BFN37, BFN39 PNP Silicon High-Voltage Transistors Suitabled for video output stages in TV sets and 4 switching power supplies High breakdown voltage Low collector-emitter saturation voltage 3 Complementary types: BFN36, BFN38 (NPN) 2 1 Type Marking Pin Configuration BFN37 BFN 37 1=B 2=C 3=E 4=C SOT223 BFN39 BFN 39 1=B 2=C 3=E 4=C SOT223 VPS05163 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BFN37 BFN39 VCEO 250 300 Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN37, BFN39 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN37 250 - - BFN39 300 - - BFN37 250 - - BFN39 300 - - 5 - - V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE = 100 µA, IC = 0 Collector cutoff current nA ICBO VCB = 200 V, IE = 0 BFN37 - - 100 VCB = 250 V, IE = 0 BFN39 - - 100 Collector cutoff current µA ICBO VCB = 200 V, IE = 0 , TA = 150 °C BFN37 - - 20 VCB = 250 V, IE = 0 , TA = 150 °C BFN39 - - - - - 100 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - BFN37 40 - - BFN39 30 - - IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA V VCEsat BFN37 - - 0.4 BFN39 - - 0.5 - - 0.9 Base-emitter saturation voltage 1) VBEsat IC = 20 mA, IB = 2 mA 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 BFN37, BFN39 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 100 - MHz Ccb - 2.5 - pF AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 300 V, f = 1 MHz 3 Nov-30-2001 BFN37, BFN39 Collector current I C = f (VBE) Total power dissipation Ptot = f(TS) VCE = 10V BFN 37/39 10 3 1.8 EHP00641 mA W P tot ΙC 1.4 10 2 1.2 5 1 10 1 0.8 5 0.6 10 0 0.4 5 0.2 0 0 15 30 45 60 75 90 105 120 10 -1 °C 150 TS 0 0.5 V 1.0 V BE Permissible pulse load Collector cutoff current ICBO = f (T A) Ptotmax / PtotDC = f (tp ) VCB = 200V 10 3 BFN 37/39 Ptot max 5 Ptot DC 10 4 nA EHP00254 D= tp T tp 10 1 max 10 2 5 typ 10 1 5 5 10 0 10 -6 EHP00644 10 3 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 BFN 37/39 Ι CB0 T 10 2 1.5 10 0 5 10 -5 10 -4 10 -3 10 -2 s 10 -1 10 0 tp 0 50 ˚C 150 100 TA 4 Nov-30-2001 BFN37, BFN39 DC current gain hFE = f (IC ) Transition frequency fT = f (IC) VCE = 10V VCE = 10V 10 3 BFN 37/39 EHP00642 10 3 BFN 37/39 EHP00643 MHz 5 h FE fT 10 2 5 10 2 5 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 10 1 10 0 3 5 10 1 5 10 2 mA 5 10 3 ΙC ΙC 5 Nov-30-2001