Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0135, -0136 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.2 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package Description The MSA-0135 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0136. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9691E OUT MSA Vd = 5 V 6-250 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. MSA-0135, -0136 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 40 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 170°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. MSA-0135, -0136 Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 0.6 GHz f3 dB 3 dB Bandwidth VSWR Units Min. Typ. dB 18.0 19.0 dB ± 0.6 GHz 1.2 Input VSWR f = 0.1 to 3.0 GHz 1.3:1 Output VSWR f = 0.1 to 3.0 GHz 1.3:1 NF 50 Ω Noise Figure f = 0.5 GHz dB 5.5 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 1.5 IP3 Third Order Intercept Point f = 0.5 GHz dBm 14.0 tD Group Delay f = 0.5 GHz psec 160 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 4.5 5.0 Max. 5.5 –9.0 Notes: 1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. 6-251 MSA-0135, -0136 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 17 mA) S21 S11 Freq. GHz Mag 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .08 .08 .08 .08 .09 .09 .11 .11 .11 .09 .08 .12 .18 .21 .23 .27 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 158 134 116 97 83 68 47 27 –18 –62 –114 –158 178 163 145 125 19.1 18.9 18.7 18.5 18.2 17.9 17.2 16.5 14.6 12.8 11.3 10.0 8.7 7.5 6.4 5.5 9.01 8.84 8.65 8.40 8.13 7.84 7.25 6.64 5.37 4.38 3.67 3.15 2.72 2.37 2.10 1.88 172 165 157 150 143 136 125 113 90 70 58 43 28 15 2 –10 –23.0 –22.4 –22.5 –22.2 –21.7 –21.6 –20.7 –19.9 –18.3 –16.8 –16.1 –15.0 –14.5 –14.0 –13.4 –13.2 .071 .076 .075 .078 .082 .083 .092 .101 .122 .144 .157 .177 .189 .200 .213 .220 3 6 12 13 16 17 22 23 27 24 24 20 14 9 4 –2 .07 .07 .07 .07 .07 .07 .07 .07 .06 .05 .03 .03 .05 .10 .14 .15 –2 –10 –10 –15 –17 –21 –30 –34 –34 –39 –61 –67 –88 –92 –99 –102 A model for this device is available in the DEVICE MODELS section. MSA-0135, -0136 Typical Performance, TA = 25°C (unless otherwise noted) 21 25 25 TC = +125°C TC = +25°C TC = –55°C 18 20 Gain Flat to DC 9 G p (dB) 12 1.0 GHz 15 I d (mA) G p (dB) 15 0.1 GHz 0.5 GHz 20 10 15 2.0 GHz 10 6 5 5 3 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0 0 1 2 FREQUENCY (GHz) 5 6 10 7.0 I d = 20 mA 18 GP 4 6 4 4 P1 dB 2 25 30 I d = 13 mA I d = 17 mA I d = 20 mA I d = 17 mA 2 0 NF (dB) NF 6 8 P1 dB (dBm) 6.5 8 2 20 Figure 3. Power Gain vs. Current. 6 20 16 15 I d (mA) Figure 2. Device Current vs. Voltage. NF (dB) G p (dB) 4 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 17 mA. P1 dB (dBm) 3 6.0 I d = 13 mA 5.5 –2 0 –2 –55 –25 +25 +85 +125 TEMPERATURE (°C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.5 GHz, Id = 17 mA. –4 0.1 5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-252 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS A01 RF INPUT 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 GROUND .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 6-253