Ordering number : ENA1966A CPH6904 N-Channel JFET http://onsemi.com 25V, 20 to 40mA, 40mS, Dual CPH6 Features • • Composite type with 2 J-FET contained in a CPH6 package currently in use, improving the mounting efficiency greatly The CPH6904 is formed with two chips, being equivalent to the CPH3910, placed in one package Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSX VGDS Gate-to-Source Voltage Gate Current 25 IG ID Drain Current Allowable Power Dissipation 1unit V --25 V 10 mA 50 mA 400 mW 700 mW Total Power Dissipation PD PT Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7018A-015 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking 4 1P 1.6 2.8 0.05 LOT No. 5 0.2 0.6 6 CPH6904-TL-E 0.15 2.9 0.9 0.2 0.6 TL 1 2 0.95 3 0.4 1 : Drain1 2 : NC 3 : Drain2 4 : Gate2 5 : Source1/Source2 6 : Gate1 Electrical Connection 6 5 4 1 2 3 CPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 62012 TKIM/11112AC TKIM TC-00002641 No. A1966-1/6 CPH6904 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Noise Figure NF Ratings Conditions min typ IG=--10μA, VDS=0V VGS=--10V, VDS=0V --25 VDS=5V, ID=100μA --0.6 VDS=5V, VGS=0V 20.0 Unit max V --1.0 VDS=5V, VGS=0V, f=1kHz 30 VDS=5V, VGS=0V, f=1MHz --1.2 --1.8 V 40.0 mA 40 mS 6.0 pF 2.3 VDS=5V, VGS=0V, f=100MHz nA 2.1 pF 2.8 dB The specifications shown above are for each individual J-FET. Ordering Information Device CPH6904-TL-E Package Shipping memo CPH6 3,000pcs./reel Pb Free ID -- VDS 30 20 --0.2V 15 --0.4V 10 --0.6V Drain Current, ID -- mA Drain Current, ID -- mA 35 V V GS=0 25 VGS=0V 30 --0.2V 25 20 --0.4V 15 --0.6V 10 --0.8V 5 0 0 ID -- VDS 40 --0.8V --1.0V 0.5 1.0 1.5 Drain-to-Source Voltage, VDS -- V 2.0 IT16677 5 --1.0V 0 0 2 4 6 8 Drain-to-Source Voltage, VDS -- V 10 IT16678 No. A1966-2/6 CPH6904 ID -- VGS 50 45 15 20 5 --1.5 --1.0 --0.5 0 3 2 10 7 5 3 2 2 3 5 7 10 2 5 3 Drain Current, ID -- mA 3 2 1.0 7 5 3 0.5 IT16680 5 3 2 2 10 3 5 7 Drain Current, IDSS -- mA Ciss -- VDS 10 100 IT16682 VGS=0V f=1MHz 7 Input Capacitance, Ciss -- pF 5 7 100 IT16681 VDS=5V ID=100μA 7 0 VDS=5V VGS=0V f=1kHz 10 7 VGS(off) -- IDSS 10 --0.5 | yfs | -- IDSS 100 VDS=5V f=1kHz IDSS=30mA 1.0 1.0 --1.0 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- mS 5 --1.5 IT16679 | yfs | -- ID 7 0 --2.0 0.5 25 °C 15 5 5 3 2 2 0.1 2 10 3 5 7 Drain Current, IDSS -- mA VGS=0V f=1MHz 7 5 3 2 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16685 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V Crss -- VDS 10 1.0 1.0 1.0 1.0 100 IT16683 Allowable Power Dissipation, PD, PT -- mW Forward Transfer Admittance, | yfs | -- mS 25 10 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V 30 10 0 --2.0 Reverse Transfer Capacitance, Crss -- pF 35 Ta= Drain Current, ID -- mA 20 30 20 mA S =4 25 mA 0m A 30 ID S Drain Current, ID -- mA 35 --25 °C 40 40 100 ID -- VGS VDS=5V 75 °C 45 50 VDS=5V PD, PT -- Ta 800 700 5 7 100 IT16684 PT 600 500 400 1unit 300 200 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16686 No. A1966-3/6 CPH6904 Embossed Taping Specification CPH6904-TL-E No. A1966-4/6 CPH6904 Outline Drawing CPH6904-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1966-5/6 CPH6904 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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