Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on--chip matching that makes it usable from 2110 -- 2170 MHz. This multi -- stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc, Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) Output PAR (dB) ACPR (dBc) 2110 MHz 28.8 38.2 7.1 --34.6 2140 MHz 29.0 37.9 7.1 --36.2 2170 MHz 29.2 37.4 6.9 --36.1 MD7IC2251NR1 MD7IC2251GNR1 2110--2170 MHz, 12 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270 WB--14 PLASTIC MD7IC2251NR1 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1) Features TO--270 WB--14 GULL PLASTIC MD7IC2251GNR1 • 100% PAR Tested for Guaranteed Output Power Capability • • • • • • • Production Tested in a Symmetrical Doherty Configuration Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) Integrated ESD Protection 225°C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. VDS1A CARRIER (3) RFinA VGS1A VGS2A VGS1B VGS2B RFout1/VDS2A Quiescent Current Temperature Compensation (2) Quiescent Current Temperature Compensation (2) PEAKING (3) RFinB RFout2/VDS2B VDS1A VGS2A VGS1A RFinA NC NC NC NC RFinB VGS1B VGS2B VDS1B Carrier 1 2 14 3 4 5 6 7 8 9 13 10 11 12 Peaking RFout1/VDS2A RFout2/VDS2B (Top View) Note: Exposed backside of the package is the source terminal for the transistors. VDS1B Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. 3. Peaking and Carrier orientation is determined by the test fixture design. © Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MD7IC2251NR1 MD7IC2251GNR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 28 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Final Doherty Application RθJC Thermal Resistance, Junction to Case Case Temperature 78°C, Pout = 12 W CW Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA Stage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc Case Temperature 89°C, Pout = 50 W CW Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA Stage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc °C/W 4.8 1.5 3.7 1.0 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 80 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1(A+B) = 80 mAdc, Measured in Functional Test) VGG(Q) 6.0 7.0 8.0 Vdc Characteristic Stage 1 -- Off Characteristics (4) Stage 1 -- On Characteristics (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) MD7IC2251NR1 MD7IC2251GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = 260 mAdc) VGSA(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = 260 mAdc, Measured in Functional Test) VGGA(Q) 5.5 6.3 7.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.1 0.24 1.2 Vdc Stage 2 -- Off Characteristics (1) Stage 2 -- On Characteristics (1) Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc, Pout = 12 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 27.6 28.2 32.0 dB Power Added Efficiency PAE 33.5 36.9 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.2 6.6 — dB ACPR — --34.2 --31.5 dBc Adjacent Channel Power Ratio Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc, Pout = 12 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 1. 2. 3. 4. Frequency Gps (dB) PAE (%) Output PAR (dB) ACPR (dBc) 2110 MHz 28.8 38.2 7.1 --34.6 2140 MHz 29.0 37.9 7.1 --36.2 2170 MHz 29.2 37.4 6.9 --36.1 Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 40 — W Pout @ 3 dB Compression Point (2) P3dB — 58 — W IMD Symmetry @ 18 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 25 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 65 — MHz — — 1.5 5.0 — — Quiescent Current Accuracy over Temperature with 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (3) Stage 1 Stage 2 ∆IQT % Gain Flatness in 60 MHz Bandwidth @ Pout = 12 W Avg. GF — 0.2 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.028 — dB/°C ∆P1dB — 0.028 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) 1. Measurement made with device in a Symmetrical Doherty configuration. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. MD7IC2251NR1 MD7IC2251GNR1 4 RF Device Data Freescale Semiconductor, Inc. VGS1A VGS2A VDS2A VDS1A C1 R2 C23 R1 C9 C7 C13 C3 C19 C15 CUT OUT AREA C16 Z1 R5 C17 C20 R3 C22 C4 C11 C P C18 C5 C8 C21 C12 C10 C6 C14 MD7IC2251N Rev. 1 R4 C2 VGS1B VGS2B VDS2B VDS1B Figure 3. MD7IC2251NR1(GNR1) Production Test Circuit Component Layout Table 6. MD7IC2251NR1(GNR1) Production Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6 10 μF Chip Capacitors GRM55DR61H106KA88L Murata C7, C8 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC C9, C10 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC C11, C12 39 pF Chip Capacitors ATC600F390JT250XT ATC C13, C14, C15, C16, C17, C18 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata C19, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC C21 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC C22, C23 1.0 μF Chip Capacitors GRM31CR71H105KA12L Murata R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay R5 50 Ω, 10 W, Termination RFP-06012A15Z50 Anaren Z1 2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler GSC355-HYB2150 Soshin PCB 0.020″, εr = 3.5 RF-35A2 Taconic MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 5 VGS1A VGS2A VDS2A VDS1A C1 R2 C23 R1 C9 C7 C13 C3 C16 Z1 R5 C17 C20 R3 C22 C4 C11 CUT OUT AREA C19 C15 C P C18 C5 C8 C21 C12 C10 C6 C14 MD7IC2251N Rev. 1 R4 C2 VGS1B VGS2B VDS2B VDS1B Figure 4. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Layout Table 7. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6 10 μF Chip Capacitors GRM55DR61H106KA88L Murata C7, C8 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC C9, C10 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC C11, C12 39 pF Chip Capacitors ATC600F390JT250XT ATC C13, C14, C15, C16, C17, C18 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata C19, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC C21 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC C22, C23 1.0 μF Chip Capacitors GRM31CR71H105KA12L Murata R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay R5 50 Ω, 10 W, Termination RFP-06012A15Z50 Anaren Z1 2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler GSC355-HYB2150 Soshin PCB 0.020″, εr = 3.5 RF-35A2 Taconic MD7IC2251NR1 MD7IC2251GNR1 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, Pout = 12 W (Avg.) IDQ1(A+B) = 80 mA, IDQ2A = 260 mA VGS2B = 1.4 Vdc, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Gps, POWER GAIN (dB) 30.2 29.8 29.4 29 35 33 31 Gps Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 28.6 37 --30 0 --32 --1 28.2 ACPR --34 27.8 --36 27.4 PARC --38 27 2060 2080 2100 2120 2140 2160 2180 2200 --40 2220 --2 --3 --4 PARC (dB) 39 PAE ACPR (dBc) 31 30.6 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS --5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 12 Watts Avg. --20 IM3--L --30 IM3--U --40 IM5--U IM5--L --50 VDD = 28 Vdc, Pout = 18 W (PEP) IDQ1(A+B) = 80 mA, IDQ2A = 260 mA --60 --70 VGS2B = 1.4 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 1 IM7--U IM7--L 100 10 TWO--TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Two--Tone Spacing 27 26 25 24 --1 --2 --3 --4 --3 dB = 12.5 W --5 --6 46 --1 dB = 7.2 W --2 dB = 9.9 W ACPR 42 VDD = 28 Vdc, IDQ1(A+B) = 80 mA IDQ2A = 260 mA, VGS2B = 1.4 Vdc f = 2140 MHz, Single--Carrier W--CDMA 5 10 15 20 38 34 30 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --20 50 PAE PARC 26 25 --25 --30 --35 ACPR (dBc) 28 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 29 Gps PAE, POWER ADDED EFFICIENCY (%) 0 30 --40 --45 --50 30 Pout, OUTPUT POWER (WATTS) Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 30 ACPR PAE 29 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB 28 @ 0.01% Probability on CCDF 2140 MHz 60 50 40 2110 MHz 2170 MHz 2110 MHz 27 20 2140 MHz 2170 MHz 26 Gps 10 0 100 25 10 1 30 --20 --25 --30 ACPR (dBc) VDD = 28 Vdc, IDQ1(A+B) = 80 mA IDQ2A = 260 mA, VGS2B = 1.4 Vdc PAE, POWER ADDED EFFICIENCY (%) 31 --35 --40 --45 --50 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 36 30 Gain GAIN (dB) 24 18 VDD = 28 Vdc Pin = 0 dBm IDQ1(A+B) = 80 mA IDQ2A = 260 mA VGS2B = 1.4 Vdc 12 6 0 1800 1900 2000 2100 2200 2300 2400 2500 2600 f, FREQUENCY (MHz) Figure 9. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 2 4 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 PEAK--TO--AVERAGE (dB) Figure 10. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 12 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 11. Single--Carrier W--CDMA Spectrum MD7IC2251NR1 MD7IC2251GNR1 8 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW Max Output Power P1dB P3dB f (MHz) Zin (Ω) Zload (1) (Ω) (dBm) (W) PAE (%) (dBm) (W) PAE (%) 2110 68.0 – j42.0 7.20 – j14.0 45.8 38 52.2 46.4 44 53.1 2140 60.6 – j37.0 7.40 – j14.4 45.7 37 51.9 46.4 44 52.7 2170 54.0 – j31.0 7.30 – j14.7 45.7 37 51.6 46.4 44 52.2 (1) Load impedance for optimum P1dB power. Zin = Impedance as measured from input contact to ground. Zload = Impedance as measured from drain contact to ground. Output Load Pull Tuner Device Under Test Zload Zin Figure 12. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW Max Power Added Efficiency P1dB P3dB f (MHz) Zin (Ω) Zload (1) (Ω) (dBm) (W) PAE (%) (dBm) (W) PAE (%) 2110 60.0 – j53.0 9.10 – j8.80 44.4 28 58.1 45.0 32.0 57.6 2140 54.0 – j46.0 8.20 – j9.10 44.4 28 57.6 44.9 31.0 57.0 2170 48.0 – j39.0 7.90 – j9.60 44.4 28 57.4 45.0 32.0 56.7 (1) Load impedance for optimum P1dB efficiency. Zin = Impedance as measured from input contact to ground. Zload = Impedance as measured from drain contact to ground. Output Load Pull Tuner Device Under Test Zin Zload Figure 13. Carrier Side Load Pull Performance — Maximum Power Added Efficiency Tuning MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS MD7IC2251NR1 MD7IC2251GNR1 10 RF Device Data Freescale Semiconductor, Inc. MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 11 MD7IC2251NR1 MD7IC2251GNR1 12 RF Device Data Freescale Semiconductor, Inc. MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 13 MD7IC2251NR1 MD7IC2251GNR1 14 RF Device Data Freescale Semiconductor, Inc. MD7IC2251NR1 MD7IC2251GNR1 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2012 Description • Initial Release of Data Sheet MD7IC2251NR1 MD7IC2251GNR1 16 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/Freescale/Docs/TermsandConditions.htm. Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire, C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack, ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge, QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2012 Freescale Semiconductor, Inc. MD7IC2251NR1 MD7IC2251GNR1 Document Number: RF Device Data MD7IC2251N Rev. 0, 5/2012 Freescale Semiconductor, Inc. 17