ESMT F25L32PA Flash 3V Only 32 Mbit Serial Flash Memory with Dual FEATURES y y Single supply voltage 2.7~3.6V Standard and Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz (100MHz / 172MHz / 200MHz equivalent Dual SPI) y Low power consumption - Active current: 35 mA - Standby current: 30 μ A - Deep Power Down current: 5 μ A y Reliability - 100,000 typical program/erase cycles - 20 years Data Retention y Program - Byte programming time: 7 μ s (typical) - Page programming time: 1.5 ms (typical) Erase - Chip erase time 25 sec (typical) - Block erase time 1 sec (typical) - Sector erase time 90 ms (typical) y Page Programming - 256 byte per programmable page y Lockable 2K bytes OTP security sector y SPI Serial Interface - SPI Compatible: Mode 0 and Mode 3 y End of program or erase detection y Write Protect ( WP ) y Hold Pin ( HOLD ) y All Pb-free products are RoHS-Compliant ORDERING INFORMATION Product ID y Speed Package Comments F25L32PA –50PAG 50MHz 8 lead SOIC 200mil Pb-free F25L32PA –86PAG 86MHz 8 lead SOIC 200mil Pb-free F25L32PA –100PAG 100MHz 8 lead SOIC 200mil Pb-free F25L32PA –50PHG 50MHz 16 lead SOIC 300mil Pb-free F25L32PA –86PHG 86MHz 16 lead SOIC 300mil Pb-free F25L32PA –100PHG 100MHz 16 lead SOIC 300mil Pb-free GENERAL DESCRIPTION The F25L32PA is a 32Megabit, 3V only CMOS Serial Flash memory device. The device supports the standard and Dual Serial Peripheral Interface (SPI). ESMT’s memory devices reliably store memory data even after 100,000 programming and erase cycles. The memory array can be organized into 16,384 programmable pages of 256 byte each. 1 to 256 byte can be programmed at a time with the Page Program instruction. The device features sector erase architecture. The memory array Elite Semiconductor Memory Technology Inc. is divided into 1024 uniform sectors with 4K byte each; 64 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device. The device has Sector, Block or Chip Erase but no page erase. The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. Publication Date: Mar. 2009 Revision: 1.0 1/36 ESMT F25L32PA PIN CONFIGURATIONS 8-PIN SOIC CE 1 8 VDD SO / SIO1 2 7 HOLD WP 3 6 SCK VSS 4 5 SI / SIO0 16-PIN SOIC HOLD 1 16 SCK VDD 2 15 SI / SIO0 NC 3 14 NC NC 4 13 NC NC 5 12 NC NC 6 11 NC CE 7 10 VSS 8 9 WP SO / SIO1 Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 2/36 ESMT F25L32PA PIN DESCRIPTION Symbol Pin Name Functions SCK Serial Clock To provide the timing for serial input and output operations To transfer commands, addresses or data serially into the device. Data is latched on the rising edge of SCK (for Standard mode). / Bidirectional IO pin to transfer commands, addresses or data serially into the device on the rising edge of SCK and read data or status from the device on the falling edge of SCK(for Dual mode). To transfer data serially out of the device. Data is shifted out on the falling edge of SCK (for Standard mode). / Bidirectional IO pin to transfer commands, addresses or data serially into the device on the rising edge of SCK and read data or status from the device on the falling edge of SCK (for Dual mode). SI / SIO0 Serial Data Input / Serial Data Input Output 0 SO / SIO1 Serial Data Output / Serial Data Input Output 1 CE Chip Enable To activate the device when CE is low. WP Write Protect The Write Protect ( WP ) pin is used to enable/disable BPL bit in the status register. HOLD Hold VDD Power Supply VSS Ground To temporality stop serial communication with SPI flash memory without resetting the device. To provide power. FUNCTIONAL BLOCK DIAGRAM Page Address Latch / Counter Memory Array High Voltage Generator Page Buffer Status Register Y-Decoder Byte Address Latch / Counter Command and Conrol Logic Serial Interface CE SCK SI (SIO0) SO (SIO1) Elite Semiconductor Memory Technology Inc. WP HOLD Publication Date: Mar. 2009 Revision: 1.0 3/36 ESMT F25L32PA SECTOR STRUCTURE Table 1: F25L32PA Sector Address Table Block 63 62 61 60 59 58 57 56 55 54 53 52 51 Sector Sector Size (Kbytes) Address range 1023 4KB 3FF000H – 3FFFFFH : : : 1008 4KB 3F0000H – 3F0FFFH 1007 4KB 3EF000H – 3EFFFFH : : : 992 4KB 3E0000H – 3E0FFFH 991 4KB 3DF000H – 3DFFFFH : : : 976 4KB 3D0000H – 3D0FFFH 975 4KB 3CF000H – 3CFFFFH : : : 960 4KB 3C0000H – 3C0FFFH 959 4KB 3BF000H – 3BFFFFH : : : 944 4KB 3B0000H – 3B0FFFH 943 4KB 3AF000H – 3AFFFFH : : : 928 4KB 3A0000H – 3A0FFFH 927 4KB 39F000H – 39FFFFH : : : 912 4KB 390000H – 390FFFH 911 4KB 38F000H – 38FFFFH : : : 896 4KB 380000H – 380FFFH 895 4KB 37F000H – 37FFFFH : : : 880 4KB 370000H – 370FFFH 879 4KB 36F000H – 36FFFFH : : : 864 4KB 360000H – 360FFFH 863 4KB 35F000H – 35FFFFH : : : 848 4KB 350000H – 350FFFH 847 4KB 34F000H – 34FFFFH : : : 830 4KB 340000H – 340FFFH 831 4KB 33F000H – 33FFFFH : : : 816 4KB 330000H – 330FFFH Elite Semiconductor Memory Technology Inc. Block Address A21 A20 A19 A18 A17 A16 1 1 1 1 1 1 1 1 1 1 1 0 1 1 1 1 0 1 1 1 1 1 0 0 1 1 1 0 1 1 1 1 1 0 1 0 1 1 1 0 0 1 1 1 1 0 0 0 1 1 0 1 1 1 1 1 0 1 1 0 1 1 0 1 0 1 1 1 0 1 0 0 1 1 0 0 1 1 Publication Date: Mar. 2009 Revision: 1.0 4/36 ESMT F25L32PA Table 1: F25L32PA Sector Address Table – Continued I Block 50 49 48 47 46 45 44 43 42 41 40 39 38 Sector Sector Size (Kbytes) Address range 815 4KB 32F000H – 32FFFFH : : : 800 4KB 320000H – 320FFFH 799 4KB 31F000H – 31FFFFH : : : 784 4KB 310000H – 310FFFH 783 4KB 30F000H – 30FFFFH : : : 768 4KB 300000H – 300FFFH 767 4KB 2FF000H – 2FFFFFH : : : 752 4KB 2F0000H – 2F0FFFH 751 4KB 2EF000H – 2EFFFFH : : : 736 4KB 2E0000H – 2E0FFFH 735 4KB 2DF000H – 2DFFFFH : : : 720 4KB 2D0000H – 2D0FFFH 719 4KB 2CF000H – 2CFFFFH : : : 704 4KB 2C0000H – 2C0FFFH 703 4KB 2BF000H – 2BFFFFH : : : 688 4KB 2B0000H – 2B0FFFH 687 4KB 2AF000H – 2AFFFFH : : : 672 4KB 2A0000H – 2A0FFFH 671 4KB 29F000H – 29FFFFH : : : 656 4KB 290000H – 290FFFH 655 4KB 28F000H – 28FFFFH : : : 640 4KB 280000H – 280FFFH 639 4KB 27F000H – 27FFFFH : : : 624 4KB 270000H – 270FFFH 623 4KB 26F000H – 26FFFFH : : : 608 4KB 260000H – 260FFFH Elite Semiconductor Memory Technology Inc. Block Address A21 A20 A19 A18 A17 A16 1 1 0 0 1 0 1 1 0 0 0 1 1 1 0 0 0 0 1 0 1 1 1 1 1 0 1 1 1 0 1 0 1 1 0 1 1 0 1 1 0 0 1 0 1 0 1 1 1 0 1 0 1 0 1 0 1 0 0 1 1 0 1 0 0 0 1 0 0 1 1 1 1 0 0 1 1 0 Publication Date: Mar. 2009 Revision: 1.0 5/36 ESMT F25L32PA Table 1: F25L32PA Sector Address Table – Continued II Block 37 36 35 34 33 32 31 30 29 28 27 26 25 Sector Sector Size (Kbytes) Address range 607 4KB 25F000H – 25FFFFH : : : 592 4KB 250000H – 250FFFH 591 4KB 24F000H – 24FFFFH : : : 576 4KB 240000H – 240FFFH 575 4KB 23F000H – 23FFFFH : : : 560 4KB 230000H – 230FFFH 559 4KB 22F000H – 22FFFFH : : : 544 4KB 220000H – 220FFFH 543 4KB 21F000H – 21FFFFH : : : 528 4KB 210000H – 210FFFH 527 4KB 20F000H – 20FFFFH : : : 512 4KB 200000H – 200FFFH 511 4KB 1FF000H – 1FFFFFH : : : 496 4KB 1F0000H – 1F0FFFH 495 4KB 1EF000H – 1EFFFFH : : : 480 4KB 1E0000H – 1E0FFFH 479 4KB 1DF000H – 1DFFFFH : : : 464 4KB 1D0000H – 1D0FFFH 463 4KB 1CF000H – 1CFFFFH : : : 448 4KB 1C0000H – 1C0FFFH 447 4KB 1BF000H – 1BFFFFH : : : 432 4KB 1B0000H – 1B0FFFH 431 4KB 1AF000H – 1AFFFFH : : : 416 4KB 1A0000H – 1A0FFFH 415 4KB 19F000H – 19FFFFH : : : 400 4KB 190000H – 190FFFH Elite Semiconductor Memory Technology Inc. Block Address A21 A20 A19 A18 A17 A16 1 0 0 1 0 1 1 0 0 1 0 0 1 0 0 0 1 1 1 0 0 0 1 0 1 0 0 0 0 1 1 0 0 0 0 0 0 1 1 1 1 1 0 1 1 1 1 0 0 1 1 1 0 1 0 1 1 1 0 0 0 1 1 0 1 1 0 1 1 0 1 0 0 1 1 0 0 1 Publication Date: Mar. 2009 Revision: 1.0 6/36 ESMT F25L32PA Table 1: F25L32PA Sector Address Table – Continued III Block 24 23 22 21 20 19 18 17 16 15 14 13 12 Sector Sector Size (Kbytes) Address range 399 4KB 18F000H – 18FFFFH : : : 384 4KB 180000H – 180FFFH 383 4KB 17F000H – 17FFFFH : : : 368 4KB 170000H – 170FFFH 367 4KB 16F000H – 16FFFFH : : : 352 4KB 160000H – 160FFFH 351 4KB 15F000H – 15FFFFH : : : 336 4KB 150000H – 150FFFH 335 4KB 14F000H – 14FFFFH : : : 320 4KB 140000H – 140FFFH 319 4KB 13F000H – 13FFFFH : : : 304 4KB 130000H – 130FFFH 303 4KB 12F000H – 12FFFFH : : : 288 4KB 120000H – 120FFFH 287 4KB 11F000H – 11FFFFH : : : 272 4KB 110000H – 110FFFH 271 4KB 10F000H – 10FFFFH : : 256 4KB 100000H – 100FFFH 255 4KB 0FF000H – 0FFFFFH : : 240 4KB 0F0000H – 0F0FFFH 239 4KB 0EF000H – 0EFFFFH : : 224 4KB 0E0000H – 0E0FFFH 223 4KB 0DF000H – 0DFFFFH : : 208 4KB 0D0000H – 0D0FFFH 207 4KB 0CF000H – 0CFFFFH : : 192 4KB Elite Semiconductor Memory Technology Inc. : : : : : Block Address A21 A20 A19 A18 A17 A16 0 1 1 0 0 0 0 1 0 1 1 1 0 1 0 1 1 0 0 1 0 1 0 1 0 1 0 1 0 0 0 1 0 0 1 1 0 1 0 0 1 0 0 1 0 0 0 1 0 1 0 0 0 0 0 0 1 1 1 1 0 0 1 1 1 0 0 0 1 1 0 1 0 0 1 1 0 0 0C0000H – 0C0FFFH Publication Date: Mar. 2009 Revision: 1.0 7/36 ESMT F25L32PA Table 1: F25L32PA Sector Address Table – Continued IV Block 11 10 9 8 7 6 5 4 3 2 1 0 Sector Sector Size (Kbytes) 191 4KB Address range A20 A19 A18 A17 A16 0 0 1 0 1 1 0 0 1 0 1 0 0 0 1 0 0 1 0 0 1 0 0 0 0 0 0 1 1 1 0 0 0 1 1 0 0 0 0 1 0 1 0 0 0 1 0 0 0 0 0 0 1 1 0 0 0 0 1 0 0 0 0 0 0 1 0 0 0 0 0 0 0BF000H – 0BFFFFH : : 176 4KB 0B0000H – 0B0FFFH 175 4KB 0AF000H – 0AFFFFH : : : : 160 4KB 0A0000H – 0A0FFFH 159 4KB 09F000H – 09FFFFH : : : 144 4KB 090000H – 090FFFH 143 4KB 08F000H – 08FFFFH : : : 128 4KB 080000H – 080FFFH 127 4KB 07F000H – 07FFFFH : : : 112 4KB 070000H – 070FFFH 111 4KB 06F000H – 06FFFFH : : : 96 4KB 060000H – 060FFFH 95 4KB 05F000H – 05FFFFH : : : 80 4KB 050000H – 050FFFH 79 4KB 04F000H – 04FFFFH : : : 64 4KB 040000H – 040FFFH 63 4KB 03F000H – 03FFFFH : : : 48 4KB 030000H – 030FFFH 47 4KB 02F000H – 02FFFFH : : : 32 4KB 020000H – 020FFFH 31 4KB 01F000H – 01FFFFH : : : 16 4KB 010000H – 010FFFH 15 4KB 00F000H – 00FFFFH : : : 0 4KB 000000H – 000FFFH Elite Semiconductor Memory Technology Inc. Block Address A21 Publication Date: Mar. 2009 Revision: 1.0 8/36 ESMT F25L32PA STATUS REGISTER The software status register provides status on whether the flash memory array is available for any Read or Write operation, whether the device is Write enabled, and the state of the memory Write protection. During an internal Erase or Program operation, the status register may be read only to determine the completion of an operation in progress. Table 2 describes the function of each bit in the software status register. Table 2: Software Status Register Bit Name Function Default at Power-up Read/Write 0 R 0 R 1 1 1 0 0 R/W R/W R/W N/A N/A 0 R/W Status Register 0 BUSY 1 WEL 2 3 4 5 6 BP0 BP1 BP2 RESERVED RESERVED 7 BPL 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 1 = Device is memory Write enabled 0 = Device is not memory Write enabled Indicate current level of block write protection (See Table 3) Indicate current level of block write protection (See Table 3) Indicate current level of block write protection (See Table 3) Reserved for future use Reserved for future use 1 = BP2,BP1,BP0 are read-only bits 0 = BP2,BP1,BP0 are read/writable Note: 1. Only BP0, BP1, BP2 and BPL are writable. 2. All register bits are volatility 3. All area are protected at power-on (BP2=BP1=BP0=1) WRITE ENABLE LATCH (WEL) BUSY The Write-Enable-Latch bit indicates the status of the internal memory Write Enable Latch. If this bit is set to “1”, it indicates the device is Write enabled. If the bit is set to “0” (reset), it indicates the device is not Write enabled and does not accept any memory Write (Program/ Erase) commands. This bit is automatically reset under the following conditions: The BUSY bit determines whether there is an internal Erase or Program operation in progress. A “1” for the BUSY bit indicates the device is busy with an operation in progress. A “0” indicates the device is ready for the next valid operation. • • • • • • • Power-up Write Disable (WRDI) instruction completion Page Program instruction completion Sector Erase instruction completion Block Erase instruction completion Chip Erase instruction completion Write Status Register instructions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 9/36 ESMT F25L32PA Table 3: F25L32PA Block Protection Table TOP Protection Level Status Register Bit Protected Memory Area BP2 BP1 BP0 Block Range Address Range 0 0 0 0 None None Upper 1/64 0 0 1 Block 63 3F0000H –3FFFFFH Upper 1/32 0 1 0 Block 62~63 3E0000H –3FFFFFH Upper 1/16 0 1 1 Block 60~63 3C0000H –3FFFFFH Upper 1/8 1 0 0 Block 56~63 380000H –3FFFFFH Upper 1/4 1 0 1 Block 48~63 300000H –3FFFFFH Upper 1/2 1 1 0 Block 32~63 200000H –3FFFFFH All Blocks 1 1 1 Block 0~63 000000H –3FFFFFH Block Protection (BP2, BP1, BP0) Block Protection Lock-Down (BPL) The Block-Protection (BP2, BP1, BP0) bits define the size of the memory area, as defined in Table 3, to be software protected against any memory Write (Program or Erase) operations. The Write Status Register (WRSR) instruction is used to program the WP pin driven low (VIL), enables the Block-ProtectionLock-Down (BPL) bit. When BPL is set to 1, it prevents any further alteration of the BPL, BP2, BP1, and BP0 bits. When the BP2, BP1, BP0 bits as long as WP is high or the BlockProtection-Look (BPL) bit is 0. Chip Erase can only be executed if Block-Protection bits are all 0. After power-up, BP2, BP1 and BP0 are set to1. Elite Semiconductor Memory Technology Inc. WP pin is driven high (VIH), the BPL bit has no effect and its value is “Don’t Care”. After power-up, the BPL bit is reset to 0. Publication Date: Mar. 2009 Revision: 1.0 10/36 ESMT F25L32PA HOLD OPERATION HOLD pin is used to pause a serial sequence underway with the SPI flash memory without resetting the clocking sequence. To activate the HOLD mode, CE must be in active low state. The Once the device enters Hold mode, SO will be in high impedance state while SI and SCK can be VIL or VIH. HOLD mode begins when the SCK active low state coincides If CE is driven active high during a Hold condition, it resets the with the falling edge of the HOLD signal. The HOLD mode ends internal logic of the device. As long as HOLD signal is low, the memory remains in the Hold condition. To resume when the HOLD signal’s rising edge coincides with the SCK active low state. If the falling edge of the HOLD signal does not coincide with the SCK active low state, then the device enters Hold mode when the SCK next reaches the active low state. Similarly, if the rising edge of the HOLD signal does not coincide with the SCK active low state, then the device exits in Hold mode when the SCK next reaches the active low state. See Figure 1 for Hold Condition waveform. communication with the device, HOLD must be driven active high, and CE must be driven active low. See Figure 23 for Hold timing. The HOLD function is only available for Standard and Dual SPI operation. S CK HO L D A ctive A ctive Ho ld Ho ld A ctive Figure 1: HOLD Condition Waveform WRITE PROTECTION The device provides software Write Protection. The Write-Protect pin ( WP ) enables or disables the lock-down function of the status register. The Block-Protection bits (BP2, BP1, BP0, and BPL) in the status register provide Write protection to the memory array and the status register. See Table 4 for Block-Protection description. Write Protect Pin ( WP ) The Write-Protect ( WP ) pin enables the lock-down function of Table 4: Conditions to Execute Write-Status- Register (WRSR) Instruction WP BPL Execute WRSR Instruction L 1 Not Allowed L 0 Allowed H X Allowed the BPL bit (bit 7) in the status register. When WP is driven low, the execution of the Write Status Register (WRSR) instruction is determined by the value of the BPL bit (see Table 4). When WP is high, the lock-down function of the BPL bit is disabled. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 11/36 ESMT F25L32PA INSTRUCTIONS Instructions are used to Read, Write (Erase and Program), and configure the device. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Page Program, Write Status Register, Sector Erase, Block Erase, or Chip Erase instructions, the Write Enable (WREN) instruction must be executed first. The complete list of the instructions is provided in Table 5. All instructions are entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read ID, Read Status Register, Read Electronic Signature instructions). Any low to high synchronized off a high to low transition of CE . Inputs will be accepted on the rising edge of SCK starting with the most Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first. transition on CE , before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to the standby mode. significant bit. CE must be driven low before an instruction is Table 5: Device Operation Instruction Operation Read Fast Read Fast Read Dual Output12,13 Fast Read Dual I/O12, 14 Sector Erase4 (4K Byte) Block Erase4, (64K Byte) Chip Erase Max. Freq 1 SIN SOUT 33 MHz 03H Hi-Z 0BH Hi-Z 3BH BBH 20H Hi-Z D8H Hi-Z 60H / Hi-Z C7H Page Program (PP) 50MHz Mode Bit Reset 15 Deep Power Down (DP) Read Status Register (RDSR) 6 Enable Write Status ～ 7 Register (EWSR) Write Status Register (WRSR) 7 Write Enable (WREN) 10 Write Disable (WRDI)/ Exit 100MHz secured OTP mode Enter secured OTP mode (ENSO) Release from Deep Power Down (RDP) Read Electronic Signature 8 (RES) RES in secured OTP mode & not lock down RES in secured OTP mode & lock down 02H 2 SIN SOUT A23-A16 Hi-Z A23-A16 Hi-Z A23-A16 A23-A8 A23-A16 Hi-Z A23-A16 Hi-Z - Hi-Z A23-A16 FFH B9h Hi-Z Hi-Z FFH - 05H Hi-Z X 50H Hi-Z - 01H Hi-Z Bus Cycle 1~3 3 4 SIN SOUT SIN SOUT A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 A7-A0 A7-A0, M7-M0 DOUT0~1 A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z - - Hi-Z A15-A8 Hi-Z DOUT (S7-S0) - - - - - - - - - - - 5 SIN X X SOUT DOUT0 X X cont. - 6 SIN SOUT X DOUT1 X DOUT0 DOUT0~1 - N SIN X X SOUT cont. cont. cont. - - - - - - - - - DIN0 Hi-Z DIN1 Hi-Z - - - - - - - - - - - - - - - - - - - - - -. - - - - - - - - - - - - - - - Hi-Z A7-A0 Hi-Z Up to 256 Hi-Z bytes - 06H DIN (S7-S0) Hi-Z - 04H Hi-Z - - - - - - - - - - - - B1H Hi-Z - - - - -. - - - - - - - ABH Hi-Z - - - - - - - - - - - - ABH Hi-Z X X X X X X X 15H - - - - ABH Hi-Z X X X X X X X 35H - - - - ABH Hi-Z X X X X X X X 75H - - - - Elite Semiconductor Memory Technology Inc. Hi-Z - DIN Hi-Z (S15-S8) - Publication Date: Mar. 2009 Revision: 1.0 12/36 ESMT F25L32PA Table 5: Device Operation Instruction - Continued Max. Freq Operation Jedec Read ID 9 (JEDEC-ID) Read ID (RDID) 50MHz 1 2 SIN SOUT SIN SOUT SIN 9FH Hi-Z X 8CH X Bus Cycle 1~3 3 4 SOUT SIN SOUT 20H ~ 11 90H Hi-Z 00H Hi-Z 00H 5 6 N SIN SOUT SIN SOUT SIN SOUT X 16H - - - - - - 00H Hi-Z X 8CH X 15H - - 01H Hi-Z X 15H X 8CH - - Hi-Z 100MHz Notes: 1. 2. 3. 4. 5. 6. 7. Operation: SIN = Serial In, SOUT = Serial Out, Bus Cycle 1 = Op Code X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary); cont. = continuous One bus cycle is eight clock periods. Sector Earse addresses: use AMS -A12, remaining addresses can be VIL or VIH Block Earse addresses: use AMS -A16, remaining addresses can be VIL or VIH To continue programming to the next sequential address location, enter the 8-bit command, followed by the data to be programmed. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE . The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both instructions effective. 8. 9. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE . The JEDEC-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type; third byte 16H as memory capacity. 10. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN. 11. The Manufacture ID and Device ID output will repeat continuously until CE terminates the instruction. 12. Dual commands use bidirectional IO pins. DOUT and cont. are serial data out; others are serial data in. 13. Dual output data: IO0 = (D6, D4, D2, D0), (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1), (D7, D5, D3, D1) DOUT0 DOUT1 14. M7-M0: Mode bits. Dual input address: IO0 = (A22, A20, A18, A16, A14, A12, A10, A8) IO1 = (A23, A21, A19, A17, A15, A13, A11, A9) (A6, A4, A2, A0, M6, M4, M2, M0) (A7, A5, A3, A1, M7, M5, M3, M1) Bus Cycle-2 Bus Cycle-3 15. This instruction is recommended when using the Dual Mode bit feature. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 13/36 ESMT F25L32PA Read (33MHz) The Read instruction supports up to 33 MHz, it outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a the data from address location 3FFFFFH had been read, the next output will be from address location 00000H. low to high transition on CE . The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space, i.e. for 32Mbit density, once The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A23 -A0]. CE must remain active low for the duration of the Read cycle. See Figure 2 for the Read sequence. Figure 2: Read Sequence Fast Read (50 MHz ~ 100 MHz) The Fast Read instruction supporting up to 100 MHz is initiated by executing an 8-bit command, 0BH, followed by address bits all addresses until terminated by a low to high transition on CE . The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space, i.e. for 32Mbit density, once the data from address location 3FFFFFH has been read, the next output will be from address location 000000H. [A23 -A0] and a dummy byte. CE must remain active low for the duration of the Fast Read cycle. See Figure 3 for the Fast Read sequence. Following a dummy byte (8 clocks input dummy cycle), the Fast Read instruction outputs the data starting from the specified address location. The data output stream is continuous through CE MODE3 SCK MODE0 0 1 2 3 4 5 6 7 8 ADD. 0B SI MSB SO 15 16 23 24 ADD. 31 32 ADD. 39 40 47 48 55 56 63 64 71 72 80 X MSB HIGH IMPENANCE N N+1 N+2 N+3 N+4 DOUT DOUT DOUT DOUT DOUT MSB Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH) Figure 3: Fast Read Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 14/36 ESMT F25L32PA Fast Read Dual Output (50 MHz~100 MHz) The Fast Read Dual Output instruction is initiated by executing an 8-bit command, 3BH, followed by address bits [A23 -A0] and a The Fast Read Dual Output (3BH) instruction is similar to the standard Fast Read (0BH) instruction except the data is output on bidirectional I/O pins (SIO0 and SIO1). This allows data to be transferred from the device at twice the rate of standard SPI devices. This instruction is for quickly downloading code from Flash to RAM upon power-up or for applications that cache codesegments to RAM for execution. dummy byte. CE must remain active low for the duration of the Fast Read Dual Output cycle. See Figure 4 for the Fast Read Dual Output sequence. CE MODE3 SCK MODE0 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 43 44 3B MSB SIO1 ADD. MSB HIGH IMPENANCE ADD. ADD. 55 56 51 52 IO0 switches from In put to Ouput Dummy SIO0 47 48 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 D OUT DOUT D OU T D OU T D OUT N N+1 N+2 N+3 N+4 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 Note: The input data durin g the dummy clocks is “don’t care”. However , the IO0 pin should be high-impefance piror to th e falling edge of the first data clock. Figure 4: Fast Read Dual Output Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 15/36 ESMT F25L32PA Fast Read Dual I/O (50 MHz~100 MHz) The Fast Read Dual I/O (BBH) instruction is similar to the Fast Read Dual Output (3BH) instruction, but with the capability to input address bits [A23 -A0] two bits per clock. If [M7 –M0] = “AxH”, the next Fast Read Dual I/O instruction (after To set mode bits [M7 -M0] after the address bits [A23 -A0] can further reduce instruction overhead (See Figure 5). The upper mode bits [M7 –M4] controls the length of next Fast Read Dual I/O instruction with/without the first byte command code (BBH). The lower mode bits [M3 –M0] are “don’t care”. clocks and allows to enter address immediately after CE is asserted low. If [M7 –M0] are the value other than “AxH”, the next instruction need the first byte command code, thus returning to normal operation. A Mode Bit Reset (FFH) also can be used to reset mode bits [M7 –M0] before issuing normal instructions. CE is raised and the lowered) doesn’t need the command code (See Figure 6). This way let the instruction sequence reduce 8 CE MODE3 SCK MODE0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 27 28 31 32 35 36 39 40 IO0 switches from Input to Ouput SIO0 22 20 18 16 14 12 10 8 BB 6 4 2 0 6 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 4 MSB HIG H IMPENANCE SIO1 23 21 19 17 15 13 11 9 A23-16 7 5 A15-8 3 1 A7- 0 7 DOUT D OU T DOUT DOUT DOUT N N+1 N+2 N+3 N+4 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 5 M7- 0 Note: The mode bits [M3 -M0] are “d on’t care”. However , the IO pins sh ould be high-impefance piror to the falling edge of the first data clock. Figure 5: Fast Read Dual I/O Sequence ([M7 -M0] = 0xH or NOT AxH) CE MODE3 SCK MODE0 IO0 switches from In put to Ouput SIO0 SIO1 22 20 18 16 14 12 10 8 23 21 19 17 15 13 11 A23- 16 A15- 8 9 6 7 4 5 2 3 A7-0 0 1 6 7 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 4 5 DOUT DOUT D OU T D OUT D OUT N N+1 N+2 N+3 N+4 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 M 7-0 Note: The mode bits [M3 -M0] are “don’t care”. However , the IO pins sh ould be high-impe fance piror to the fa ll ing edge of the fi rst data clock. Figure 6: Fast Read Dual I/O Sequence ([M7 -M0] = AxH) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 16/36 ESMT F25L32PA Page Program (PP) The Page Program instruction allows many bytes to be programmed in the memory. The bytes must be in the erased state (FFH) when initiating a Program operation. A Page Program instruction applied to a protected memory area will be ignored. latched data are discarded and the last 256 bytes Data are guaranteed to be programmed correctly within the same page. If less than 256 bytes Data are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. Prior to any Write operation, the Write Enable (WREN) instruction CE must be driven high before the instruction is executed. The user may poll the BUSY bit in the software status register or wait TPP for the completion of the internal self-timed Page Program operation. While the Page Program cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. It is recommended to wait for a duration of TBP1 before reading the status register to check the BUSY bit. The BUSY bit is a 1 during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Page Program cycle has finished, the Write-Enable-Latch (WEL) bit in the Status Register is cleared to 0. See Figure 10 for the Page Program sequence. must be executed. CE must remain active low for the duration of the Page Program instruction. The Page Program instruction is initiated by executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the address, at least one byte Data is input (the maximum of input data can be up to 256 bytes). If the 8 least significant address bits [A7-A0] are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits [A7-A0] are all zero). If more than 256 bytes Data are sent to the device, previously Figure 10: Page Program Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 17/36 ESMT F25L32PA Mode Bit Reset Mode bits [M7 –M0] are issued to further reduce instruction overhead for Fast Read Dual I/O operation. If [M7 –M0] = “AxH”, the next Fast Read Dual I/O instruction doesn’t need the command code. However, the device doesn’t have a hardware reset pin, so if [M7 –M0] = “AxH”, the device will not recognize any standard SPI instruction. After a system reset, it is recommended to issue a Mode Bit Reset instruction first to release the status of [M7 –M0] = “AxH” and allow the device to recognize standard SPI instruction. See Figure 16 for the Mode Bit Reset instruction. If the system controller is reset during operation, it will send a standard instruction (such as Read ID) to the Flash memory. Mode bit Reset for Dual I/O CE MODE3 SCK MODE0 0 1 SIO0 2 3 4 FF 5 6 7 8 9 10 11 12 13 14 15 FF SIO 1 Note: To reset mode bits during Dual I/O operation, sixteen clocks are needed to shift in command code “FFFFH”. Figure 16: Mode Bit Reset Instruction Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 18/36 ESMT F25L32PA 64K Byte Block Erase The 64K-byte Block Erase instruction clears all bits in the selected block to FFH. A Block Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write Enable (WREN) instruction must be -A0]. Address bits [AMS -A16] (AMS = Most Significant address) are used to determine the block address (BAX), remaining address bits can be VIL or VIH. CE must be driven high before the instruction is executed. The user may poll the BUSY bit in the Software Status Register or wait TBE for the completion of the internal self-timed Block Erase cycle. See Figure 17 for the Block Erase sequence. executed. CE must remain active low for the duration of the any command sequence. The Block Erase instruction is initiated by executing an 8-bit command, D8H, followed by address bits [A23 Figure 17: 64K-byte Block Erase Sequence 4K Byte Sector Erase [AMS -A12] (AMS = Most Significant address) are used to determine the sector address (SAX), remaining address bits can be VIL or The Sector Erase instruction clears all bits in the selected sector to FFH. A Sector Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write VIH. CE must be driven high before the instruction is executed. The user may poll the BUSY bit in the Software Status Register or wait TSE for the completion of the internal self-timed Sector Erase cycle. See Figure 18 for the Sector Erase sequence. Enable (WREN) instruction must be executed. CE must remain active low for the duration of the any command sequence. The Sector Erase instruction is initiated by executing an 8-bit command, 20H, followed by address bits [A23 -A0]. Address bits CE MODE3 15 16 0 1 2 3 4 5 6 7 8 31 23 24 SCK MODE0 20 SI MSB SO ADD. ADD. ADD. MSB HIGH IMPENANCE Figure 18: 4K-byte Sector Erase Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 19/36 ESMT F25L32PA Chip Erase The Chip Erase instruction clears all bits in the device to FFH. A Chip Erase instruction will be ignored if any of the memory area is protected. Prior to any Write operation, the Write Enable (WREN) Erase instruction is initiated by executing an 8-bit command, 60H or C7H. CE must be driven high before the instruction is executed. The user may poll the BUSY bit in the Software Status Register or wait TCE for the completion of the internal self-timed Chip Erase cycle. See Figure 19 for the Chip Erase sequence. instruction must be executed. CE must remain active low for the duration of the Chip-Erase instruction sequence. The Chip CE MODE3 0 1 2 3 4 5 6 7 SCK MODE0 60 or C7 SI MSB HIGH IMPENANCE SO Figure 19: Chip Erase Sequence Read Status Register (RDSR) The Read Status Register (RDSR) instruction allows reading of the status register. The status register may be read at any time even during a Write (Program/Erase) operation. When a Write operation is in progress, the BUSY bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE must be driven low before the RDSR instruction is entered and remain low until the status data is read. The RDSR-1 instruction code is “05H” for Status Register. Read Status Register is continuous with ongoing clock cycles until it is terminated by a low to high transition of the CE . See Figure 20 for the RDSR instruction sequence. CE MODE3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SCK MODE0 05 SI MSB SO HIGH IMPEDANCE Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 MSB Status Register Data Out Figure 20: Read Status Register (RDSR) Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 20/36 ESMT F25L32PA Write Enable (WREN) The Write Enable (WREN) instruction sets the Write-EnableLatch bit in the Software Status Register to 1 allowing Write operations to occur. The WREN instruction must be executed prior to any Write (Program/Erase) operation. CE must be driven high before the WREN instruction is executed. CE 0 1 2 3 4 5 6 7 MODE3 SCK MODE0 06 SI MSB HIGH IMPENANCE SO Figure 21: Write Enable (WREN) Sequence Write Disable (WRDI) The Write Disable (WRDI) instruction resets the Write-EnableLatch bit to 0 disabling any new Write operations from occurring. CE must be driven high before the WRDI instruction is executed. CE MODE3 0 1 2 3 4 5 6 7 SCK MODE0 04 SI MSB SO HIGH IMPENANCE Figure 22: Write Disable (WRDI) Sequence Enable Write Status Register (EWSR) The Enable Write Status Register (EWSR) instruction arms the Write Status Register (WRSR) instruction and opens the status register for alteration. The Enable Write Status Register instruction does not have any effect and will be wasted, if it is not followed immediately by the Write Status Register (WRSR) Elite Semiconductor Memory Technology Inc. instruction. CE must be driven low before the EWSR instruction is entered and must be driven high before the EWSR instruction is executed. Publication Date: Mar. 2009 Revision: 1.0 21/36 ESMT F25L32PA Write-Status-Register (WRSR) The Write Status Register instruction writes new values to the BP2, BP1, BP0, BPL (Status Register) bits of the status register. CE must be driven low before the command sequence of the WRSR instruction is entered and driven high before the WRSR instruction is executed. CE must be driven high after the eighth bit of data that is clocked in. If it is not done, the WRSR instruction will not be issued. See Figure 23 for EWSR or WREN and WRSR instruction sequences. Executing the Write Status Register instruction will be ignored when WP is low and BPL bit is set to “1”. When the WP is low, the BPL bit can only be set from “0” to “1” to lock down the status register, but cannot be reset from “1” to “0”. When WP is high, the lock-down function of the BPL bit is disabled and the BPL, BP0, BP1,and BP2 bits in the status register can all be changed. As long as BPL bit is set to 0 or WP pin is driven high (VIH) prior to the low-to-high transition of the CE pin at the end of the WRSR instruction, the bits in the status register can all be altered by the WRSR instruction. In this case, a single WRSR instruction can set the BPL bit to “1” to lock down the status register as well as altering the BP0; BP1 and BP2 bits at the same time. See Table 4 for a summary description of WP and BPL functions. CE MODE3 SCK MODE0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Stauts Register Data In 50 or 06 SI 01 MSB SO 7 6 5 4 3 2 1 0 MSB HIGH IMPENANCE Figure 23: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Status-Register (WRSR) Enter OTP Mode (ENSO) The ENSO (B1H) instruction is for entering the additional 2K bytes secured OTP mode. The additional 2K bytes secured OTP sector is independent from main array, which may use to store unique serial number for system identifier. User must unprotect whole array (BP0=BP1=BP2=0), prior to any Write (Program/ Erase) operation in OTP sector. After entering the secured OTP mode, only the secured OTP sector can be accessed and user can follow the standard Read or Write procedure except for Block Erase and Chip Erase. The secured OTP data cannot be updated again once it is lock down. In secured OTP mode, WRSR command will ignore the input data and lock down the secured OTP sector (OTP_lock bit =1). To exit secured OTP mode, user must execute WRDI command. RES can be used to verify the secured OTP status as shown in Table 6. Figure 24: Enter OTP Mode (ENSO) Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 22/36 ESMT F25L32PA Deep Power Down (DP) The Deep Power Down instruction is for minimizing power consumption (the standby current is reduced from ISB1 to ISB2.). Once the device is in deep power down status, all instructions will be ignored except the Release from Deep Power Down instruction (RDP) and Read Electronic Signature instruction (RES). The device always power-up in the normal operation with the standby current (ISB1). See Figure 25 for the Deep Power Down instruction. This instruction is initiated by executing an 8-bit command, B9H, and then CE must be driven high. After CE is driven high, the device will enter to deep power down within the duration of TDP. CE MODE3 0 1 2 3 4 5 6 SCK MODE0 7 T DP B9 SI MSB Standard Current Deep Power Down Current (ISB2) Figure 25: Deep Power Down Instruction Release from Deep Power Down (RDP) and Read Electronic-Signature (RES) The Release form Deep Power Down and Read Electronic-Signature instruction is a multi-purpose instruction. The instruction can be used to release the device from the deep power down status. This instruction is initiated by driving CE low and executing an 8-bit command, ABH, and then drive CE high. See Figure 26 for RDP instruction. Release from the deep power down will take the duration of TRES1 before the device will resume normal operation and other instructions are accepted. CE must remain high during TRES1. The instruction also can be used to read the 8-bit ElectronicSignature of the device on the SO pin. It is initiated by driving Elite Semiconductor Memory Technology Inc. CE low and executing an 8-bit command, ABH, followed by 3 dummy bytes. The Electronic-Signature byte is then output from the device. The Electronic-Signature can be read continuously until CE go high. See Figure 27 for RES sequence. After driving CE high, it must remain high during for the duration of TRES2, and then the device will resume normal operation and other instructions are accepted. The instruction is executed while an Erase, Program or WRSR cycle is in progress is ignored and has no effect on the cycle in progress. In OTP mode, user also can execute RES to confirm the status of OTP. Publication Date: Mar. 2009 Revision: 1.0 23/36 ESMT F25L32PA CE MODE3 0 1 2 3 4 5 6 7 T RES1 SCK MODE0 AB SI MSB HIGH IMPEDANCE SO Standby Current Deep Power Down Current (ISB2) Figure 26: Release from Deep Power Down (RDP) Instruction CE MODE3 SCK MODE0 0 1 2 3 4 5 6 7 8 30 9 31 32 33 34 35 36 37 38 TRES2 SS 3 Dummy Bytes SS AB SI MSB SO HIGH IMPEDANCE SS Electronic-Signature Data Out MSB Deep Power Down Current (ISB2) Standby Current Figure 27: Read Electronic -Signature (RES) Sequence Table 6: Electronic Signature Data Command RES Mode Electronic Signature Data Normal 15H In secured OTP mode & non lock down (OTP_lock =0) 35H In secured OTP mode & lock down (OTP_lock =1) 75H Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 24/36 ESMT F25L32PA JEDEC Read-ID The JEDEC Read-ID instruction identifies the device as F25L32PA and the manufacturer as ESMT. The device information can be read from executing the 8-bit command, 9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer’s ID, 8CH, is output from the device. After that, a 16-bit device ID is shifted out on the SO pin. Byte1, 8CH, identifies the manufacturer as ESMT. Byte2, 20H, identifies the memory type as SPI Flash. Byte3, 16H, identifies the device as F25L32PA. The instruction sequence is shown in Figure 28. The JEDEC Read ID instruction is terminated by a low to high transition on CE at any time during data output. If no other command is issued after executing the JEDEC Read-ID instruction, issue a 00H (NOP) command before going into Standby Mode ( CE =VIH). CE MODE3 SCK MODE0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 1415 1617 1819 2021 22 23 24 25 2627 2829 3031 9F SI MSB SO HIGH IMPENANCE 20 8C MSB 16 MSB MSB Figure 28: JEDEC Read-ID Sequence Table 7: JEDEC Read-ID Data Manufacturer’s ID (Byte 1) 8CH Elite Semiconductor Memory Technology Inc. Device ID Memory Type (Byte 2) Memory Capacity (Byte 3) 20H 16H Publication Date: Mar. 2009 Revision: 1.0 25/36 ESMT F25L32PA Read-ID (RDID) The Read-ID instruction (RDID) identifies the devices as F25L32PA and manufacturer as ESMT. This command is backward compatible to all ESMT SPI devices and should be used as default device identification when multiple versions of ESMT SPI devices are used in one design. The device information can be read from executing an 8-bit command, 90H, followed by address bits [A23 -A0]. Following the Read-ID instruction, the manufacturer’s ID is located in address 00000H and the device ID is located in address 00001H. Once the device is in Read-ID mode, the manufacturer’s and device ID output data toggles between address 00000H and 00001H until terminated by a low to high transition on CE . CE MODE3 SCK MODE0 15 16 0 1 2 3 4 5 6 7 8 SI 90 00 39 40 47 4 8 55 56 63 1 00 ADD MSB MSB SO 31 32 23 24 HIGH IMPENANCE 8C 15 8C 15 HIGH IMPENA NCE MSB Note: The Manufacture’s an d Device ID o utput stream i s continu ous until terminated by a low to high transition on CE. 1. 00H will output the Manufacture’s ID first a nd 01H will output Device ID first b efore toggling between the two. . Figure 29: Read ID Sequence Table 8: Product ID Data Address 00000H 00001H Elite Semiconductor Memory Technology Inc. Byte1 Byte2 8CH 15H Manufacturer’s ID Device ID ESMT F25L32PA 15H 8CH Device ID ESMT F25L32PA Manufacturer’s ID Publication Date: Mar. 2009 Revision: 1.0 26/36 ESMT F25L32PA ELECTRICAL SPECIFICATIONS Absolute Maximum Stress Ratings (Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA ( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. ) TABLE 9: AC CONDITIONS OF TEST Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz See Figures 34 and 35 TABLE 10: OPERATING RANGE Parameter Symbol Operating Supply Voltage Ambient Operating Temperature Value Unit VDD 2.7 ~ 3.6 V VDD (FCLK ＞ 50MHz) 3.0 ~ 3.6 V 0 ~ 70 ℃ TA TABLE 11: DC OPERATING CHARACTERISTICS Symbol Parameter Min Limits Max 15 18 IDDR1 Read Current @ 33MHz Standard Dual IDDR2 Read Current @ 50MHz Standard Dual 20 23 IDDR3 Read Current @ 86MHz IDDR4 Read Current @ 100MHz Standard Dual Standard Dual 23 25 25 28 IDDW Program and Erase Current ISB1 Standby Current ISB2 Deep Power Down Current ILI ILO VIL VIH VOL VOH Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Elite Semiconductor Memory Technology Inc. mA CE =0.1 VDD/0.9 VDD, SO=open mA CE =0.1 VDD/0.9 VDD, SO=open mA CE =0.1 VDD/0.9 VDD, SO=open mA CE =0.1 VDD/0.9 VDD, SO=open 35 mA CE =VDD 30 µA CE =VDD, VIN =VDD or VSS 5 µA 1 1 0.8 µA µA V V V V CE =VDD, VIN =VDD or VSS VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=100 µA, VDD=VDD Min IOH=-100 µA, VDD=VDD Min 0.7 x VDD 0.2 VDD-0.2 Test Condition Unit Publication Date: Mar. 2009 Revision: 1.0 27/36 ESMT F25L32PA TABLE 12: LATCH UP CHARACTERISTIC Symbol Parameter 1 ILTH Latch Up Minimum Unit Test Method 100 + IDD mA JEDEC Standard 78 Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 13: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol TPU-READ1 TPU-WRITE 1 Parameter Minimum Unit VDD Min to Read Operation 10 µs VDD Min to Write Operation 10 µs Test Condition Maximum VOUT = 0V 12 pF VIN = 0V 6 pF TABLE 14: CAPACITANCE (TA = 25°C, f=1 MHz, other pins open) Parameter Description COUT1 Output Pin Capacitance CIN1 Input Capacitance Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 15: AC OPERATING CHARACTERISTICS Normal 33 MHz Symbol Fast 50 MHz Fast 86 MHz Fast 100 MHz Min Min Min Parameter Unit Min Max TSCKH Serial Clock High Time 13 9 7 5 ns TSCKL Serial Clock Low Time 13 9 7 5 ns CE Active Setup Time 5 5 5 5 ns TCEH1 CE Active Hold Time 5 5 5 5 ns TCHS1 CE Not Active Setup Time 5 5 5 5 ns TCHH CE Not Active Hold Time 5 5 5 5 ns TCPH CE High Time 100 100 100 100 ns TCHZ CE High to High-Z Output TCLZ SCK Low to Low-Z Output 0 0 0 0 ns TDS Data In Setup Time 3 3 3 3 ns TDH Data In Hold Time 3 3 3 3 ns THLS HOLD Low Setup Time 5 5 5 5 ns THHS HOLD High Setup Time 5 5 5 5 ns THLH HOLD Low Hold Time 5 5 5 5 ns THHH HOLD High Hold Time 5 5 5 5 ns THZ HOLD Low to High-Z Output 1 Elite Semiconductor Memory Technology Inc. 9 9 86 Max Serial Clock Frequency TCES 50 Max FCLK 1 33 Max 9 9 100 9 9 9 9 MHz ns ns Publication Date: Mar. 2009 Revision: 1.0 28/36 ESMT F25L32PA TABLE 15: AC OPERATING CHARACTERISTICS - Continued Normal 33MHz Symbol Fast 50 MHz Fast 86 MHz Fast 100 MHz Min Min Min Parameter Unit Min Max 9 Max Max 9 9 Max 9 ns TLZ HOLD High to Low-Z Output TOH Output Hold from SCK Change TV Output Valid from SCK 12 8 8 8 ns TDP CE High to Deep Power Down Mode 3 3 3 3 us TRES1 CE High to Standby Mode ( for DP) 3 3 3 3 us TRES2 CE High to Standby Mode (for RES) 1.8 1.8 1.8 1.8 us 0 0 0 0 ns Note 1: Relative to SCK. TABLE 16: ERASE AND PROGRAMMING PERFORMANCE Limit Parameter Symbol Typ 2 Max3 Unit Sector Erase Time TSE 90 300 ms Block Erase Time TBE 1 2 s Chip Erase Time TCE 25 50 s Byte Programming Time TBP 7 30 us Page Programming Time TPP 1.5 5 ms Chip Programming Time 50 100 s Erase/Program Cycles1 100,000 - Cycles 20 - Years Data Retention Notes: 1. 2. 3. Not 100% Tested, Excludes external system level over head. Typical values measured at 25°C, 3V. Maximum values measured at 85°C, 2.7V. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 29/36 ESMT F25L32PA Figure 30: Serial Input Timing Diagram Figure 31: Serial Output Timing Diagram Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 30/36 ESMT F25L32PA CE SCK SO SI HOLD Figure 32: HOLD Timing Diagram VCC VCC (max) Program, Erase and Write command is ignored CE must track VCC VCC (min) TVSL Reset State Read command is allowed Device is fully accessible VWI TPUW Time Figure 33: Power-Up Timing Diagram Table 17: Power-Up Timing and VWI Threshold Parameter Symbol Min. VCC(min) to CE low TVSL 200 Time Delay before Write instruction TPUW Write Inhibit Threshold Voltage VWI 1 Max. Unit us 10 ms 2 V Note: These parameters are characterized only. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 31/36 ESMT F25L32PA Input timing reference level Output timing reference level 0.8VCC 0.7VCC 0.3VCC 0.2VCC AC Measurement Level 0.5VCC Note : Input pulse rise and fall time are <5ns Figure 34: AC Input/Output Reference Waveforms Figure 35: A Test Load Example Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 32/36 ESMT F25L32PA PACKING DIMENSIONS 8-LEAD SOIC 200 mil ( official name – 209 mil ) 5 1 4 E1 8 E θ b e A A2 D L A1 L1 SEATING PLANE Dimension in mm Dimension in inch DETAIL "X" Dimension in mm Symbol Dimension in inch Symbol Min Norm Max Min Norm Max Min Norm Max Min Norm Max A --- --- 2.16 --- --- 0.085 E 7.70 7.90 8.10 0.303 0.311 0.319 A1 0.05 0.15 0.25 0.002 0.006 0.010 E1 5.18 5.28 5.38 0.204 0.208 0.212 A2 1.70 1.80 1.91 0.067 0.071 0.075 L 0.50 0.65 0.80 0.020 0.026 0.032 b 0.36 0.41 0.51 0.014 0.016 0.020 e c 0.19 0.20 0.25 0.007 0.008 0.010 L1 1.27 1.37 1.47 0.050 0.054 0.058 D 5.13 5.23 5.33 0.202 0.206 0.210 θ 0° --- 8° 0° --- 8° 1.27 BSC 0.050 BSC Controlling dimension : millimenter Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 33/36 ESMT F25L32PA PACKING DIMENSIONS 16-LEAD SOIC ( 300 mil ) 9 GAUGE PLANE 0 0.25 E E1 A 16 L DETAIL "X" 1 8 e b A2 A C D Dimension in mm "X" A1 SEATING PLANE Dimension in inch Dimension in mm Symbol Dimension in inch Symbol Min Norm Max Min Norm Max Min A --- --- 2.65 --- --- 0.104 E 10.30 BSC 0.406 BSC A1 0.1 --- 0.3 0.004 --- 0.012 E1 7.50 BSC 0.295 BSC A2 2.05 --- --- 0.081 --- --- L b 0.31 --- 0.51 0.012 --- 0.020 e c 0.20 --- 0.33 0.008 --- 0.013 θ D 10.10 10.30 10.50 0.400 0.406 0.413 0.40 Norm --- Max 1.27 Min 0.016 1.27 BSC 0° --- Norm --- Max 0.050 0.050 BSC 8° 0° --- 8° Controlling dimension : millimenter Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 34/36 ESMT F25L32PA Revision History Revision Date 0.1 2008.11.21 0.2 2009.01.09 1.0 2009.03.16 Elite Semiconductor Memory Technology Inc. Description Original 1. Modify the specification of TCE 2. Modify headline 1. Add Dual SPI instructions 2. Modify the memory type of JEDEC Read-ID data from 40H to 20H 3. Delete the rating of Temperature Under Bias Publication Date: Mar. 2009 Revision: 1.0 35/36 ESMT F25L32PA Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2009 Revision: 1.0 36/36