Dual N-channel MOSFET ELM36800EA-S ■General description ■Features ELM36800EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=3.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current 3.5 2.8 10 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg A A 1.15 3 W 0.73 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Pin No. Pin name 5 1 2 GATE1 SOURCE2 3 4 GATE2 DRAIN2 5 6 SOURCE1 DRAIN1 1 2 4 3 Max. Unit 110 150 °C/W °C/W 80 °C/W Note ■Circuit SOT-26(TOP VIEW) 6 Typ. 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM36800EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) 2.5 V A 1 mΩ 1 S V 1 1 68 Vgs=4.5V, Id=2A 75 98 Vds=5V, Id=3.5A If=0.8A, Vgs=0V 4.5 Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Qgs Vgs=10V, Vds=15V, Id=3.5A Qgd td(on) tr Vgs=10V, Vds=15V, Id=1A td(off) RL=15Ω, Rgen=6Ω Vgs=0V, Vds=15V, f=1MHz Qg trr 1.5 nA 55 Gfs Vsd Body diode reverse recovery time 1.0 10 If=0.8A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 μA ±100 Vgs=10V, Id=3.5A Forward transconductance Diode forward voltage DYNAMIC PARAMETERS tf V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Turn-off fall time 30 Vds=24V, Vgs=0V Gate threshold voltage On state drain current Turn-off delay time Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.2 200 40 20 240 pF pF pF 6.5 8.5 nC 2 1.2 1.6 7 11 nC nC ns 2 2 2 12 12 18 18 ns ns 2 2 7 11 ns 2 40 80 ns Dual N-channel MOSFET NIKO-SEM P6803HAG Dual N-Channel Enhancement Mode ELM36800EA-S Field Effect Transistor ■Typical electrical and thermal characteristics ID, Drain-source current(A) VGS= 10V 6.0V RDS(ON), Normalized Drain-source on-resistance On-Region Characteristics. 10 4.5V 8 4.0V 6 4 3.5V 2 3.0V 0 0 1 TSOP-6 Lead-Free On-Resistance Variation with Drain Current and Gate Voltage. 2 1.8 VGS= 4.0V 1.6 4.5V 1.4 5.0V 1.2 6.0V 7.0V 1 10V 0.8 2 0 4 3 2 VGS, Drain-Source Voltage(V) 4 6 8 10 ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. 1.6 ID= 3.5A VGS= 10V 1.4 1.2 1 0.8 0.6 -50 0.275 RDS(ON), On-resistance(OHM) DS(ON) R , Normalized Drain-source on-resistance On-Resistance Variation with Temperature. 0.175 0.125 0 25 75 50 100 125 TA= 125°C TA= 25°C 0.075 0.025 -25 ID=2A 0.225 150 4 2 TJ, Junction Temperature(°C) Is, Reverse Drain Current (A) 10 ID, Drain Current(A) 125°C TA= -55°C 8 25°C 6 4 2 0 1 2 3 4 8 10 Body Diode Forword Voltage Variation with Source Current and Temperature. Transfer Characteristics. VDS= 5V 6 VGS, Gate to Source Voltage(V) 5 VGS, Gate to Source Voltage(V) 10 VGS= 0V 1 TA= 125°C 3 4-3 -55°C 0.01 0.001 0.0001 0 6 25°C 0.1 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forword Voltage(V) OCT-12-2005 1.4 Dual N-channel MOSFET NIKO-SEM 10 ID = 3.5A 400 15V VDS= 5V Capacitance(pF) 8 VGS (Voltage) 10V 6 4 2 300 2 3 4 6 5 Ciss 200 Coss 100 0 1 Crss 0 7 0 5 10 Qg (nC) 20 25 30 Single Pulse Maximum Power Dissipation. 5 30 100 us 10 T IMI N)L O ( S RD 3 4 1m s 10m s 1 100 ms 1s DC 0.3 VGS= 10V SINGLE PULSE R¿ JA=150°C/W TA=25°C 0.1 0.03 0.1 0.3 1 Power(W) ID, Drain Current(A) 15 VGS (Voltage) Maximum Safe Operating Area. 0.01 TSOP-6 Lead-Free Capacitance Characteristics Gate-Charge Characteristics 0 P6803HAG Dual N-Channel Enhancement Mode ELM36800EA-S Field Effect Transistor 3 2 VGS= 10V SINGLE PULSE R¿ JA=150°C/W TA=25°C 1 3 10 30 0 0.01 50 VDS, Drain-Source Voltage(V) 0.1 1 10 100 300 Single pulse time(SEC) D=0.5 0.5 P(pk) r(t), Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve. 1 0.2 0.2 0.1 0.05 0.05 0.02 R¿ JA(t) = r(t) * R¿ �� R¿ JA=150°C/W TJ-TA=P*R¿ JA(t) Duty Cycle, D= t1/ t2 0.02 0.01 Single Pulse 0.01 0.0001 t1 t2 0.1 0.001 0.01 0.1 1 10 100 t1 Time(Sec) 4 4-4 OCT-12-2005 300