ON CPH6904 N-channel jfet 25v, 20 to 40ma, 40ms, dual cph6 Datasheet

Ordering number : ENA1966A
CPH6904
N-Channel JFET
http://onsemi.com
25V, 20 to 40mA, 40mS, Dual CPH6
Features
•
•
Composite type with 2 J-FET contained in a CPH6 package currently in use, improving the mounting efficiency
greatly
The CPH6904 is formed with two chips, being equivalent to the CPH3910, placed in one package
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSX
VGDS
Gate-to-Source Voltage
Gate Current
25
IG
ID
Drain Current
Allowable Power Dissipation
1unit
V
--25
V
10
mA
50
mA
400
mW
700
mW
Total Power Dissipation
PD
PT
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-015
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
4
1P
1.6
2.8
0.05
LOT No.
5
0.2
0.6
6
CPH6904-TL-E
0.15
2.9
0.9
0.2
0.6
TL
1
2
0.95
3
0.4
1 : Drain1
2 : NC
3 : Drain2
4 : Gate2
5 : Source1/Source2
6 : Gate1
Electrical Connection
6
5
4
1
2
3
CPH6
Semiconductor Components Industries, LLC, 2013
August, 2013
62012 TKIM/11112AC TKIM TC-00002641 No. A1966-1/6
CPH6904
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
Ratings
Conditions
min
typ
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
--25
VDS=5V, ID=100μA
--0.6
VDS=5V, VGS=0V
20.0
Unit
max
V
--1.0
VDS=5V, VGS=0V, f=1kHz
30
VDS=5V, VGS=0V, f=1MHz
--1.2
--1.8
V
40.0
mA
40
mS
6.0
pF
2.3
VDS=5V, VGS=0V, f=100MHz
nA
2.1
pF
2.8
dB
The specifications shown above are for each individual J-FET.
Ordering Information
Device
CPH6904-TL-E
Package
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
ID -- VDS
30
20
--0.2V
15
--0.4V
10
--0.6V
Drain Current, ID -- mA
Drain Current, ID -- mA
35
V
V GS=0
25
VGS=0V
30
--0.2V
25
20
--0.4V
15
--0.6V
10
--0.8V
5
0
0
ID -- VDS
40
--0.8V
--1.0V
0.5
1.0
1.5
Drain-to-Source Voltage, VDS -- V
2.0
IT16677
5
--1.0V
0
0
2
4
6
8
Drain-to-Source Voltage, VDS -- V
10
IT16678
No. A1966-2/6
CPH6904
ID -- VGS
50
45
15
20
5
--1.5
--1.0
--0.5
0
3
2
10
7
5
3
2
2
3
5
7
10
2
5
3
Drain Current, ID -- mA
3
2
1.0
7
5
3
0.5
IT16680
5
3
2
2
10
3
5
7
Drain Current, IDSS -- mA
Ciss -- VDS
10
100
IT16682
VGS=0V
f=1MHz
7
Input Capacitance, Ciss -- pF
5
7
100
IT16681
VDS=5V
ID=100μA
7
0
VDS=5V
VGS=0V
f=1kHz
10
7
VGS(off) -- IDSS
10
--0.5
| yfs | -- IDSS
100
VDS=5V
f=1kHz
IDSS=30mA
1.0
1.0
--1.0
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- mS
5
--1.5
IT16679
| yfs | -- ID
7
0
--2.0
0.5
25
°C
15
5
5
3
2
2
0.1
2
10
3
5
7
Drain Current, IDSS -- mA
VGS=0V
f=1MHz
7
5
3
2
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
100
IT16685
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
Crss -- VDS
10
1.0
1.0
1.0
1.0
100
IT16683
Allowable Power Dissipation, PD, PT -- mW
Forward Transfer Admittance, | yfs | -- mS
25
10
Gate-to-Source Voltage, VGS -- V
Cutoff Voltage, VGS(off) -- V
30
10
0
--2.0
Reverse Transfer Capacitance, Crss -- pF
35
Ta=
Drain Current, ID -- mA
20
30
20
mA
S =4
25
mA
0m
A
30
ID
S
Drain Current, ID -- mA
35
--25
°C
40
40
100
ID -- VGS
VDS=5V
75
°C
45
50
VDS=5V
PD, PT -- Ta
800
700
5
7 100
IT16684
PT
600
500
400
1unit
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16686
No. A1966-3/6
CPH6904
Embossed Taping Specification
CPH6904-TL-E
No. A1966-4/6
CPH6904
Outline Drawing
CPH6904-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1966-5/6
CPH6904
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PS No. A1966-6/6
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