Siemens BFR93P Npn silicon rf transistor (for low-distortion broadband amplifiers up to 1 ghz at collector currents from 2 ma to 30 ma.) Datasheet

NPN Silicon RF Transistor
BFR 93P
●
For low-distortion broadband amplifiers up to 1 GHz
at collector currents from 2 mA to 30 mA.
●
CECC-type available: CECC 50002/256.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
Package1)
BFR 93P
GG
Q62702-F1051
B
SOT-23
E
C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
15
V
Collector-base voltage
VCB0
20
Emitter-base voltage
VEB0
2.5
Collector current
IC
50
Base current
IB
10
Total power dissipation, TS ≤ 65 ˚C 3)
Ptot
280
mW
Junction temperature
Tj
150
˚C
Ambient temperature range
TA
– 65 … + 150
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient 2)
Rth JA
≤
385
Junction - soldering point 3)
Rth JS
≤
305
mA
Thermal Resistance
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1)
2)
K/W
BFR 93P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
15
–
–
–
–
–
–
0.05
10
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CE0
V
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 20 V, IE = 0
ICB0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
IEB0
–
–
100
DC current gain
IC = 25 mA, VCE = 5 V
hFE
30
100
–
–
Collector-emitter saturation voltage
IC = 50 mA, IB = 5 mA
VCEsat
–
0.2
0.5
V
µA
BFR 93P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
–
–
5
4.7
–
–
AC Characteristics
Transition frequency
IC = 30 mA, VCE = 5 V, f = 200 MHz
IC = 50 mA, VCE = 5 V, f = 200 MHz
fT
GHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
–
0.6
0.75
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cce
–
0.28
–
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
–
2.1
–
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
–
0.9
–
Noise figure
IC = 10 mA, VCE = 8 V, f = 10 MHz,ZS = 75 Ω
IC = 5 mA, VCE = 8 V, f = 500 MHz,ZS = ZSopt
IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω
F
–
–
–
1.7
1.9
2.4
–
–
–
Power gain
IC = 25 mA, VCE = 8 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–
13
–
Transducer gain
IC = 25 mA, VCE = 8 V, f = 500 MHz, Z0 = 50 Ω
I S21e I 2
–
15.8
–
Linear output voltage
two-tone intermodulation test
IC = 25 mA, VCE = 8 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω
Vo1 = Vo2 –
240
–
mV
Third order intercept point
IC = 25 mA, VCE = 8 V, f = 800 MHz
IP3
–
30.5
–
dBm
pF
dB
BFR 93P
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on alumina
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1 MHz
Transition frequency fT = f (IC)
VCE = 5 V, f = 200 MHz
BFR 93P
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
GHz
dB
dB
Γopt
RN
N
F50 Ω
G p(F50Ω)
ANG
Ω
–
dB
dB
(ZS = 150 Ω)
–
–
1.6
–
(ZS = 90 Ω)
(ZS = ZSopt)
–
–
–
–
1.7
2.4
–
–
MAG
IC = 2 mA, VCE = 8 V, Z0 = 50 Ω
0.01
1.0
–
IC = 10 mA, VCE = 8 V, Z0 = 50 Ω
0.01
0.8
1.5
2.3
–
–
Noise figure F = f (ZS)
VCE = 8 V, f = 10 MHz
Noise figure F = f (IC)
VCE = 8 V, f = 800 MHz, ZLopt (G)
BFR 93P
Common Emitter S Parameters
f
S11
GHz
MAG
S21
ANG
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
12.96
7.50
5.13
3.35
2.71
2.32
2.05
1.84
1.64
1.52
143
113
97
78
72
65
59
52
47
42
0.03
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
70
55
55
57
59
60
62
61
61
61
0.87
0.65
0.54
0.48
0.48
0.46
0.45
0.45
0.45
0.44
– 14
– 31
– 33
– 32
– 35
– 38
– 41
– 46
– 49
– 52
IC = 5 mA, VCE = 8 V, Z0 = 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.74
0.51
0.40
0.32
0.31
0.31
0.31
0.32
0.33
0.35
– 34
– 92
– 125
– 157
– 171
177
166
156
146
137
S11, S22 = f (f)
IC = 5 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 5 mA, VCE = 8 V, Z0 = 50 Ω
BFR 93P
Common Emitter S Parameters (continued)
f
S11
GHz
MAG
S21
ANG
MAG
S12
S22
ANG
MAG
ANG
MAG
ANG
133
105
90
76
70
64
58
52
48
43
0.03
0.05
0.07
0.10
0.13
0.15
0.17
0.20
0.22
0.24
68
60
63
65
65
64
64
62
61
60
0.77
0.53
0.45
0.41
0.40
0.39
0.38
0.38
0.38
0.36
– 19
– 32
– 32
– 31
– 34
– 37
– 40
– 44
– 47
– 49
IC = 10 mA, VCE = 8 V, Z0 = 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.58
0.37
0.30
0.25
0.25
0.26
0.26
0.28
0.29
0.31
– 49
– 108
– 139
– 170
180
169
160
151
142
133
18.73
9.17
5.92
3.85
3.09
2.63
2.33
2.07
1.84
1.72
S11, S22 = f (f)
IC = 10 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 10 mA, VCE = 8 V, Z0 = 50 Ω
BFR 93P
Common Emitter S Parameters (continued)
f
S11
GHz
MAG
S21
ANG
MAG
S12
S22
ANG
MAG
ANG
MAG
ANG
123
98
86
74
69
63
57
51
47
42
0.02
0.05
0.07
0.11
0.13
0.16
0.18
0.20
0.23
0.25
67
66
68
68
68
66
66
63
61
60
0.67
0.46
0.40
0.37
0.37
0.35
0.35
0.35
0.35
0.33
– 22
– 30
– 30
– 28
– 32
– 35
– 38
– 43
– 46
– 48
IC = 20 mA, VCE = 8 V, Z0 = 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.41
0.28
0.25
0.23
0.23
0.25
0.25
0.27
0.28
0.30
– 64
– 123
– 151
– 179
172
164
155
147
139
131
22.91
9.89
6.24
4.03
3.22
2.74
2.41
2.14
1.92
1.79
S11, S22 = f (f)
IC = 20 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 20 mA, VCE = 8 V, Z0 = 50 Ω
BFR 93P
Common Emitter S Parameters (continued)
f
S11
GHz
MAG
S21
ANG
MAG
S12
S22
ANG
MAG
ANG
MAG
ANG
120
97
85
73
68
62
57
51
47
42
0.02
0.05
0.07
0.11
0.13
0.16
0.18
0.20
0.23
0.25
67
67
70
69
68
66
66
63
62
60
0.64
0.44
0.39
0.37
0.37
0.36
0.36
0.35
0.35
0.34
– 22
– 29
– 28
– 27
– 31
– 35
– 37
– 42
– 46
– 48
IC = 25 mA, VCE = 8 V, Z0 = 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.37
0.26
0.24
0.22
0.23
0.24
0.25
0.27
0.28
0.30
– 68
– 127
– 154
179
170
162
153
146
138
130
23.71
9.89
6.20
3.98
3.18
2.71
2.37
2.11
1.89
1.77
S11, S22 = f (f)
IC = 25 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 25 mA, VCE = 8 V, Z0 = 50 Ω