FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. D D -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current -9 A - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation -50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range W 1 -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS4435A FDS4435A 13’’ 12mm 2500 units ã2001 Fairchild Semiconductor Corporation FDS4435A Rev. D FDS4435A October 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward -1 -10 100 µA IGSSF VDS = -24 V, VGS = 0 TJ = 125°C VGS = 20 V, VDS = 0 V IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics -30 V -26 mV/°C nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C Static Drain-Source On-Resistance VGS = -10 V, ID = -9 A -1 -1.7 -2 4.2 TJ = 125°C VGS = -4.5 V, ID = -7 A V mV/°C 0.015 0.017 0.021 0.030 0.023 0.025 -40 Ω ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -10 V, ID = -9 A 25 A S VDS = -15 V, VGS = 0 V f = 1.0 MHz 2010 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 590 pF 260 pF (Note 2) VDD = -15 V, ID = -1 A VGS = -10 V, RGEN = 6 Ω 12 22 ns 15 27 ns Turn-Off Delay Time 100 140 ns Turn-Off Fall Time 55 80 ns 21 30 nC VDS = -15 V, ID = -9 A VGS = -5 V, 6 nC 8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A -2.1 trr Source-Drain Reverse Recovery Time IF = -10 A, dlF/dt = 100 A/µS (Note 2) A 0.75 -1.2 V 36 80 ns Notes: 1: RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% FDS4435A Rev. D FDS4435A Electrical Characteristics FDS4435A Typical Characteristics 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE - I D, DRAIN-SOURCE CURRENT (A) VGS= -10V -6.0V -4.5V -4.0V -3.5V -3.0V -2.5V 2.2 VGS = -3.5V 2 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V -10V 1 0.8 0 -V DS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.07 1.6 RDS(ON), ON RESISTANCE (OHM) VGS = -10V ID = -9A 1.4 1.2 1 0.8 ID = -4.5A 0.06 0.05 0.04 O 0.03 TJ = 125 C 0.02 O TJ = 25 C 0.01 0 0.6 -50 -25 0 25 50 75 100 125 2 150 4 TJ, JUNCTION TEMPERATURE (OC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 40 TJ = -55 C -IS, REVERSE DRAIN CURRENT (A) O VDS = -5V -ID, DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics NORMALIZED ON-RESISTANCE 10 O 25 C O 30 125 C 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDS4435A Rev. D (continued) 2500 ID = -8.8A f = 1 MHz VGS = 0 V VDS = -5V -10V 8 2000 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 CISS 1500 1000 2 500 0 0 COSS CRSS 0 5 10 15 20 25 30 35 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics Figure 7. Gate-Charge Characteristics 50 100 RDS(ON) LIMIT SINGLE PULSE RθJA =125°C/W TA = 25°C 100µs 40 1ms 10 POWER (W) 10ms 100ms 1s 10s 1 DC VGS = -10V SINGLE PULSE o RθJA = 125 C/W 0.1 30 20 10 o TA = 25 C 0.01 0.1 1 10 0 0.001 100 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area TR ANSI ENT TH ER MAL RESISTANC E -ID, DRAIN CURRENT (A) FDS4435A Typical Characteristics 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 10. Single Pulse Maximum Power Dissipation 1 0.5 0.2 0.1 0.05 D = 0.5 R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W 0.2 0.1 00 .5 P(pk ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RθJA ( t) 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 1 10 100 300 t 1, TI M E (s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS4435A Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4