Diodes FMMTL717 Sot23 pnp silicon planar high gain medium power transistor Datasheet

SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
FMMTL717
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A
COMPLEMENTARY TYPE –
FMMTL617
PARTMARKING DETAIL –
L77
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-12
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1.25
A
Peak Pulse Current
ICM
-4
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
-500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
FMMTL717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12
-35
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-25
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-8.5
V
IE=-100µA
-12
-5
MAX.
Collector Cut-Off Current ICBO
-10
nA
VCB=-10V
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-4V
Collector Cut-Off Current ICES
-10
nA
VCE=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-24
-94
-160
-200
-40
-140
-240
-290
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.25A,IB=-50mA
Base-Emitter
Saturation Voltage
VBE(sat)
-970
-1100
mV
IC=-1.25A, IB=-50mA*
Base-Emitter
Turn On Voltage
VBE(on)
-875
-1000
mV
IC=-1.25A, VCE=-2V*
Static Forward
Current Transfer Ratio
hFE
Transition Frequency
fT
205
Collector-Base
Breakdown Voltage
Cobo
15
Switching times
ton
toff
76
149
300
300
180
100
50
490
450
275
180
110
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
20
MHz
IC=-50mA, VCE=-10V
f=100MHz
pF
VCB=-10V, f=1MHz
ns
ns
IC=-1A, VCC=-10V
IB1=IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMTL717
TYPICAL CHARACTERISTICS
0.5
0.5
IC/IB=10
+25°C
0.4
VCE(sat) - (V)
VCE(sat) - (V)
0.4
IC/IB=10
IC/IB=20
IC/IB=50
0.3
0.2
-55°C
+25°C
+100°C
+150°C
0.3
0.2
0.1
0.1
0
0
1m
10m
100m
1
IC - Collector Current (A)
1m
10
VCE(sat) v IC
VCE=2V
1
10
IC/IB=10
1.2
+100°C
+25°C
-55°C
VBE(sat) - (V)
hFE - Typical Gain
800
100m
10m
IC - Collector Current (A)
VCE(sat) v IC
400
0
0.8
-55°C
+25°C
+100°C
+150°C
0.4
0
10m
1
100m
IC - Collector Current (A)
1m
1m
10
10m
1
100m
10
IC - Collector Current (A)
VBE(sat) v IC
hFE v IC
10
VBE(on) - (V)
IC - Collector Current (A)
VCE=2V
1.6
-55°C
+25°C
+100°C
+150°C
1.2
0.8
0.4
0
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
10
0.1
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
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