HP MSA-0135 Cascadable silicon bipolar mmic amplifier Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0135, -0136
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 1.2 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0135 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0136.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9691E
OUT
MSA
Vd = 5 V
6-250
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
MSA-0135, -0136 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
40 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,5]:
θjc = 150°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/°C for TC > 170°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate
methods. See MEASUREMENTS section “Thermal Resistance” for more information.
MSA-0135, -0136 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 0.6 GHz
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
Typ.
dB
18.0
19.0
dB
± 0.6
GHz
1.2
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.3:1
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
5.5
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
1.5
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.0
tD
Group Delay
f = 0.5 GHz
psec
160
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.5
5.0
Max.
5.5
–9.0
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
6-251
MSA-0135, -0136 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 17 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.08
.08
.08
.09
.09
.11
.11
.11
.09
.08
.12
.18
.21
.23
.27
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
158
134
116
97
83
68
47
27
–18
–62
–114
–158
178
163
145
125
19.1
18.9
18.7
18.5
18.2
17.9
17.2
16.5
14.6
12.8
11.3
10.0
8.7
7.5
6.4
5.5
9.01
8.84
8.65
8.40
8.13
7.84
7.25
6.64
5.37
4.38
3.67
3.15
2.72
2.37
2.10
1.88
172
165
157
150
143
136
125
113
90
70
58
43
28
15
2
–10
–23.0
–22.4
–22.5
–22.2
–21.7
–21.6
–20.7
–19.9
–18.3
–16.8
–16.1
–15.0
–14.5
–14.0
–13.4
–13.2
.071
.076
.075
.078
.082
.083
.092
.101
.122
.144
.157
.177
.189
.200
.213
.220
3
6
12
13
16
17
22
23
27
24
24
20
14
9
4
–2
.07
.07
.07
.07
.07
.07
.07
.07
.06
.05
.03
.03
.05
.10
.14
.15
–2
–10
–10
–15
–17
–21
–30
–34
–34
–39
–61
–67
–88
–92
–99
–102
A model for this device is available in the DEVICE MODELS section.
MSA-0135, -0136 Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
TC = +125°C
TC = +25°C
TC = –55°C
18
20
Gain Flat to DC
9
G p (dB)
12
1.0 GHz
15
I d (mA)
G p (dB)
15
0.1 GHz
0.5 GHz
20
10
15
2.0 GHz
10
6
5
5
3
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
0
1
2
FREQUENCY (GHz)
5
6
10
7.0
I d = 20 mA
18
GP
4
6
4
4
P1 dB
2
25
30
I d = 13 mA
I d = 17 mA
I d = 20 mA
I d = 17 mA
2
0
NF (dB)
NF
6
8
P1 dB (dBm)
6.5
8
2
20
Figure 3. Power Gain vs. Current.
6
20
16
15
I d (mA)
Figure 2. Device Current vs. Voltage.
NF (dB)
G p (dB)
4
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
P1 dB (dBm)
3
6.0
I d = 13 mA
5.5
–2
0
–2
–55
–25
+25
+85
+125
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.5 GHz, Id = 17 mA.
–4
0.1
5.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-252
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
A01
RF INPUT
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
GROUND
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-253
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