UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 14.5nC) • Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G DS TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP6N60ZU FDPF6N60ZUT 600 Units V ±30 V -Continuous (TC = 25oC) 4.5 4.5* -Continuous (TC = 100oC) 2.7 2.7* - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 10.5 mJ dv/dt Peak Diode Recovery dv/dt 18* (Note 2) A 150 (Note 3) mJ 20 V/ns (TC = 25oC) 105 33.8 W - Derate above 25oC 0.85 0.27 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 18 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP6N60ZU FDPF6N60ZUT RθJC Thermal Resistance, Junction to Case 1.2 3.7 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FDP6N60ZU / FDPF6N60ZUT Rev. A 1 Units o C/W www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET April 2009 Device Marking FDP6N60ZU Device FDP6N60ZU Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF6N60ZUT FDPF6N60ZUT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 600 - - V ID = 250μA, Referenced to 25oC - 0.75 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 25 VDS = 480V, TC = 125oC - - 250 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±10 μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.7 2.0 Ω gFS Forward Transconductance VDS = 40V, ID = 2.25A - 3.5 - S VDS = 25V, VGS = 0V f = 1MHz - 650 865 pF - 75 100 pF - 5 10 pF - 14.5 20 nC - 4 - nC - 6 - nC - 19 48 ns - 25 60 ns - 25 60 ns - 45 100 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480V, ID = 4.5A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 4.5A RG = 25Ω, VGS = 10V (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 18 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4.5A - - 1.6 V trr Reverse Recovery Time - 36 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 4.5A dIF/dt = 100A/μs - 37 - nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 15mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics FDP6N60ZU / FDPF6N60ZUT Rev. A 2 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 20 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 ID,Drain Current[A] ID,Drain Current[A] 10 1 o 150 C 1 o 25 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 10 VDS,Drain-Source Voltage[V] 2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 200 2.7 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 2.4 2.1 VGS = 10V VGS = 20V 1.8 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o *Note: TC = 25 C 1.5 0 3 6 ID, Drain Current [A] 9 0 Figure 5. Capacitance Characteristics 3 Figure 6. Gate Charge Characteristics Coss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 1 2 VSD, Body Diode Forward Voltage [V] 10 1500 1000 2. 250μs Pulse Test 1 12 *Note: 1. VGS = 0V 2. f = 1MHz Ciss 500 VDS = 150V VDS = 300V VDS = 480V 8 6 4 2 Crss *Note: ID = 4.5A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] FDP6N60ZU / FDPF6N60ZUT Rev. A 0 30 3 5 10 Qg, Total Gate Charge [nC] 15 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Typical Performance Characteristics Figure 8. Maximum Safe Operating Area - FDPF6N60ZUT 1.16 30 1.12 10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.08 1.04 1.00 0.96 20μs 100μs 1ms 10ms 1 Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 0.88 -100 o 2. TJ = 150 C 3. Single Pulse 0.01 -50 0 50 100 150 o TJ, Junction Temperature [ C] DC 1 200 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 6 4 Limited by package 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 *Notes: 0.01 o Single pulse 0.01 -5 10 FDP6N60ZU / FDPF6N60ZUT Rev. A t2 1. ZθJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP6N60ZU / FDPF6N60ZUT Rev. A 5 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP6N60ZU / FDPF6N60ZUT Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] FDP6N60ZU / FDPF6N60ZUT Rev. A +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 7 2.40 ±0.20 www.fairchildsemi.com FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Mechanical Dimensions FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP6N60ZU / FDPF6N60ZUT Rev. A 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDP6N60ZU / FDPF6N60ZUT Rev. 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