EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package Applications • Mobile Infrastructure • Final stage amplifiers for Repeaters • Defense / Homeland Security The EC1089 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power. It is housed in an industry standard lead-free/green/RoHScompliant SOT-89 package. All devices are 100% RF and DC tested. The EC1089 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the EC1089 to maintain high linearity over temperature and operate directly off a single +5 V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. 1 2 3 RF IN GND RF OUT Function Input Output/Bias Ground Pin No. 1 3 2, 4 Typical Performance (3) Specifications (1) Parameters 4 Units Min MHz MHz dB dB dB dBm dBm 10 Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Operating Current Range Device Voltage 10.5 +40 Typ Parameters Units Typical 2500 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Supply Bias MHz dB dB dB dBm dBm dB 900 1900 2140 15.5 12.2 11.5 -14 -15 -15 -10 -10 -10 +24 +23.5 +23.5 +40 +41 +40 5.1 5.9 5.4 +5 V @ 160 mA 1900 12.2 15 10 +23.5 +41 dBm +17 dB MHz dB dBm dBm mA V 5.9 2140 11.5 +23.5 +40 160 +5 140 Max 3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I = 160 mA, +25 °C 175 1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, 800 MHz in a tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Not Recommended For New Designs Recommended replacement parts: TQP7M9101 Absolute Maximum Rating Parameter Rating Storage Temperature RF Input Power (continuous) Device Voltage Device Current Junction Temperature Thermal Resistance -65 to +150 °C +18 dBm +6 V 220 mA +220 °C 149 °C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. EC1089B-G Description ¼ Watt, InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com Page 1 of 5 August 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icc = 160 mA, T = 25 °C, unmatched 50 ohm system) S11 Swp Max 3000MHz 2. 0. 4 0. 3. 4 20 2. 0 6 0. 0.8 1.0 S22 0 0. 6 25 Swp Max 3000MHz 1.0 0.8 Gain / Maximum Stable Gain 0 4. 0 3. 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0 DB(|S(2,1)|) DB(GMax()) 10 0.4 10.0 -10. 0 0 .0 .0 .4 -0 .0 -2 Swp Min 50MHz -1.0 -0.8 - -1.0 Swp Min 50MHz -0 .6 0 2. .6 -0 .8 -0 -3 Frequency (MHz) .4 3000 -3 .0 2000 -4 1000 -5. -0 0 2 0 0 -0. 0 2 -4 . -0. -10.0 5 -5. Gain (dB) 0 5.0 0.2 15 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, IDS = 160 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 50 -5.84 -157.07 20.78 151.09 -25.69 17.37 -8.29 250 -3.36 -177.43 15.15 141.44 -23.57 6.90 -5.83 500 -3.07 173.83 13.70 131.20 -23.27 4.16 -5.74 750 -2.91 166.79 12.61 117.86 -22.95 2.86 -5.65 1000 -2.76 159.81 11.62 104.53 -22.54 1.07 -5.50 1250 -2.63 153.18 10.65 92.06 -22.35 -1.30 -5.41 1500 -2.55 146.03 9.64 80.38 -21.73 -2.45 -5.40 1750 -2.46 138.90 8.72 69.61 -21.47 -5.13 -5.32 2000 -2.44 132.69 7.92 59.90 -21.06 -7.78 -5.22 2250 -2.39 126.08 7.11 50.30 -20.91 -10.80 -5.19 2500 -2.33 119.55 6.30 41.62 -20.54 -17.68 -5.18 2750 -2.30 112.75 5.66 32.78 -19.62 -19.18 -5.19 3000 -2.27 105.55 5.02 23.64 -19.51 -24.29 -5.11 S22 (ang) -111.19 -168.30 177.63 169.68 161.89 155.53 148.42 141.74 135.43 128.63 122.48 115.64 108.85 Device S-parameters are available for download off of the website at: http://www.triquint.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper Microstrip line details: width = .026”, spacing = .026” Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com Page 2 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (EC1089B-PCB900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 All passive components are of size 0603 unless otherwise noted. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. L2, L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. +40 dBm (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current PORT P=1 Z=50 Ohm CAP ID=C4 C=56 pF +24 dBm 5.1 dB +5 V 160 mA CAP ID=C3 C=1000 pF 5.6 V size 0805 IND ID=L1 L=33 nH RES ID=R1 R=2.7K Ohm CAP ID=C5 C=56 pF size 0603 SUBCKT ID=U1 NET="EC1089" RES ID=L3 R=0 Ohm CAP ID=C9 C=1 pF ACPR (dBc) 42 41 40 -40°C C9 should be placed between silk screen markers '8' and '9' on the W J evaluation board. Average CDMA ACPR 43 25°C PORT P=2 Z=50 Ohm The capacitor should be placed 19° @ 0.9GHz from pin 3 of the EC1089. The capacitor should be placed 13.7° @ 0.9GHz from pin 1 of the EC1089 OIP3 vs. Frequency OIP3 (dBm) DIODE1 ID=D1 C7 should be placed at the silk screen marker 'F' on the W J evaluation board. 44 +85°C 38 37 600 RES ID=L2 R=0 Ohm CAP ID=C7 C=5.6 pF Measured parameters were taken at 25 °C. 39 CAP ID=C1 C=100000 pF size 1206 CAP ID=C2 C=56 pF Vcc = +5 V 900 MHz 15.5 dB -15 dB -10 dB 700 800 900 1000 Frequency (.9 GHz Matching) 1100 40 45 Note: (IS95) ACPR1 measured at 750KHz, Forward 9 Channel 50 55 60 65 70 75 80 85 10 12 14 16 Average output power (dBm) 18 1900 MHz Application Circuit (EC1089B-PCB1900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current 1900 MHz 12.2 dB -15 dB -10 dB All passive components are of size 0603 unless otherwise noted. The Diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a systemusing a DC regulator. +41 dBm CAP ID=C4 C=56 pF AMP EC1089 C9 should be placed at the silk screen marker "6" on the WJ evaluation board. The capacitor should be placed 29° @ 1.9GHz from pin 3. Average CDMA ACPR ACPR (dBc) 43 dBm CAP ID=C9 C=1.2 pF The capacitor should be placed 4.6° @ 1.9GHz from pin 1.of the EC1089 45 41 39 37 1800 CAP ID=C5 C=56 pF RES ID=L3 R=0 kOhm C7 should be placed at the silk screen marker "A" on the WJ evaluation board. OIP3 vs. Temperature vs. Frequency 1700 CAP ID=C1 C=56 pF IND ID=L1 L=18 nH RES ID=L2 R=0 kOhm CAP ID=C7 C=2.4 pF Measured parameters were taken at 25 °C. 25°C DIODE1 ID=D1 5.6 V L2, L3 - the 0 ohmresistor - can be removed (with a thru line) in the final circuit layout. RES ID=R1 R=2.7 kOhm +23.5 dBm 5.9 dB +5 V 160 mA 35 1600 CAP ID=C3 C=1e5 pF size 1206 CAP ID=C2 C=1000 pF size 0805 Vcc = +5 V -40°C 1900 Frequency (MHz) 85°C 2000 2100 40 45 Note: (IS95) ACPR1 measured at 750KHz, Forward 9 Channel 50 55 60 65 70 75 80 85 10 12 14 16 Average output power (dBm) 18 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com Page 3 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (EC1089B-PCB2140) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+10 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current 2140 MHz 11.5 dB -15 dB -10 dB +40 dBm +23.5 dBm 5.4 dB +5 V 160 mA Measured parameters were taken at 25 °C. CAP ID=C1 C=100000 pF size 1206 Vcc = +5 V All passive components are of size 0603 unless otherwise noted. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. Component R1 is shown in the silkscreen but is not used for this configuration. CAP ID=C4 C=56 pF CAP ID=C6 C=1.5 pF CAP ID=C3 C=1000 pF 5.6 V L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. PORT P=1 Z=50 Ohm CAP ID=C2 C=56 pF DIODE1 ID=D1 IND ID=L1 L=18 nH RES CAP ID=L2 ID=R1 C=1.5 pF R=2.7K Ohm SUBCKT ID=U1 NET="EC1089" size 0805 CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm RES ID=L3 R=0 Ohm C6 should be placed at the silk screen marker 'F' on the WJ evaluation board. The capacitor should be placed 32.6° @ 2.14GHz from pin 1 of the EC1089 CAP ID=C9 C=.8 pF C9 should be placed at silk screen marker '6' on the WJ evaluation board. The capacitor should be placed 39° @ 2.14GHz from pin 3 of the EC1089. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com Page 4 of 5 June 2011 EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier EC1089B-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an “1089G” designator with a lot code marked below the part designator on the top surface of the package. The “Y” represents the last digit of the year the part was manufactured, the “XXX” is an auto-generated number and “Z” refers to a wafer number. 1089G Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: [email protected] • Web site: www.TriQuint.com Page 5 of 5 June 2011