Seme LAB D1204UK Metal gate rf silicon fet Datasheet

TetraFET
D1204UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
C
D
(2 pls)
E
1
B
2
3
A
G
5
4
H
FEATURES
I
• SIMPLIFIED AMPLIFIER DESIGN
F
M
J
K
N
DT
• LOW Crss
PIN 1
SOURCE (COMMON) PIN 2
GATE
PIN 3
SOURCE (COMMON) PIN 4
SOURCE (COMMON)
PIN 5
DRAIN
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• USEFUL PO AT 1GHz
• LOW NOISE
mm
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website http://www.semelab.co.uk
E-mail: [email protected]
117W
40V
±20V
15A
–65 to 150°C
200°C
Prelim. 1/99
D1204UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 100mA
VDS = 12.5V
VGS = 0
1
mA
VGS = 20V
VDS = 0
3
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
0.5
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 1A
1.2
S
GPS
Common Source Power Gain
PO = 30W
10
dB
η
Drain Efficiency
VDS = 12.5V
50
%
VSWR Load Mismatch Tolerance
f = 500MHz
20:1
—
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
IDQ = 0.6A
Ciss
Input Capacitance
VDS = 0
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance
VDS = 12.5V VGS = 0
* Pulse Test:
40
VGS = –5V f = 1MHz
180
pF
f = 1MHz
120
pF
f = 1MHz
12
pF
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website http://www.semelab.co.uk
E-mail: [email protected]
Max. 1.5°C / W
Prelim. 1/99
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