2k
50m
Specific tips for high efficiency (see the numbers in the diagram)
5A
12 V
DC
input
−
+
+
4.7µ
−
Dead-band and
soft-start circuit
Timing circuit for
intermittent mode
during overcurrent
390 k
• 12 VDC to 5 VDC Step-Down Converter Using HA16114FP
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Application Examples (1)
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Application Examples (2)
• External Synchronization with Primary-Control AC/DC Converter
(1) Combination with a flyback AC/DC converter (simplified schematic)
HRA83
Commercial AC
Transformer
1S2076A
+
1S2076A
−
+
HRP24
D
+
SBD
+
R1
Main DC
output
−
R2
Error amp.
−
+
−
VIN
OUT
CL(CS)
2
SYNC
VIN 10
HA16114,
HA16120
CL 11
GND OUT P.GND
1
Primary AC/DC converter IC
(HA16107, HA17384, etc.)
9
8
To A of SBD
2SJ296
+
Step-down
output
(HA16114)
K
+
−
Sub DC
output
A
SBD
HRP24
−
This is one example of a circuit that uses the features of the HA16114/120 by operating in
synchronization with a flyback AC/DC converter. Note the following design points concerning the
circuit from the secondary side of the transformer to the SYNC pin of the HA16114/120.
• Diode D prevents reverse current. Always insert a diode here. Use a general-purpose switching
diode.
• Resistors R1 and R2 form a voltage divider to ensure that the input voltage swing at the SYNC pin
does not exceed Vref (2.5 V). To maintain operating speed, R1 + R2 should not exceed 10 kΩ.
Rev.2.0, Sep.18.2003, page 33 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Application Examples (3)
• External Synchronization with Primary-Control AC/DC Converter (cont.)
(2) Combination with a forward AC/DC converter (simplified schematic)
DFG1C8
D
HRW26F
HA17431 and optocoupler
+
Input
C
A
B
Main DC
output
Feedback
section
SBD
module
−
HA16107,
HA16666 etc.
FB
2SC458
R3
Switching transformer
Coil
Coil
Coil
Coil
A
B
C
D
Primary, for main
Secondary, for output
Tertiary, for IC
For reset
R1
2
6.2kΩ
Q
R2
510Ω
VIN
390Ω
10
SYNC
VIN
HA16114,
HA16120 OUT
ZD
GND
1
9
Other parts as
on previous page
This circuit illustrates the combination of the HA16114/120 with a forward AC/DC converter. The
HA16114/120 synchronizes with the falling edge of the external sync signal, so with a forward
transformer, the sync pulses must be inverted. In the diagram, this is done by an external circuit
consisting of the following components:
• Q:
Transistor for inverting the pulses. Use a small-signal transistor.
• R1 and R2: These resistors form a voltage divider for driving the base of transistor Q. R2 also provides
a path for base discharge, so that the transistor can turn off quickly.
• R3:
Load resistor for transistor Q.
Zener diode for protecting the SYNC pin.
• ZD:
Rev.2.0, Sep.18.2003, page 34 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Overall Waveform Timing Diagram (for Application Example (1))
12 V
VIN
0V
VTM,
VON/OFF
VTM,
2.1 V
1.4 V
VON/OFF
1.4 V
0.7 V
0.0 V
On
On
(V)
3.0
On
VE/O
Off
2.0
VE/O,
VCT,
VDB
On
On
Off
Off
Off
Off
VCT
sawtooth wave
1.0
VDB
0.0
VCL
12 V
11.8 V
0V
Pulse-by-pulse
current limiting
VOUT*1 12 V
PWM
pulse 0 V
DC/DC output
(example for
positive
voltage)
Soft start
IC operation
status
Power-up
IC on
Steady state
Overcurrent
detected;
intermittent
operation
Overcurrent Quick
subsides;
shutdown
steady-state
operation
Power supply off,
IC off
Note: 1. This PWM pulse is on the step-down/inverting control channel (HA16114).
The booster control channel (HA16120) output consists of alternating L and H of the IC on cycle.
Rev.2.0, Sep.18.2003, page 35 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Application Examples (4) (Some Pointers on Use)
1. Inductor, Power MOS FET, and Diode Connections
1. Step-up topology
2. Step-down topology
VIN
V IN
CF
RF
VIN
RCS
CF
Applicable only
to HA16120
RF
VIN
CL
RCS
Applicable only
to HA16114
CL
OUT
VO
VO
OUT
GND
GND
FB
FB
3. Inverting topology
4. Step-down/step-up (buck-boost) topology
CF
RF
VIN
RCS
CF
Applicable only
to HA16114
RF
VIN
CL
CL
OUT
OUT
RCS
Applicable only
to HA16114
VO
GND
GND
FB
FB
Vref
2. Turning Output On and Off while the IC is On
To turn only one channel off, ground the DB pin or the E/O pin.
In the case of E/O, however, there will be no soft start
when the output is turned back on.
DB
E/O
OFF
Rev.2.0, Sep.18.2003, page 36 of 37
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
Package Dimensions
As of January, 2003
19.20
20.00 Max
Unit: mm
1
7.40 Max
9
6.30
16
8
1.3
0.48 ± 0.10
7.62
2.54 Min 5.06 Max
2.54 ± 0.25
0.51 Min
1.11 Max
+ 0.13
0.25 – 0.05
0˚ – 15˚
Package Code
JEDEC
JEITA
Mass (reference value)
DP-16
Conforms
Conforms
1.07 g
As of January, 2003
Unit: mm
10.06
10.5 Max
9
1
8
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.10 ± 0.10
0.80 Max
*0.22 ± 0.05
0.20 ± 0.04
2.20 Max
5.5
16
0.20
7.80 +– 0.30
1.15
0˚ – 8˚
0.70 ± 0.20
0.15
0.12 M
*Dimension including the plating thickness
Base material dimension
Rev.2.0, Sep.18.2003, page 37 of 37
Package Code
JEDEC
JEITA
Mass (reference value)
FP-16DA
—
Conforms
0.24 g
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