HSMC H04N60 N-channel power field effect transistor Datasheet

HI-SINCERITY
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
MICROELECTRONICS CORP.
H04N60 Series
H04N60 Series Pin Assignment
Tab
N-Channel Power Field Effect Transistor
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
1
2
3
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
Features
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
1
2
3
H04N60 Series
Symbol:
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
ID
Drain to Current (Continuous)
4
A
IDM
Drain to Current (Pulsed)
16
A
VGS
Gate-to-Source Voltage (Continue)
±30
V
H04N60E (TO-220AB)
70
W
H04N60F (TO-220FP)
30
Total Power Dissipation (TC=25oC)
PD
Tj, Tstg
Derate above 25°C
H04N60E (TO-220AB)
0.56
H04N60F (TO-220FP)
0.2
Operating and Storage Temperature Range
W/°C
-55 to 150
°C
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)
250
mJ
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
260
°C
H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 2/5
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
Parameter
Value
RθJC
Thermal Resistance Junction to Case Max.
RθJA
Thermal Resistance Junction to Ambient Max.
Units
TO-220AB
1.3
TO-220FP
5
°C/W
°C/W
62.5
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
600
-
-
V
Drain-Source Leakage Current (VDS=600V, VGS=0V)
-
-
1
uA
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
-
-
50
uA
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
-
-
100
nA
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
-
-
-100
nA
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
2
-
4
V
RDS(on)
Static Drain-Source On-Resistance (VGS=10V, ID=2A)*
-
-
2.2
Ω
gFS
Forward Transconductance (VDS=15V, ID=2A)*
2
-
-
mhos
Ciss
Input Capacitance
-
540
-
Coss
Output Capacitance
-
125
-
Crss
Reverse Transfer Capacitance
-
8
-
td(on)
Turn-on Delay Time
-
12
-
-
7
-
-
19
-
Fall Time
-
10
-
Qg
Total Gate Charge
-
5
-
Qgs
Gate-Source Charge
-
2.7
-
Qgd
Gate-Drain Charge
-
2
-
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
-
4.5
-
nH
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
-
7.5
-
nH
Min.
Typ.
Max.
Units
-
-
1.6
V
-
**
-
ns
-
302
-
ns
V(BR)DSS
IDSS
tr
td(off)
tf
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Rise Time
Turn-off Delay Time
VGS=0V, VDS=25V, f=1MHz
(VDD=300V, ID=4A, RG=9.1Ω,
VGS=10V)*
(VDS=480V, ID=4A, VGS=10V)*
pF
ns
nC
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
VSD
Forward On Voltage(1)
ton
Forward Turn-On Time
trr
Reverse Recovery Time
o
IS=4A, VGS=0V, TJ=25 C
IS=2A, VGS=0V, dIS/dt=100A/us
**: Negligible, Dominated by circuit inductance
H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 3/5
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
Capacitance Characteristics
1000
10
VGS=10V
8
800
VGS=8V
7
Capacitance (pF)
ID, Drain-Source Current (A)….
9
VGS=6V
6
5
VGS=5V
4
Ciss
600
Crss
400
3
Coss
2
200
1
VGS=4V
0
0
0
2
4
6
8
10
0.1
1
V DS, Drain-Source Voltage (V)
On Resistance Variation with Temperature
100
Drain Current Variation with Gate Voltage and
Temperature
2.500
6
2.400
o
VDS=10 V
2.300
ID, Drain-Source Current (A)….
RDS(ON) Normalized Drain-Source
On-Resistance
10
VDS, Deain-Source Voltage (V)
VGS=10V
2.200
2.100
2.000
ID=3A
1.900
1.800
1.700
Tc=25 C
5
4
3
2
1
1.600
0
1.500
0
25
50
75
100
125
o
0.0
150
Typical On-Resistance & Drain Current
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Maximum Safe Operating Area
10
2.5
1ms
2.4
2.3
VGS=10V
2.2
ID, Drain Current (A)
RDS(ON) Drain-Source On-Resistance...
1.0
V GS, Gate-Source Voltage (V)
TC, Case Temperature ( C)
VGS=15V
2.1
2.0
1.9
1.8
10ms
100ms
1
1.7
1.6
1.5
0.1
0
1
2
3
4
5
6
7
8
ID, Drain Current (A)
H04N60E, H04N60F
9
10
11
12
10
100
1000
V DS, Drain-Source Voltage (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 4/5
MICROELECTRONICS CORP.
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Marking:
A
F
B
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
E
C
D
E
0 4N60
Date Code
H
K
M
I
3
G
N
2
O
P
J
L
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
Tab
Control Code
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α4
α1
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
E O
C
D
α3
α2
α5
Date Code
G
I
J
N
2
K
1
M
L
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
3
F
F
0 4N60
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
α1/2/4/5
α3
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H04N60E, H04N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 5/5
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
100oC
150oC
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
o
150 C
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC ±5oC
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H04N60E, H04N60F
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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