KST5086/5087 KST5086/5087 Low Noise Transistor 3 2 1 PNP Epitaxial Silicon Transistor SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50 Units V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -3 V IC Collector Current -50 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -50 BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -50 ICBO Collector Cut-off Current VCB= -20V, IE=0 hFE DC Current Gain : KST5086 : KST5087 : KST5086 : KST5087 : KST5086 : KST5087 VCE= -5V, IC= -100µA VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA Max. Units V -50 nA V 150 250 150 250 150 250 500 800 VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.85 V fT Current Gain Bandwidth Product VCE= -5V, IC= -500µA f=20MHz Cob Output Capacitance VCB= -5V, IE=0 f=100MHz 4 pF NF Noise Figure IC= -100µA, VCE= -5V RS=3KΩ, f=1KHz VCE= -5V, IC= -20mA RS=10KΩ, f=10Hz to 15.7KHz 3 2 2 dB dB dB : KST5086 : KST5087 : KST5087 40 MHz Marking Code Type KST5086 KST5087 Mark 2P 2Q Marking 2P ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5086/5087 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -5V KST5087 KST5086 100 10 1 -0.1 -1 -10 -100 -10 IC = 10 IB -1 -0.1 -0.01 -0.1 IC[mA], COLLECTOR CURRENT -1 -10 -100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -100 100 f = 100KHz IE = 0 VCE = -5V Cob[pF], CAPACITANCE IC[mA], COLLECTOR CURRENT V CE(sat) IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain -10 -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE 10 1 0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT V BE(sat) Figure 4. Output Capacitance 1000 VCE = -5V 100 10 1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5086/5087 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1