HP AT-32063-BLK Low current, high performance npn silicon bipolar transistor Datasheet

Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-32063
Features
Description
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
The AT-32063 contains two high
performance NPN bipolar transistors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
• 900 MHz Performance:
1.1␣ dB NF, 14.5␣ dB G A
• Characterized for End-ofLife Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic
Package
• Tape-and-Reel Packaging
Option Available [1]
I
I
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
1
6
2
5
3
4
B1
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10␣ GHz f t , 30 GHz fmax SelfAligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, selfalignment techniques, and gold
metallization in the fabrication of
these devices.
C1
E1
C2
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager applications. Voltage breakdowns are
high enough for use at 5 volts.
E2
B2
4-63
5965-8921E
AT-32063 Absolute Maximum Ratings[1]
Symbol
Parameter
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Units
Absolute
Maximum
V
V
V
mA
mW
°C
°C
1.5
11
5.5
40
150
150
-65 to 150
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Thermal Resistance[2]:
θjc = 370°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface = 25°C.
3. Derate at 2.7 mW/°C for TC > 94.5°C.
4. 150 mW per device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
NF
Noise Figure; VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
dB
1.1[2]
GA
Associated Gain; VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
dB
12.5[2] 14.5[2]
hFE
Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA
—
ICBO
Collector Cutoff Current; VCB = 3 V
µA
0.2
IEBO
Noise Figure; VEB = 1 V
µA
1.5
50
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
output␣ loss = 0.3␣ dB.
50 Ω
50 Ω
W = 10
L = 450
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (ε = 4.3)
W = 20
L = 60
W = 10
L = 100
DIMENSIONS IN MILS
NOT TO SCALE
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
4-64
1.4[2]
270
AT-32063 Characterization Information, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Typ.
P1 dB
Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
12
G1 dB
Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dB
16
IP3
Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
24
20.0
1.50
15.0
1.00
14
10.0
0.50
13
12
5.0
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
0
0.9
11
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
1.8
0
0.9
2.4
1.8
2.4
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs.
Frequency and Current at VCE = 2.7 V.
Figure 3. Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
18
20
IP3 (dBm)
12
9
6
0
0.9
15
10
2 mA
5 mA
10 mA
20 mA
5
3
0
1.8
2.4
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs.
Frequency at VCE = 2.7 V and
IC=20mA.
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
Figure 6. Third Order Intercept vs.
Frequency and Bias at VCE = 2.7 V, with
Optimal Tuning.
4-65
10
0.9
1.8
FREQUENCY (GHz)
25
15
G1 dB (dBm)
15
P1 dB (dBm)
2.00
Ga (dB)
NOISE FIGURE (dB)
Typical Performance, TA = 25°C
Figure 4. Power at 1 dB Gain
Compression vs. Frequency at
VCE=2.7V and IC = 20 mA.
2.4
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.98
0.86
0.72
0.69
0.58
0.52
0.49
0.45
0.41
0.42
0.47
-11
-50
-82
-88
-119
-134
-145
-165
166
124
93
11.36
10.14
8.39
7.87
5.87
4.83
4.3
3.16
1.84
0.17
-1.15
3.7
3.21
2.63
2.48
1.97
1.74
1.64
1.44
1.24
1.02
0.88
171
138
113
108
85
74
67
55
39
16
-2
-34.77
-22.02
-18.97
-18.61
-17.8
-17.72
-17.69
-17.68
-16.99
-13.67
-9.84
0.02
0.08
0.11
0.12
0.13
0.13
0.13
0.13
0.14
0.21
0.32
83
59
43
41
31
28
28
30
37
45
38
0.99
0.91
0.82
0.8
0.73
0.7
0.68
0.67
0.64
0.6
0.54
-4
-20
-31
-32
-41
-45
-48
-54
-63
-81
-107
25
20
AT-32063 Typical Noise Parameters
MSG
Freq.
GHz
Fmin
dB
GA
dB
Gopt
Mag.
Ang.
Rn
—
0.9
1.8
2.4
0.71
1.37
1.80
10.4
8.3
7.2
0.76
0.60
0.50
50
112
155
0.44
0.24
0.10
GAIN (dB)
Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
15
10
MAG
MSG
5
S21
0
-5
0.1
1.1
2.1
3.1
4.1
5.1
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency at
VCE=1V, IC = 1mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.96
0.77
0.59
0.55
0.42
0.37
0.34
0.29
0.26
0.28
0.33
-12
-55
-87
-93
-121
-135
-145
-164
167
124
94
16.46
14.73
12.37
11.74
9.26
8.01
7.35
6.05
4.54
2.73
1.36
6.66
5.45
4.15
3.86
2.90
2.52
2.33
2.01
1.69
1.37
1.17
169
132
107
103
83
73
67
56
41
20
1
-37.32
-25.13
-22.42
-22.07
-20.79
-20.13
-19.67
-18.68
-16.95
-13.75
-10.70
S22
Mag
0.014
0.055
0.076
0.079
0.091
0.099
0.104
0.116
0.142
0.205
0.292
Ang
Mag
Ang
82
59
48
47
44
45
46
48
50
48
41
0.98
0.87
0.76
0.74
0.69
0.67
0.66
0.65
0.64
0.61
0.57
-5
-21
-29
-30
-36
-39
-41
-46
-53
-68
-89
30
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
GHz
Fmin
dB
GA
dB
Gopt
Mag.
Ang.
Rn
—
0.9
1.8
2.4
0.78
1.25
1.57
14.3
10.7
9.1
0.65
0.45
0.35
50
105
145
0.31
0.20
0.13
GAIN (dB)
25
20
MSG
15
MAG
10
MSG
S21
5
0
0.1
1.1
2.1
3.1
4.1
FREQUENCY (GHz)
4-66
Figure 8. Gain vs. Frequency at
VCE=2.7 V, IC = 2mA.
5.1
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA
Freq.
S11
S21
GHz
Mag
Ang
dB
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.87
0.52
0.34
0.31
0.22
0.19
0.17
0.14
0.12
0.16
0.22
-19
-72
-101
-106
-129
-141
-150
-169
160
117
93
23.36
19.21
15.40
14.60
11.54
10.12
9.33
7.95
6.34
4.46
3.15
S12
Mag
Ang
dB
14.72
9.13
5.89
5.37
3.77
3.21
2.93
2.50
2.08
1.67
1.44
162
116
94
90
74
66
61
52
39
20
2
-37.77
-27.03
-24.01
-23.41
-20.85
-19.52
-18.72
-17.22
-15.25
-12.40
-10.03
S22
Mag
Ang
Mag
Ang
80
60
58
58
58
58
57
56
52
44
33
0.96
0.72
0.62
0.61
0.58
0.57
0.57
0.57
0.56
0.53
0.48
-9
-25
-28
-29
-33
-36
-38
-42
-49
-63
-82
0.013
0.045
0.063
0.067
0.091
0.106
0.116
0.138
0.173
0.240
0.315
35
30
AT-32063 Typical Noise Parameters
25
Freq.
GHz
0.9
1.8
2.4
Fmin
dB
GA
dB
0.98
1.50
1.77
Gopt
Mag.
16.4
11.6
10.1
Ang.
0.45
0.29
0.33
51
100
153
GAIN (dB)
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA
Rn
—
MSG
20
15
MAG
10
0.23
0.16
0.11
MSG
S21
5
0
0.1
1.1
2.1
3.1
4.1
5.1
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency at
VCE=2.7 V, IC = 5mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq.
S11
S21
GHz
Mag
Ang
dB
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.55
0.20
0.13
0.13
0.10
0.09
0.09
0.08
0.10
0.15
0.21
-41
-107
-137
-141
-164
-178
172
152
127
101
86
30.48
21.24
16.48
15.60
12.26
10.78
9.93
8.52
6.85
4.92
3.59
S12
Mag
Ang
dB
33.40
11.53
6.66
6.02
4.10
3.46
3.14
2.67
2.20
1.76
1.51
143
97
82
79
67
60
56
48
36
18
0
-39.81
-29.18
-24.63
-23.79
-20.43
-18.88
-17.98
-16.39
-14.4
-11.68
-9.52
S22
Mag
Ang
Mag
Ang
74
72
72
71
68
66
64
60
54
43
31
0.83
0.56
0.53
0.53
0.52
0.53
0.53
0.53
0.52
0.48
0.44
-15
-20
-22
-22
-27
-31
-34
-39
-47
-61
-79
0.010
0.035
0.059
0.065
0.095
0.114
0.126
0.151
0.191
0.261
0.334
40
35
30
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
25
Freq.
GHz
Fmin
dB
GA
dB
Gopt
Mag.
Ang.
Rn
—
0.9
1.8
2.4
1.51
1.78
1.96
17.9
12.7
10.6
0.13
0.20
0.28
88
178
235
0.20
0.13
0.08
GAIN (dB)
AT-32063 Typical Noise Parameters
MSG
20
MAG
15
MSG
10
S21
5
0
0.1
1.1
2.1
3.1
4.1
FREQUENCY (GHz)
4-67
Figure 10. Gain vs. Frequency at
VCE=2.7 V, IC = 20mA.
5.1
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.96
0.78
0.59
0.56
0.42
0.36
0.33
0.28
0.24
0.25
0.31
-12
-53
-84
-90
-117
-131
-140
-159
171
126
95
16.50
14.84
12.5
11.92
9.46
8.21
7.55
6.24
4.72
2.88
1.49
6.69
5.52
4.23
3.94
2.97
2.57
2.38
2.05
1.72
1.39
1.19
169
133
108
104
84
74
68
57
43
21
3
-38.44
-26.20
-23.4
-23.04
-21.71
-21.04
-20.56
-19.54
-17.76
-14.47
-11.32
S22
Mag
Ang
Mag
Ang
82
60
50
49
46
47
48
50
53
52
45
0.98
0.88
0.79
0.77
0.72
0.70
0.69
0.69
0.68
0.66
0.63
-5
-19
-27
-28
-33
-36
-39
-43
-50
-64
-83
0.012
0.049
0.068
0.070
0.082
0.089
0.094
0.105
0.129
0.189
0.272
30
25
AT-32063 Typical Noise Parameters
Freq.
GHz
Fmin
dB
GA
dB
Gopt
Mag.
Ang.
Rn
—
0.9
1.8
2.4
0.75
1.26
1.60
13.7
10.8
9.6
0.74
0.55
0.45
47
101
139
0.37
0.22
0.13
GAIN (dB)
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA
MSG
20
15
MAG
10
MSG
S21
5
0
0.1
1.1
2.1
3.1
4.1
5.1
FREQUENCY (GHz)
Figure 11. Gain vs. Frequency at
VCE=5 V, IC = 2mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 20 mA
Freq.
S11
S21
GHz
Mag
Ang
dB
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.61
0.22
0.13
0.12
0.08
0.06
0.06
0.04
0.05
0.10
0.16
-36
-91
-115
-118
-137
-148
-159
175
131
99
86
30.56
21.75
17.02
16.14
12.80
11.31
10.46
9.02
7.35
5.39
4.05
S12
S22
Mag
Ang
dB
Mag
Ang
Mag
Ang
33.74
12.23
7.10
6.41
4.36
3.68
3.33
2.83
2.33
1.86
1.6
145
98
83
81
68
62
58
50
39
21
3
-40.46
-29.90
-25.40
-24.56
-21.23
-19.69
-18.79
-17.21
-15.22
-12.48
-10.27
0.01
0.03
0.05
0.06
0.09
0.10
0.12
0.14
0.17
0.24
0.31
75
72
72
71
69
66
65
61
56
46
34
0.86
0.6
0.57
0.57
0.57
0.57
0.57
0.57
0.56
0.54
0.50
-14
-19
-21
-21
-26
-30
-32
-37
-45
-58
-75
40
35
30
Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA
25
Freq.
GHz
Fmin
dB
GA
dB
Gopt
Mag.
Ang.
Rn
—
0.9
1.8
2.4
1.50
1.78
1.96
18.6
13.3
11.3
0.18
0.19
0.24
74
147
198
0.20
0.16
0.14
GAIN (dB)
AT-32063 Typical Noise Parameters
MSG
20
MAG
15
MSG
10
S21
5
0
0.1
1.1
2.1
3.1
4.1
FREQUENCY (GHz)
4-68
Figure 12. Gain vs. Frequency at
VCE=5 V, IC = 20mA.
5.1
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
0.20 (0.008)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
Part Number
AT-32063-TR1
AT-32063-BLK
No. of Devices
3000
100
Container
7" Reel
antistatic bag
4-69
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
II
II
II
II
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 63
P
P2
D
P0
E
F
W
D1
t1 (CARRIER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
4-70
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