PD - 96894
IRFB4310
IRFS4310
IRFSL4310
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best RDS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID
D
G
S
G DS
G DS
G DS
D2Pak
TO-220AB
IRFB4310
100V
5.6m:
7.0m:
140A
TO-262
IRFSL4310
IRFS4310
Absolute Maximum Ratings
Max.
Units
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
Parameter
140c
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
97 c
IDM
Pulsed Drain Current d
550
PD @TC = 25°C
Maximum Power Dissipation
330
W
Linear Derating Factor
2.2
VGS
Gate-to-Source Voltage
± 20
W/°C
V
dV/dt
TJ
Peak Diode Recovery f
14
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
V/ns
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR
Avalanche Currentc
EAR
Repetitive Avalanche Energy g
mJ
980
See Fig. 14, 15, 22a, 22b,
A
mJ
Thermal Resistance
Typ.
Max.
RθJC
Symbol
Junction-to-Case k
–––
0.45
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
RθJA
Junction-to-Ambient, TO-220 k
RθJA
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Parameter
2
Junction-to-Ambient (PCB Mount) , D Pak jk
–––
62
–––
40
Units
°C/W
1
11/3/04
IRF/B/S/SL4310
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
V
Conditions
100
–––
–––
VGS = 0V, ID = 250µA
–––
0.064
–––
V/°C Reference to 25°C, ID = 1mAd
–––
5.6
7.0
mΩ VGS = 10V, ID = 75A g
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 100V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
Gate Input Resistance
–––
1.4
–––
Ω
f = 1MHz, open drain
RG
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Forward Transconductance
160
–––
–––
S
Total Gate Charge
–––
170
250
nC
Qgs
Gate-to-Source Charge
–––
46
–––
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
62
–––
VGS = 10V g
td(on)
Turn-On Delay Time
–––
26
–––
tr
Rise Time
–––
110
–––
ID = 75A
td(off)
Turn-Off Delay Time
–––
68
–––
RG = 2.6Ω
tf
Fall Time
–––
78
–––
Ciss
Input Capacitance
–––
7670
–––
Coss
Output Capacitance
–––
540
–––
VDS = 50V
Crss
Reverse Transfer Capacitance
–––
280
–––
ƒ = 1.0MHz
650
–––
VGS = 0V, VDS = 0V to 80V j, See Fig.11
720.1
–––
VGS = 0V, VDS = 0V to 80V h, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related)i –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––
ns
VDS = 50V, ID = 75A
ID = 75A
VDD = 65V
VGS = 10V g
pF
VGS = 0V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 140c
ISM
(Body Diode)
Pulsed Source Current
–––
–––
VSD
(Body Diode)di
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
45
68
ns
–––
55
83
Qrr
Reverse Recovery Charge
–––
82
120
–––
120
180
–––
3.3
–––
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.35mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
A
Conditions
MOSFET symbol
showing the
integral reverse
550
G
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V g
VR = 85V,
TJ = 25°C
TJ = 125°C
nC
D
TJ = 25°C
S
IF = 75A
di/dt = 100A/µs g
TJ = 125°C
A
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
www.irf.com
IRF/B/S/SL4310
1000
1000
100
BOTTOM
10
BOTTOM
100
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1
1
10
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current(Α)
≤ 60µs PULSE WIDTH
Tj = 175°C
10
1
100
TJ = 175°C
10
TJ = 25°C
VDS = 50V
≤ 60µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
7.0
ID = 75A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
8.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
12000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
8000
6000
4000
2000
Coss
Crss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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ID= 75A
VDS = 80V
16
VDS= 50V
VDS= 20V
12
8
4
0
0
1
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
IRF/B/S/SL4310
1000.0
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
TJ = 175°C
100.0
10.0
TJ = 25°C
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100
100µsec
10
1
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
LIMITED BY PACKAGE
ID , Drain Current (A)
120
100
80
60
40
20
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage
140
50
100
1000
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
10
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
120
115
110
105
100
-60 -40 -20
TC , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
2400
EAS, Single Pulse Avalanche Energy (mJ)
4.0
3.5
3.0
Energy (µJ)
10msec
DC
0.1
0.1
2.5
2.0
1.5
1.0
0.5
0.0
ID
12A
17A
BOTTOM 75A
TOP
2000
1600
1200
800
400
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
120
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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IRF/B/S/SL4310
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τC
τ
Ri (°C/W) τi (sec)
0.1962 0.00117
0.2542
τ2
0.016569
Ci= τi/Ri
Ci i/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
1000
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
IRF/B/S/SL4310
20
ID = 1.0A
ID = 1.0mA
16
ID = 250µA
4.0
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
5.0
3.0
12
8
IF = 30A
VR = 85V
2.0
4
TJ = 125°C
TJ = 25°C
1.0
0
-75
-50 -25
0
25
50
75
100 125 150 175
100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( °C )
dif / dt - (A / µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
20
500
16
400
QRR - (nC)
IRRM - (A)
Fig 16. Threshold Voltage Vs. Temperature
12
8
4
0
IF = 45A
VR = 85V
300
200
IF = 30A
VR = 85V
100
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
500
QRR - (nC)
400
300
200
100
IF = 45A
VR = 85V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRF/B/S/SL4310
D.U.T
Driver Gate Drive
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
A
0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD
Fig 22b. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
Fig 23a. Switching Time Test Circuit
tr
td(off)
tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
www.irf.com
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
7
IRF/B/S/SL4310
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
2
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
3X
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
TO-220AB packages are not recommended for Surface Mount Application.
8
www.irf.com
IRF/B/S/SL4310
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN THE ASS EMBLY LINE "C"
Note: "P" in as sembly line
pos ition indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNATIONAL
RECTIFIER
LOGO
AS SEMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS SEMBLY SITE CODE
9
IRF/B/S/SL4310
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
T HIS IS AN IRF530S WITH
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN T HE AS S EMBLY LINE "L"
Note: "P" in assembly line
pos ition indicates "Lead-Free"
OR
INT ERNAT IONAL
RECT IFIER
LOGO
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
AS S EMBLY
LOT CODE
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
10
PART NUMBER
PART NUMBER
F530S
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS S EMBLY S IT E CODE
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IRF/B/S/SL4310
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
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11