RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Vishay High Power Products Schottky Rectifier, 300 A FEATURES 175°C T J operation Center tap module TO-244 (non-insulated) TO-244 (insulated) Low forward voltage drop High frequency operation Lug terminal anode 1 Guard ring for enhanced ruggedness and long term reliability Lug terminal anode 2 Lug terminal common cathode Lug terminal anode 1 Lead (Pd)-free Designed and qualified for industrial level DESCRIPTION Lug terminal anode 2 Base common cathode The NKSD300... Schottky rectifier common cathode module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. PRODUCT SUMMARY lF(AV) 300A VR 100 V VALUES UNIT 300 A 100 V 22000 A 0.72 V -55 to 175 ºC NKSD300-100 UNIT 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM t p = 5 µs sine VF 150 Apk, TJ = 125°C (per leg) TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage www.nellsemi.com SYMBOL VR V RWM Page 1 of 6 RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Vishay High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig.5 VALUES UNIT SYMBOL TEST CONDITIONS I F(AV) 50% duty cycle at T C = 138°C, rectangular waveform 150 per leg per device 300 Maximum peak one cycle non-repetitive surge current per leg See fig.7 l FSM Non- repetitive avalanche energy per leg E AS T J =25°C, l AS =13A, L=0.2mH Repetitive avalanche current per leg l AR Current decaying linearly to zero in 1 µs Frequency limited by T J maximum V A =1.5xV R typical SYMBOL TEST CONDITIONS A Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse V RRM applied 5 µs sine or 3 µs rect. pulse 22000 2500 15 mJ 1 A ELECTRICAL SPECIFICATIONS PARAMETER UNIT VALUES 150A 0.91 T J = 25°C Maximum forward voltage drop per leg See fig.1 300A 1.09 150A 0.72 V FM (1) V T J = 125°C 300A Maximum reverse leakage current per leg See fig.2 0.85 T J = 25°C 4.5 V R = Rated V R l RM (1) mA T J = 125°C 80 Maximum junction capacitance per leg CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated V R Maximum RMS insulation voltage V INS 50 Hz 4150 pF 6 nH 10000 V/µs 3000 (1min) V 3600 (1s) Note (1) Pulse width < 300 µs, duty cycle < 2% THERMAL-MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNIT -55 - 175 ºC - - 0.40 - - 0.28 - - 0.20 - - 0.14 - 0.1 - TO-244 (non-insulated) - 85 (3) - TO-244 (insulated) - 100 (3.53) - Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) vertical pull - - 80 2" lever pull - - 35 SYMBOL PARAMETER T J ,T Stg Maximum junction and storage temperature range TO-244 (non-insulated) Thermal resistance, junction to case per leg R thJC TO-244 (insulated) Thermal resistance, junction to case per module TO-244 (non-insulated) R thCS TO-244 (insulated) Thermal resistance, case to heatsink Weight g(oz.) Case style www.nellsemi.com ºC/W JEDEC Page 2 of 6 lbf ∙ in (N∙m) lbf ∙ in TO-244AA compatible RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Vishay High Power Products Ordering Information Tabel Device code NK S D 300 1 2 3 4 - 100 I 5 6 1 - Nell's power module 2 - S for Schottky Barrier Diode 3 - D for Dual Diodes, TO-244 Package 4 - Maximum average forward current, A 5 - Voltage rating (100 = 100V) 6 - None for non-insulated type "I" for insulated type Fig.2 Typical values of reverse current vs. Reverse voltage (Per Leg) 1000 1000 T J = 17 5ºC 100 Reverse curret, l R (mA) lnstantaneous forward current, l F (A) Fig.1 Maximum forward voltage drop characteristics (Per Leg) 100 T J = 17 5ºC T J = 1 25ºC T J = 25ºC 10 T J = 1 50ºC 10 T J = 12 5ºC T J = 100ºC 1 T J = 7 5ºC 0.1 T J = 50ºC 0.01 T J = 2 5ºC 1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 Forward voltage drop, V FM (V) 40 60 80 100 Reverse voltage, V R (V) Thermal lmpedance, R th(j-c) (°C/W) Fig.3-1 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 non-insulated) 1 0.1 D = 0.75 D = 0.50 D= 0.33 0.01 D = 0.25 Single pulse (thermal resistance) 0.001 0.00001 0.0001 D =0.20 0.001 0.01 0.1 Rectangular pulse duration,t 1 (s) www.nellsemi.com Page 3 of 6 1 10 RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Vishay High Power Products Fig.3-2 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 insulated) Thermal lmpedance, R th(j-c) (°C/W) 1 D = 0.75 D = 0.50 D= 0.33 D = 0.25 D =0.20 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 10 1 100 Rectangular pulse duration,t 1 (s) Fig.5 Maximum allowable case temperature vs. Average forward current (Per Leg) Fig.4 Typical junction capacitance vs. Reverse voltage 180 Allowable case temperature (°C) Junction capacitance, C T (pF) 10000 T J = 25ºC 1000 100 0 10 20 30 40 50 60 70 80 160 DC 150 140 130 120 110 100 0 90 100 Square wave (D = 0.50) 80% rated V r applied See note (1) 50 100 150 200 250 Average forward current, l F(AV) (A) Fig.6 Forward power loss characteristics (Per Leg) Fig.7 Maximum non-repetitive surge current (Per Leg) D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 125 100 RMS limit 75 DC 50 25 0 0 40 80 120 160 200 240 Non-Repetitive surge current, l FSM (A) Reverse voltage, V R (V) 150 Average power loss (W) 170 Average forward current, l F(AV) (A) www.nellsemi.com 10 5 At any rated load condition and with rated V RRM applied following surge 10 4 10 3 10 10 2 10 3 Square wave pulse duration, t p (µs) Page 4 of 6 10 4 RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Vishay High Power Products Fig.8 Unclamped lnductive test circuit L High-speed switch IRFP460 D.U.T. R g = 25Ω Freewheel diode Current monitor + V d = 25V 40FD04A Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at(l F(AV) /D)(see fig.6) Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 80% rated V R TO-244 (Non-Insulated) 35.0 2-Φ7.2 3 3 2 1 Φ5.2 80.0 16.8 7.0 15.0 2-1/4" 20 UNC SCREWS 64 21.0 93 All dimensions in millimeters www.nellsemi.com Page 5 of 6 RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Vishay High Power Products TO-244 (Insulated) 23.0 23.0 2-Φ7.2 1 3 2 80.0 16.8 7.0 15.0 3-1/4" 20 UNC SCREWS 67 21.0 93 All dimensions in millimeters www.nellsemi.com Page 6 of 6