APT19F100J 1000V, 19A, 0.46Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT19F100J Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 19 Continuous Drain Current @ TC = 100°C 12 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 16 A 1 120 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 460 RθJC Junction to Case Thermal Resistance 0.27 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m 3-2007 TJ,TSTG 0.15 Rev B Min Characteristic 050-8080 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 1000 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1000V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Min Test Conditions VDS = 50V, ID = 16A f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 34 8500 115 715 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related µA nA Unit S pF 290 VGS = 0V, VDS = 0V to 667V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf 0.46 5 Unit V V/°C Ω V mV/°C TJ = 25°C unless otherwise specified 4 td(off) Max 250 1000 ±100 TJ = 125°C VGS = ±30V Co(cr) tr 0.39 4 -10 TJ = 25°C VGS = 0V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient Typ 1.15 VGS = 10V, ID = 16A 3 IDSS Symbol Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) APT19F100J 150 260 46 125 36 37 140 VGS = 0 to 10V, ID = 16A, VDS = 500V Resistive Switching VDD = 667V, ID = 16A Current Rise Time RG = 2.2Ω 6 , VGG = 15V Turn-Off Delay Time Current Fall Time nC ns 35 Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Peak Recovery dv/dt Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage trr dv/dt Test Conditions A 120 S 1.1 290 600 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit 19 G ISD = 16A, TJ = 25°C, VGS = 0V ISD = 16A 3 Max TJ = 125°C ISD ≤ 16A, di/dt ≤1000A/µs, VDD = 667V, TJ = 125°C 1.3 3.5 10.6 14.2 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 14.65mH, RG = 2.2Ω, IAS = 16A. 050-8080 Rev B 3-2007 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 80 V GS = 10V 25 TJ = -55°C 60 ID, DRIAN CURRENT (A) 50 40 TJ = 25°C 30 20 TJ = 125°C 10 V 15 5V 10 5 TJ = 150°C 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 NORMALIZED TO 2.0 1.5 1.0 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 TJ = -55°C 60 TJ = 25°C 40 TJ = 125°C 20 0.5 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 45 Ciss 10,000 40 35 TJ = -55°C 30 C, CAPACITANCE (pF) TJ = 25°C 25 TJ = 125°C 20 15 10 1000 Coss 100 Crss 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 16 12 8 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 4 1000 800 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 200V 10 VDS = 500V 8 6 VDS = 800V 4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 120 ID = 16A 14 0 10 20 100 80 60 TJ = 25°C 40 TJ = 150°C 20 0 1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 3-2007 0 ISD, REVERSE DRAIN CURRENT (A) 0 Rev B gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 100 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 120 VGS = 10V @ 16A 2.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics 3.0 = 6, 7, 8 & 9V GS 20 050-8080 ID, DRAIN CURRENT (A) T = 125°C J 70 0 APT19F100J 30 APT19F100J 200 200 100 100 IDM DM ID, DRAIN CURRENT (A) 10 13µs 100µs 1ms 1 0.1 Rds(on) 10ms Scaling for Different Case & Junction Temperatures: ID = ID(T = 25 C)*(TJ - TC)/125 DC line 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 13µs 100µs 1ms 10ms 100ms DC line TJ = 150°C TC = 25°C 1 100ms TJ = 125°C TC = 75°C 1 Rds(on) 10 C ° 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area TJ (°C) TC (°C) 0.0260 0.0584 0.185 Dissipated Power (Watts) 0.00119 0.0354 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT ID, DRAIN CURRENT (A) I 0.463 Figure 11, Transient Thermal Impedance Model 0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 t1 t2 t1 = Pulse Duration t SINGLE PULSE 0.05 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3-2007 14.9 (.587) 15.1 (.594) Rev B 3.3 (.129) 3.6 (.143) 38.0 (1.496) 38.2 (1.504) 050-8080 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.