APT10045B2FLL APT10045LFLL 1000V 23A 0.450W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID B2FLL T-MAX™ TO-264 LFLL D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT10045 UNIT 1000 Volts Drain-Source Voltage 23 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 570 Watts Linear Derating Factor 4.56 W/°C VGSM PD TJ,TSTG 92 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts °C 300 23 (Repetitive and Non-Repetitive) 1 Amps 50 mJ 4 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1000 Volts 23 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.450 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7039 Rev A 6-2001 Symbol APT10045 B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 4335 Coss Output Capacitance VDS = 25V 720 Crss Reverse Transfer Capacitance f = 1 MHz 129 VGS = 10V 159 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 19 101 VGS = 15V 10 VDD = 0.5 VDSS 7 ID = ID [Cont.] @ 25°C 32 RG = 0.6W 8 Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dv/dt MAX 23 Continuous Source Current (Body Diode) ISM dt MIN 92 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 340 Tj = 125°C 640 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 1.6 Tj = 125°C 4.16 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 11.5 Tj = 125°C 16.4 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX Junction to Case RqJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 9.45mH, R = 25W, Peak I = 23A j G L temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-7039 Rev A 6-2001 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 19.81 (.780) 20.32 (.800) 19.81 (.780) 21.39 (.842) Gate Drain Source Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) UNIT 0.22 RqJC Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 °C/W